HN1K05FU_07

HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices High Speed Switching Applications Interface Applications Unit: mm • • • High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact package. Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD(Note 1) Tch Tstg Rating 20 10 100 200 150 −55 to 150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA Weight: 6.8 mg ― ― 2-2J1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: TOTAL rating 1 2007-11-01 HN1K05FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance 1 Drain-Source ON resistance 2 Drain-Source ON resistance 3 Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) 1 RDS (ON) 2 RDS (ON) 3 Ciss Crss Coss ton Switching time toff Test Condition VGS = 10 V, VDS = 0 V ID = 100 μA, VGS = 0 V VDS = 20 V, VGS = 0 V VDS = 1.5 V, ID = 0.1 mA VDS = 1.5 V, ID = 10 mA ID = 1 mA, VGS = 1.2 V ID = 10 mA, VGS = 1.5 V ID = 10 mA, VGS = 2.5 V VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V Min ⎯ 20 ⎯ 0.5 35 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 70 15 10 7 12 3.4 12 0.35 0.2 Max 1 ⎯ 1 1 ⎯ 50 40 28 ⎯ ⎯ ⎯ ⎯ μs ⎯ Unit μA V μA V mS Ω Ω Ω pF pF pF Equivalent Circuit (top view) 6 5 4 Marking 6 5 4 Q1 Q2 KK 1 (Q1, Q2 common) 2 3 1 2 3 Switching Time Test Circuit (a) Test circuit ID 1.5 V 0 10 μs VIN IN 50 Ω RL OUT VDD = 1.5 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C (b) VIN VGS 1.5 V 10% 90% 0 VDD (c) VOUT VDS VDS (ON) 90% tr ton toff 10% VDD tf 2 2007-11-01 HN1K05FU (Q1, Q2 common) 100 ID – VDS 2.0 V 1.8 V Common source ID – VDS (low voltage region) 100 Common source Ta = 25°C 2.5 V 2.2 V 1.6 V 60 2.0 V 1.8 V (mA) 1.6 V ID 60 Drain current Drain current ID (mA) 80 80 40 1.4 V 40 1.4 V 1.2 V 20 VGS = 1 V 1.2 V 20 VGS = 1 V 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) 100 Common source VDS = 1.5 V 10 Ta = 100°C ID – VGS 100 Common source Ta = 25°C RDS (ON) – ID Drain-source on resistance RDS (ON) (Ω) (mA) 1.2 V 1.5 V 10 ID 25°C 1 −25°C Drain current VGS = 2.5 V 0.1 0.01 0 0.5 1 1.5 2 2.5 1 0.1 1 10 100 Gate-source voltage VGS (V) Drain current ID (mA) RDS (ON) – Ta 50 Common source 40 1000 ⎪Yfs⎪ – ID Common source VDS = 1.5 V Ta = 25°C Forward transfer admittance ⎪Yfs⎪ (mS) Drain-source on resistance RDS (ON) (Ω) 100 30 20 VGS = 1.5 V, ID = 10 mA VGS = 1.2 V, ID = 1 mA 10 10 VGS = 2.5 V, ID = 10 mA 0 −50 0 50 100 150 1 1 10 100 1000 Ambient temperature Ta (°C) Drain current ID (mA) 3 2007-11-01 HN1K05FU (Q1, Q2 common) C – VDS 100 Common source VGS = 0 10000 t – ID Common source VDD = 1.5 V VGS = 0 to 1.5 V Ta = 25°C 1000 toff (pF) Ta = 25°C C Capacitance 10 Ciss Coss Switching time t (ns) f = 1 MHz ton 100 tr tf Crss 0 0.1 1 10 100 10 0.1 1 10 100 Drain-source voltage VDS (V) Drain current ID (mA) PD* – Ta 300 Drain power dissipation PD* (mW) 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) *: TOTAL rating 4 2007-11-01 HN1K05FU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01