MP4005

MP4005 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4005 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching Industrial Applications Unit: mm • • • • Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) High collector current: IC (DC) = ±4 A (max) High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 100 80 5 4 6 0.4 2.0 PNP −100 −80 −5 −4 −6 −0.4 Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-25A1B Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 −55 to 150 W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-10-27 MP4005 Array Configuration R1 R2 10 6 8 7 3 9 5 2 4 R1 R2 1 R1 ≈ 4.5 kΩ R2 ≈ 300 Ω Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 31.3 °C/W Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time 20 μ s Storage time tstg IB1 IB2 Test Condition VCB = 100 V, IE = 0 A VCE = 80 V, IB = 0 A VEB = 5 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A VCE = 2 V, IC = 3 A IC = 3 A , IB = 6 m A IC = 3 A , IB = 6 m A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 10 Ω Min ― ― 0.5 100 80 2000 1000 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― ― 60 30 0.2 Max 20 20 2.5 ― ― ― ― 1.5 2.0 ― ― ― Unit μA μA mA V V ― Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 ― 1.5 ― μs VCC = 30 V ― 0.6 ― Fall time tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1% 2 2006-10-27 MP4005 Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = −100 V, IE = 0 A VCE = −80 V, IB = 0 A VEB = −5 V, IC = 0 A IC = −1 mA, IE = 0 A IC = −10 mA, IB = 0 A VCE = −2 V, IC = −1 A VCE = −2 V, IC = −3 A IC = −3 A, IB = −6 mA IC = −3 A, IB = −6 mA VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0 A, f = 1 MHz Min ― ― −0.5 −100 −80 2000 1000 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― ― 40 55 0.15 Max −20 −20 −2.5 ― ― ― ― −1.5 −2.0 ― ― ― Unit μA μA mA V V ― Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB2 Input 20 μs IB2 IB1 Output 10 Ω Switching time Storage time tstg ― 0.80 ― μs VCC = −30 V Fall time tf −IB1 = IB2 = 6 mA, duty cycle ≤ 1% ― 0.40 ― Marking MP4005 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 3 2006-10-27 MP4005 (NPN transistor) IC – VCE 6 Common 5 emitter Ta = 25°C 5 1 0.5 6 Common emitter 5 VCE = 2 V IC – VBE (A) Collector current IC 3 Collector current IC 4 (A) 0.3 4 0.23 3 2 IB = 0.2 mA 2 Ta = 100°C 1 25 −55 1 0 1 2 3 4 5 6 7 0 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 20000 10000 VCE = 2 V 2.4 Common emitter VCE – IB VCE (V) 2.0 5 1.6 3 1.2 1 0.8 0.3 0.4 Common emitter Ta = 25°C 0 0.1 0.3 1 3 10 30 100 300 2 4 IC = 6 A DC current gain hFE 5000 3000 Ta = 100°C 25 1000 500 300 0.05 0.1 0.3 −55 0.5 1 3 5 10 Collector current IC (A) Collector-emitter voltage Base current IB (mA) VCE (sat) – IC 10 10 Common emitter 5 3 IC/IB = 500 VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Common emitter 5 3 Ta = −55°C 25 1 100 IC/IB = 500 Collector-emitter saturation voltage VCE (sat) (V) 1 25 0.5 0.3 0.1 Ta = −55°C 100 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 Collector current IC (A) Collector current IC (A) 4 2006-10-27 MP4005 (PNP transistor) IC – VCE −6 Common −5 emitter Ta = 25°C −0.5 −0.4 −1.5 −1.0 −6 −0.7 Common emitter −5 VCE = −2 V IC – VBE (A) (A) Collector current IC −4 −3 Collector current IC −4 −3 −0.3 −2 IB = −0.2 mA −2 Ta = 100°C −1 0 −1 −2 −3 −4 −5 −6 −7 −1 25 −55 0 0 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 20000 −2.4 Common emitter 10000 VCE = −2 V VCE – IB VCE (V) −2.0 DC current gain hFE 5000 3000 Ta = 100°C 25 −55 1000 500 300 −0.05 −0.1 −0.3 −0.5 −1 −3 −5 −10 −1.6 −4 −1.2 −1 −0.8 −0.3 −0.4 −2 −3 −5 IC = −6 A Collector-emitter voltage Common emitter 0 −0.1 Ta = 25°C −0.3 −1 −3 −10 −30 −100 −300 Collector current IC (A) ) Base current IB (mA) VCE (sat) – IC −10 −10 IC/IB = 500 VBE (sat) – IC Common emitter Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) Common emitter −5 −3 −5 −3 Ta = −55°C 25 −1 100 IC/IB = 500 −1 25 −0.5 −0.3 −0.1 Ta = −55°C 100 −0.5 −0.3 −0.1 −0.3 −0.5 −1 −3 −5 −10 −0.3 −0.5 −1 −3 −5 −10 Collector current IC (A) Collector current IC (A) 5 2006-10-27 MP4005 rth – tw 300 Transient thermal resistance rth (°C/W) Curves should be applied in thermal 100 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (1) (4) 30 (3) (2) 10 3 NPN 1 PNP 0.3 0.001 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation Circuit board (4) 4-device operation 0.1 1 10 100 1000 0.01 Pulse width tw (s) Safe Operating Area 10 5 3 10 ms 1 ms 100 μs IC max (pulsed)* −10 −5 −3 Safe Operating Area IC max (pulsed)* 10 ms 1 ms 100 μs (A) (A) Collector current IC VCEO max 1 0.5 0.3 −1 −0.5 −0.3 Collector current IC 0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25°C 0.01 0.5 Curves must be derated linearly with increase in temperature. 1 3 10 −0.1 −0.05 −0.03 *: Single nonrepetitive pulse Ta = 25°C −0.01 −0.5 Curves must be derated linearly with increase in temperature. −1 −3 −10 VCEO max 30 100 300 −30 −100 −300 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 6 2006-10-27 MP4005 ΔTj – PT Junction temperature increase ΔTj (°C) (1) 120 (2) (3) (4) PT – Ta (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board (4) (3) (2) 2 (1) Circuit board 80 Total power dissipation PT (W) Circuit board Attached on a circuit board (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 1 2 3 4 5 6 4 40 0 0 0 0 40 80 120 160 200 Total power dissipation PT (W) Ambient temperature Ta (°C) Switching 30 IB1 = −IB2 = −6mA Duty cycle ≤ 1% Input 20 μs IB1 (NPN) 30 Output RL −IB1 = IB2 = 6mA Duty cycle ≤ 1% IB2 IB1 10 Switching IB2 Input (PNP) Output RL Switching time (μs) IB1 IB2 VCC = 30 V Switching time (μs) 10 IB2 IB1 3 tstg 1 3 tstg 20 μs VCC = −30 V 1 0.3 tf ton 0.3 1 3 10 30 100 0.3 tf ton 0.1 0.1 ) 0.1 −0.1 −0.3 −1 −3 −10 −30 −100 Collector current IC (A) Collector current IC (A) 7 2006-10-27 MP4005 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2006-10-27