MP4006
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4006
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
Industrial Applications Unit: mm
· · ·
Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : IC (DC) = ±2 A (max) High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 80 80 8 2 3 0.5 2.0 PNP −80 −80 −8 −2 −3 −0.5 Unit V V V
JEDEC
A A W
― ― 2-25A1B
JEITA TOSHIBA
Weight: 2.1 g (typ.)
PT Tj Tstg
4.0 150 −55 to 150
W °C °C
Array Configuration
R1 R2 10
6
8
7 3
9 5
2
4
R1 R2
1
R1 ≈ 4 kΩ R2 ≈ 800 Ω
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MP4006
Thermal Characteristics
Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit
ΣRth (j-a)
31.3
°C/W
Electrical Characteristics (Ta = 25°C) (NPN transistor)
Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Saturation voltage Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton Input Switching time 20 µs Storage time tstg IB1 IB2 Test Condition VCB = 80 V, IE = 0 A VCE = 80 V, IB = 0 A VEB = 8 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 30 Ω Min ― ― 0.8 80 80 2000 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― 100 20 0.4 Max 10 10 4.0 ― ― ― 1.5 2.0 ― ― ― Unit µA µA mA V V ― V MHz pF
Transition frequency Collector output capacitance Turn-on time
IB1 IB2
―
4.0
―
µs
VCC = 30 V ― 0.6 ―
Fall time
tf IB1 = −IB2 = 1 mA, duty cycle ≤ 1%
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MP4006
Electrical Characteristics (Ta = 25°C) (PNP transistor)
Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Saturation voltage Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = −80 V, IE = 0 A VCE = −80 V, IB = 0 A VEB = −8 V, IC = 0 A IC = −1 mA, IE = 0 A IC = −10 mA, IB = 0 A VCE = −2 V, IC = −1 A IC = −1 A, IB = −1 mA IC = −1 A, IB = −1 mA VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0 A, f = 1 MHz Min ― ― −0.8 −80 −80 2000 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― 50 30 0.4 Max −10 −10 −4.0 ― ― ― −1.5 −2.0 ― ― ― Unit µA µA mA V V ― V MHz pF
Transition frequency Collector output capacitance Turn-on time
IB2
Input 20 µs
IB2 IB1
Output 30 Ω
Switching time
Storage time
tstg
―
2.0
―
µs
VCC = −30 V Fall time tf −IB1 = IB2 = 1 mA, duty cycle ≤ 1% ― 0.4 ―
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MP4006
(NPN transistor)
IC – VCE
3.2 2 0.5 0.3 Common emitter Ta = 25°C 3.2 Common emitter VCE = 2 V
IC – VBE
(A)
(A)
0.21 0.2
2.4 0.23
2.4
IC
Collector current
Collector current
IC
1.6
1.6
0.8
IB = 0.19 mA
0.8
Ta = 100°C
25
−55
0 0
0 2 4 6 8 10
0 0
0.8
1.6
2.4
3.2
4.0
Collector-emitter voltage
VCE
(V)
Base-emitter voltage VBE
(V)
hFE – IC
10000 Common emitter 5000 VCE = 2 V 2.4
VCE – IB
Common emitter 2.0 Ta = 25°C
hFE
VCE
Ta = 100°C
3000 −55
(V)
DC current gain
Collector-emitter voltage
25
1.6 2.0 1.2 0.5 0.8 0.1 1.5 1
2.5
IC = 3 A
1000 500 300
0.4
)
0 0.1
100 0.03 0.05
0.1
0.3 0.5
1
3
5
10
Collector current
IC
(A)
1
10
100
500
Base current
IB
(mA)
VCE (sat) – IC
5
VBE (sat) – IC
5
Collector-emitter saturation voltage VCE (sat) (V)
Base-emitter saturation voltage VBE (sat) (V)
3
Common emitter IC/IB = 500
3 Ta = −55°C 25 1 100
1
Ta = −55°C 25
0.5
100
0.5
0.3
0.3
0.5
1
3
0.3 0.1
Common emitter IC/IB = 500 0.3 0.5 1 3
Collector current
IC
(A)
Collector current
IC
(A)
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MP4006
(PNP transistor)
IC – VCE
−3.2 −1 −0.4 Common emitter Ta = 25°C −3.2 Common emitter VCE = −2 V
IC – VBE
(A)
(A) Collector current IC
−2.4
−0.3
−2.4
IC
Collector current
−0.25 −1.6 −0.2 −0.8
−1.6
IB = −0.17 mA
−0.8
Ta = 100°C
25
−55
0 0
0 −2 −4 −6 −8 −10
0 0
−0.8
−1.6
−2.4
−3.2
−4.0
Collector-emitter voltage
VCE
(V)
Base-emitter voltage VBE
(V)
hFE – IC
10000 Common emitter 5000 V CE = −2 V −2.4
VCE – IB
Common emitter −2.0 Ta = 25°C
hFE
Ta = 100°C 25 1000 −55 500 300
VCE
3000
(V)
DC current gain
−1.6
Collector-emitter voltage
−2.0 −2.5 IC = −3 A −1.5 −1.0
−1.2
−0.8 −0.1 −0.4 −0.5
)
0 −0.1
100 −0.03
−0.1
−0.3 −0.5
−1
−3
−5
−10
Collector current
IC
(A)
−1
−10
−100
−500
Base current
IB
(mA)
VCE (sat) – IC
−5
VBE (sat) – IC
−5
Collector-emitter saturation voltage VCE (sat) (V)
−3
Base-emitter saturation voltage VBE (sat) (V)
Common emitter IC/IB = 500
−3 Ta = −55°C 25 −1 100
−1
Ta = −55°C 25
−0.5
100
−0.5
−0.3 −0.1
−0.3
−0.5
−1
−3
−0.3 −0.1
Common emitter IC/IB = 500 −0.3 −0.5 −1 −3
Collector current
IC
(A)
Collector current
IC
(A)
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MP4006
rth – tw
Curves should be applied in thermal 100 (4)
Transient thermal resistance rth (°C/W)
30
limited area (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width.
(1)
(3) (2)
10 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation 0.01 0.1 1 10 100 1000
3
NPN PNP
1 0.5 0.001
Pulse width
tw
(s)
Safe Operating Area (NPN Tr)
5 8 IC max (pulsed)* 10 ms* 1 0.5 0.3 100 µs*
PT – Ta
(1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board
(°C/W)
3
(W)
rth
Transient thermal resistance
Total power dissipation
1 ms*
PT
6
4
(4) (3) (2) Circuit board
0.1 0.05 0.03 1
*: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 3 5 10 30 50
2 (1)
VCEO max 100 300
0 0
40
80
120
160
200
Collector-emitter voltage VCE
(V)
Ambient temperature Ta (°C)
Safe Operating Area (NPN Tr)
−5 160
∆Tj – PT
(°C)
(°C/W)
I max (pulsed)* −3 C 10 ms* −1 −0.5 −0.3 100 µs*
Junction temperature increase ∆Tj
(1) 120
(2)
(3)
(4)
rth
Transient thermal resistance
1 ms*
80 Circuit board Attached on a circuit board 40 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 1 2 3 4 5
−0.1 −0.05 −0.03 −1
*: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −3 −5 −10 −30 −50
VCEO max −100 −300
0 0
Collector-emitter voltage VCE
(V)
Total power dissipation
PT
(W)
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MP4006
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.
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