HN1B01F
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B01F
Audio Frequency General Purpose Amplifier Applications
Unit: mm
Q1:
High voltage and high current
: VCEO = −50 V, IC = −150 mA (max)
High hFE : hFE = 120 to 400
Excellent hFE linearity
: hFE (IC = −0.1 mA) / hFE (IC = −2 mA) = 0.95 (typ.)
Q2:
High voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
High hFE : hFE = 120 to 400
Excellent hFE linearity
: hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−150
mA
Base current
IB
−50
mA
JEDEC
JEITA
TOSHIBA
Weight: 0.015 g (typ.)
―
―
2-3N1A
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Start of commercial production
1989-02
© 2020-2021
Toshiba Electronic Devices & Storage Corporation
1
2021-06-25
HN1B01F
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
P C*
300
mW
Tj (Note 1)
150
Tj (Note 2)
125
Tstg (Note 1)
−55 to 150
Tstg (Note 2)
−55 to 125
Collector power dissipation
Junction temperature
Storage temperature range
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
*: Total rating
Note 1: For devices with the ordering part number ending in LF(T.
Note 2: For devices with the ordering part number in other than LF(T.
Marking
Equivalent Circuit (Top View)
© 2020-2021
Toshiba Electronic Devices & Storage Corporation
2
2021-06-25
HN1B01F
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −50 V, IE = 0 A
―
―
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0 A
―
―
−0.1
μA
120
―
400
―
DC current gain
hFE (Note)
VCE = −6 V, IC = −2 mA
Collector-emitter saturation voltage
VCE (sat)
IC = −100 mA, IB = −10 mA
―
−0.1
−0.3
V
VCE = −10 V, IC = −1 mA
―
120
―
MHz
VCB = −10 V, IE = 0 A, f = 1 MHz
―
4
―
pF
Min
Typ.
Max
Unit
Transition frequency
fT
Collector output capacitance
Cob
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cut-off current
ICBO
VCB = 60 V, IE = 0 A
―
―
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0 A
―
―
0.1
μA
120
―
400
―
DC current gain
hFE (Note)
VCE = 6 V, IC = 2 mA
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
―
0.1
0.25
V
VCE = 10 V, IC = 1 mA
―
150
―
MHz
VCB = 10 V, IE = 0 A, f = 1 MHz
―
2
―
pF
Transition frequency
fT
Collector output capacitance
Note:
Cob
hFE Classification Y (Y): 120 to 240, GR (G): 200 to 400
(
) Marking symbol
© 2020-2021
Toshiba Electronic Devices & Storage Corporation
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2021-06-25
HN1B01F
Characteristics Curves
Q1 (PNP Transistor)
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2020-2021
Toshiba Electronic Devices & Storage Corporation
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2021-06-25
HN1B01F
Characteristics Curves
Q2 (NPN Transistor)
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2020-2021
Toshiba Electronic Devices & Storage Corporation
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2021-06-25
HN1B01F
Characteristics Curves
(Q1, Q2 Common)
(Note)
Note: Reference only with Tj of 125 ℃.
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2020-2021
Toshiba Electronic Devices & Storage Corporation
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2021-06-25
HN1B01F
RESTRICTIONS ON PRODUCT USE
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Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for
complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to
property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the
Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information,
including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and
conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product
will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited
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applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any
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Toshiba Electronic Devices & Storage Corporation
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