JDV2S07FSTPL3

JDV2S07FS TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07FS VCO for UHF Band Radio Unit: mm • High Capacitance Ratio : C1V/C4V = 2.3 (typ.) • Low Series Resistance : rs = 0.42 Ω (typ.) • This device is suitable for use in a small-size tuner. 0.6±0.05 0.1 Rating Unit 0.07 Reverse voltage VR 10 V Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range A M 0.1±0.05 0.48 +0.02 -0.03 JEDEC ― JEITA ― TOSHIBA 1-1L1A Weight: 0.0006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics 1.0±0.05 0.2 ±0.05 0.1 Symbol 0.8±0.05 ｶｿｰﾄﾞﾏｰｸ Maximum Ratings (Ta = 25°C) Characteristics A Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 µA 10 ⎯ ⎯ V Reverse current IR VR = 10 V ⎯ ⎯ 3 nA C1V VR = 1 V, f = 1 MHz 4.0 4.5 4.9 C4V VR = 4 V, f = 1 MHz 1.85 2.0 2.35 2.0 2.3 ⎯ ⎯ ⎯ 0.42 0.55 Ω Capacitance Capacitance ratio C1V/C4V Series resistance rs ⎯ VR = 1 V, f = 470 MHz pF Note: Signal level when capacitance is measured: Vsig = 500 mVrms Marking D 1 2004-02-09 JDV2S07FS CV – VR IR – VR 10 Ta = 25°C IR (pA) 7 5 Reverse current Capacitance CV (pF) 100 f = 1 MHz 3 2 1 0 2 1 3 4 5 6 Reverse voltage 7 VR 8 9 10 Ta = 80°C 60 1 25 0.1 0.01 0 10 4 8 Reverse voltage (V) 0.2 0.1 2 3 Reverse voltage VR 5 (%) 0.3 δC Series resistance 0.4 3 2 Capacitance change Ratio 0.5 rs (Ω) f = 1 MHz Ta = 25°C 1 (V) 4 f = 470 MHz 0.6 0.5 VR 16 δC – Ta rs – VR 0.7 0 0.3 12 1 (V) 2 6V −1 −2 −3 −20 0 20 Ambient temperature 2 4 0 −4 −40 10 VR = 1 V 40 Ta 60 80 (°C) 2004-02-09 JDV2S07FS RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 2004-02-09