MP4304

MP4304 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four High Gain Power Transistors inOne) MP4304 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching Industrial Applications Unit: mm • • • • Small package by full molding (SIP 12 pin) High collector power dissipation (4-device operation) : PT = 4.4 W (Ta = 25°C) High collector current: IC (DC) = 3 A (max) High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 80 7 3 5 0.5 2.2 Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-32C1B Weight: 3.9 g (typ.) PT Tj Tstg 4.4 150 −55 to 150 W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Array Configuration 2 3 4 9 10 11 1 6 5 8 12 7 1 2006-10-27 MP4304 Marking MP4304 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 28.4 °C/W Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time Storage time tstg IB1 20 μ s Test Condition VCB = 80 V, IE = 0 A VEB = 7 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A VCE = 2 V, IC = 2 A IC = 1.5 A, IB = 15 mA IC = 1.5 A, IB = 15 mA VCE = 2 V, IC = 0.1 A VCB = 10 V, IE = 0 A, f = 1 MHz Min ― ― 80 80 600 150 ― ― ― ― ― Typ. ― ― ― ― ― ― 0.25 ― 85 50 0.4 Max 10 10 ― ― ― ― 0.5 1.2 ― ― ― Unit μA μA V V ― Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 Output 20 Ω ― 2.6 ― μs Fall time tf IB1 = −IB2 = 15 mA, duty cycle ≤ 1% IB2 VCC = 30 V ― 1.3 ― Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Maximum forward current Reverse current Reverse voltage Forward voltage Symbol IFM IR VR VF V R = 80 V IR = 100 μA IF = 1 A Test Condition ― Min ― ― 80 ― Typ. ― ― ― ― Max 3 0.4 ― 1.5 Unit A μA V V 2 2006-10-27 MP4304 IC – VCE 3 20 2.5 10 5 Common emitter 2.8 Ta = 25°C 2 3.2 Common emitter VCE = 1 V IC – VBE (A) (A) Collector current IC 2.4 2.0 1.6 Ta = 100°C 1.2 0.8 0.4 0 0 25 −55 Collector current IC 2 1.5 1 1 IB = 0.5 mA 0.5 0 0 1 2 3 4 5 6 7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 3000 0.5 100 VCE – IB Common emitter VCE (V) Ta = 25°C 0.4 DC current gain hFE 1000 25 Ta = −55°C Collector-emitter voltage 0.3 IC = 3 A 0.2 2 0.1 1 0.5 0.1 0 0.3 1 3 10 30 100 300 1000 300 100 Common emitter VCE = 1 V 30 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Base current IB (mA) VCE (sat) – IC 3 VBE (sat) – IC 10 Collector-emitter saturation voltage VCE (sat) (V) Common emitter Base-emitter saturation voltage VBE (sat) (V) 1 0.5 0.3 IC/IB = 100 Common emitter 5 3 IC/IB = 100 1 0.5 0.3 Ta = −55°C 25 100 0.1 0.05 0.03 0.01 0.03 Ta = 100°C −55 0.1 25 0.3 0.5 1 3 5 0.1 0.01 0.03 0.1 0.3 0.5 1 3 5 Collector current IC (A) Collector current IC (A) 3 2006-10-27 MP4304 rth – tw Transient thermal resistance rth (°C/W) Curves should be applied in thermal limited area. The figure shows thermal resistance per device versus pulse width. These curves are obtained by using single nonrepetitive pulse under the condition of devices attached on a circuit board with no heat sink. (1) 1 device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation (3) (4) 100 (1) (2) 10 1 Circuit board 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 30 8 PT – Ta Attached on a circuit board (1) 1device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation (4) 4 (3) (2) 2 (1) Circuit board PT (W) IC max (pulsed)* 1 ms* 10 ms* 100 μs* 6 10 5 Collector current IC (A) 3 Total power dissipation 1 0 0 40 80 120 160 200 Ambient temperature Ta (°C) 0.5 0.3 *: Single nonrepetitive pulse Ta = 25°C 0.1 Curves must be derated linearly with increase in temperature. 10 30 50 100 200 ΔTj – PT VCEO max 160 Collector-emitter voltage VCE (V) ΔTj (°C) 0.05 5 (1) 120 (2) (3) (4) Channel temperature increase 80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 2 4 6 8 10 0 0 Total power dissipation PT (W) 4 2006-10-27 MP4304 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-10-27