MP4006

MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications Unit: mm · · · Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : IC (DC) = ±2 A (max) High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 80 80 8 2 3 0.5 2.0 PNP −80 −80 −8 −2 −3 −0.5 Unit V V V JEDEC A A W ― ― 2-25A1B JEITA TOSHIBA Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 −55 to 150 W °C °C Array Configuration R1 R2 10 6 8 7 3 9 5 2 4 R1 R2 1 R1 ≈ 4 kΩ R2 ≈ 800 Ω 1 2002-11-20 MP4006 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 31.3 °C/W Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Saturation voltage Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton Input Switching time 20 µs Storage time tstg IB1 IB2 Test Condition VCB = 80 V, IE = 0 A VCE = 80 V, IB = 0 A VEB = 8 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 30 Ω Min ― ― 0.8 80 80 2000 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― 100 20 0.4 Max 10 10 4.0 ― ― ― 1.5 2.0 ― ― ― Unit µA µA mA V V ― V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 ― 4.0 ― µs VCC = 30 V ― 0.6 ― Fall time tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1% 2 2002-11-20 MP4006 Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Saturation voltage Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = −80 V, IE = 0 A VCE = −80 V, IB = 0 A VEB = −8 V, IC = 0 A IC = −1 mA, IE = 0 A IC = −10 mA, IB = 0 A VCE = −2 V, IC = −1 A IC = −1 A, IB = −1 mA IC = −1 A, IB = −1 mA VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0 A, f = 1 MHz Min ― ― −0.8 −80 −80 2000 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― 50 30 0.4 Max −10 −10 −4.0 ― ― ― −1.5 −2.0 ― ― ― Unit µA µA mA V V ― V MHz pF Transition frequency Collector output capacitance Turn-on time IB2 Input 20 µs IB2 IB1 Output 30 Ω Switching time Storage time tstg ― 2.0 ― µs VCC = −30 V Fall time tf −IB1 = IB2 = 1 mA, duty cycle ≤ 1% ― 0.4 ― 3 2002-11-20 MP4006 (NPN transistor) IC – VCE 3.2 2 0.5 0.3 Common emitter Ta = 25°C 3.2 Common emitter VCE = 2 V IC – VBE (A) (A) 0.21 0.2 2.4 0.23 2.4 IC Collector current Collector current IC 1.6 1.6 0.8 IB = 0.19 mA 0.8 Ta = 100°C 25 −55 0 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 3.2 4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 10000 Common emitter 5000 VCE = 2 V 2.4 VCE – IB Common emitter 2.0 Ta = 25°C hFE VCE Ta = 100°C 3000 −55 (V) DC current gain Collector-emitter voltage 25 1.6 2.0 1.2 0.5 0.8 0.1 1.5 1 2.5 IC = 3 A 1000 500 300 0.4 ) 0 0.1 100 0.03 0.05 0.1 0.3 0.5 1 3 5 10 Collector current IC (A) 1 10 100 500 Base current IB (mA) VCE (sat) – IC 5 VBE (sat) – IC 5 Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) 3 Common emitter IC/IB = 500 3 Ta = −55°C 25 1 100 1 Ta = −55°C 25 0.5 100 0.5 0.3 0.3 0.5 1 3 0.3 0.1 Common emitter IC/IB = 500 0.3 0.5 1 3 Collector current IC (A) Collector current IC (A) 4 2002-11-20 MP4006 (PNP transistor) IC – VCE −3.2 −1 −0.4 Common emitter Ta = 25°C −3.2 Common emitter VCE = −2 V IC – VBE (A) (A) Collector current IC −2.4 −0.3 −2.4 IC Collector current −0.25 −1.6 −0.2 −0.8 −1.6 IB = −0.17 mA −0.8 Ta = 100°C 25 −55 0 0 0 −2 −4 −6 −8 −10 0 0 −0.8 −1.6 −2.4 −3.2 −4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 10000 Common emitter 5000 V CE = −2 V −2.4 VCE – IB Common emitter −2.0 Ta = 25°C hFE Ta = 100°C 25 1000 −55 500 300 VCE 3000 (V) DC current gain −1.6 Collector-emitter voltage −2.0 −2.5 IC = −3 A −1.5 −1.0 −1.2 −0.8 −0.1 −0.4 −0.5 ) 0 −0.1 100 −0.03 −0.1 −0.3 −0.5 −1 −3 −5 −10 Collector current IC (A) −1 −10 −100 −500 Base current IB (mA) VCE (sat) – IC −5 VBE (sat) – IC −5 Collector-emitter saturation voltage VCE (sat) (V) −3 Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 500 −3 Ta = −55°C 25 −1 100 −1 Ta = −55°C 25 −0.5 100 −0.5 −0.3 −0.1 −0.3 −0.5 −1 −3 −0.3 −0.1 Common emitter IC/IB = 500 −0.3 −0.5 −1 −3 Collector current IC (A) Collector current IC (A) 5 2002-11-20 MP4006 rth – tw Curves should be applied in thermal 100 (4) Transient thermal resistance rth (°C/W) 30 limited area (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. (1) (3) (2) 10 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation 0.01 0.1 1 10 100 1000 3 NPN PNP 1 0.5 0.001 Pulse width tw (s) Safe Operating Area (NPN Tr) 5 8 IC max (pulsed)* 10 ms* 1 0.5 0.3 100 µs* PT – Ta (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (°C/W) 3 (W) rth Transient thermal resistance Total power dissipation 1 ms* PT 6 4 (4) (3) (2) Circuit board 0.1 0.05 0.03 1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 3 5 10 30 50 2 (1) VCEO max 100 300 0 0 40 80 120 160 200 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) Safe Operating Area (NPN Tr) −5 160 ∆Tj – PT (°C) (°C/W) I max (pulsed)* −3 C 10 ms* −1 −0.5 −0.3 100 µs* Junction temperature increase ∆Tj (1) 120 (2) (3) (4) rth Transient thermal resistance 1 ms* 80 Circuit board Attached on a circuit board 40 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 1 2 3 4 5 −0.1 −0.05 −0.03 −1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −3 −5 −10 −30 −50 VCEO max −100 −300 0 0 Collector-emitter voltage VCE (V) Total power dissipation PT (W) 6 2002-11-20 MP4006 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-11-20