HN2E02F

HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Q1 Low Forward Voltage Drop Fast Reverse Recovery Time Low Total Capacitance :VF(3)=0.98V(typ.) :trr=1.6ns(typ.) :CT=0.5pF(typ.) :VCEO=50V :IC=150mA(max.) Unit: mm Q2 High Voltage High Collector Current Good hFE Linearity :hFE(IC=0.1mA)/ hFE(IC=2mA) =0.95 Q1 (Diode) Q2 (Transistor) : : 1SS352 Equivalent 2SC4738 Equivalent 1.Anode 2.Base 3.Collector 4.Emitter 5.NC 6.Cathode Unit V V mA mA A Q1 (Diode) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Symbol VRM VR IFM IO IFSM Rating 85 80 300 100 1 JEDEC JEITA TOSHIBA ― ― 2-3N1D Weight: 0.015g (typ.) Q2 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 60 50 5 150 30 Unit V V V mA mA Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC* Tj Tstg Rating 300 125 −55~125 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *Total rating: Power dissipation per element should not exceed 200mW per element. 1 2007-11-22 HN2E02F Q1 (Diode) Electrical Characteristics (Ta = 25°C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance Reverse recovery time IR (1) IR (2) CT trr Test Circuit ― ― ― ― ― ― ― Test Condition IF = 1mA IF = 10mA IF = 100mA VR = 30V VR = 80V VR = 0, f = 1MHz IF = 10mA (fig.1) Min ― ― ― ― ― ― ― Typ. 0.62 0.75 0.98 ― ― 0.5 1.6 Max ― ― 1.2 0.1 0.5 ― ― μA pF ns V Unit Q2 (Transistor) Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition Frequency Collector Output Capacitance Symbol ICBO IEBO hFE* VCE(sat) fT Cob Test Circuit ― ― ― ― ― ― Test Condition VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 6V, IC = 2mA IC =100mA, IB =10mA VCE = 10V, IC =10mA VCB = 10V, IE = 0,f=1MHz Min ― ― 120 ― 60 ― Typ. ― ― ― 0.1 ― 2.0 Max 100 100 700 0.25 ― ― V MHz pF Unit nA nA * hFE Rank Y(Y) : 120~240, GR(G) : 200~400,BL(L) : 350~700 ( ) Marking Symbol Marking Type Name Equivalent Circuit (Top View) 6 5 4 hFE Rank 6 5 13Y Q2 Q1 11 2 3 Fig. 1 : Reverse Recovery Time (trr) Test Circuit 2 2007-11-22 HN2E02F Q1 3 2007-11-22 HN2E02F Q2 4 2007-11-22 HN2E02F Q1, Q2 Common PC* – Ta (mW) COLLECTOR POWER DISSIPATION PC 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (°C) *:Total Rating 5 2007-11-22 HN2E02F RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-22