HN7G10FE

HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • • Q1 (transistor): 2SC5376F equivalent Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 15 12 5 400 50 Unit V V V mA mA 1. 2. 3. 4. 5. 6. EMITTER BASE DRAIN SOURCE GATE COLLECTOR Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA ― ― 2-2J1A Weight: 0.003 g (typ.) Q1, Q2 Common Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 100 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Type Name hFE Rank Pin Assignment (top view) 6 5 4 78A Q1 Q2 1 2 3 1 2007-11-01 HN7G10FE Q1 (transistor) Electrical Characteristics (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO Test Condition VCB = 15 V, IE = 0 VEB = 5 V, IC = 0 Min ⎯ ⎯ 300 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 15 110 0.87 Max 0.1 0.1 1000 30 250 1.2 mV V Unit μA μA hFE (Note 2) VCE = 2 V, IC = 10 mA VCE (sat) (1) VCE (sat) (2) VBE (sat) IC = 10 mA, IB = 0.5 mA IC = 200 mA, IB = 10 mA IC = 200 mA, IB = 10 mA Note 2: hFE classification A: 300~600, B: 500~1000 Q2 (MOSFET) Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 10 V, VDS = 0 ID = 100 μA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min ⎯ 20 ⎯ 0.7 25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 50 4 11.0 3.3 9.3 0.16 0.19 Max 1 ⎯ 1 1.3 ⎯ 12 ⎯ ⎯ ⎯ ⎯ ⎯ Unit μA V μA V mS Ω pF pF pF μs Switching Time Test Circuit (a) Switching time test circuit 2.5 V IN 50 Ω 0 10 μS VIN RL ID OUT VDD = 3 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C 2.5 V (b) VIN VGS 0 VDD (c) VOUT VDS VDS (ON) ton 90% tr toff tf 90% 10% 10% VDD 2 2007-11-01 HN7G10FE Q1 (Transistor) IC – VCE 1.0 Common emitter Ta = 25°C 0.8 10000 5000 3000 hFE – IC Common emitter VCE = 2 V (A) 5 4 3 2 DC current gain hFE 6 0.6 Collector current IC 1000 500 300 Ta = 100°C 25 −25 0.4 1 0.2 IB = 0.5 mA 0 0 100 50 30 1 2 3 4 5 10 0.1 0.3 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector current IC (mA) VCE (sat) – IC 1000 Common emitter 500 IC/IB = 20 300 50 30 Common emitter IC/IB = 20 Ta = 25°C 10 5 3 VBE (sat) – IC Collector-emitter saturation voltage VCE (sat) (mV) 100 50 30 Ta = 100°C −25 25 Base-emitter saturation voltage VBE (sat) (V) 100 300 1000 10 5 3 1 0.5 0.3 1 0.1 0.3 1 3 10 30 0.1 0.1 0.3 1 3 10 30 100 300 500 Collector current IC (mA) Collector current IC (mA) IC – VBE 1000 500 300 100 Cob – VCB IE = 0 A f = 1 MHz Ta = 25°C VCE = 2 V Collector output capacitance Cob (pF) 1.6 Common emitter 50 30 (mA) Collector current IC 100 50 30 Ta = 100°C 25 −25 10 5 3 10 5 3 1 0.0 0.4 0.8 1.2 1 0.1 0.3 1 3 10 30 100 Base-emitter voltage VBE (V) Collector-base voltage VCB (V) 3 2007-11-01 HN7G10FE Q2 (S-MOS) 4 2007-11-01 HN7G10FE Q2 (S-MOS) 5 2007-11-01 HN7G10FE Q1, Q2 Common P* – Ta 200 (mW) POWER DISSIPATION PC 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (°C) *:Total rating 6 2007-11-01 HN7G10FE RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01