MP4507_07

MP4507 TOSHIBA Power Transistor Module Silicon Triple Diffused Type (Four Darlington Power Transistors inOne) MP4507 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • • • • Package with heat sink isolated to lead (SIP 12 pins) High collector power dissipation (4-device operation) : PT = 5 W (Ta = 25°C) High collector current: IC (DC) = ±5 A (max) High DC current gain: hFE = 1000 (min) (VCE = ±3 V, IC = ±3 A) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Isolation voltage Junction temperature Storage temperature range Ta = 25°C PC Tc = 25°C VIsol Tj Tstg 25 1000 150 −55 to 150 V °C °C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 100 100 5 5 8 0.1 3.0 5.0 W PNP −100 −100 −5 −5 −8 −0.1 Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-32B1C Weight: 6.0 g (typ.) Array Configuration R3 R4 7 8 9 2 1 11 4 12 5 R1 R2 6 R1 ≈ 5 kΩ R3 ≈ 5 kΩ R2 ≈ 200 Ω R4 ≈ 120 Ω 1 2004-07-01 MP4507 Marking MP4507 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance fromchannel to ambient (4 devices operation, Ta = 25°C) Thermal resistance from channel to case (4 devices operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C ΣRth (j-c) 5.0 °C/W Symbol Max Unit ΣRth (j-a) 25 °C/W Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time 20 μ s Storage time tstg IB1 IB2 Test Condition VCB = 100 V, IE = 0 A VCE = 100 V, IB = 0 A VEB = 5 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 30 mA, IB = 0 A VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A IC = 3 A, IB = 12 mA IC = 3 A, IB = 12 mA VCE = 3 V, IC = 0.5 A VCB = 50 V, IE = 0 A, f = 1 MHz Output 10 Ω Min ― ― 0.3 100 100 1000 1000 ― ― 3 ― ― Typ. ― ― ― ― ― ― ― ― ― ― 40 0.5 Max 10 10 2.0 ― ― ― ― 2.0 2.5 ― ― ― Unit μA μA mA V V ― Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 ― 3.0 ― μs VCC = 30 V ― 2.0 ― Fall time tf IB1 = −IB2 = 12 mA, duty cycle ≤ 1% 2 2004-07-01 MP4507 Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A , IB = 0 A IF = 5 A, VBE = −3 V, dIF/dt = −50 A/μs Test Condition ― Min ― ― ― ― ― Typ. ― ― ― 1.0 8 Max 5 8 2.0 ― ― Unit A A V μs μC Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = −100 V, IE = 0 A VCE = −100 V, IB = 0 A VEB = −5 V, IC = 0 A IC = −1 mA, IE = 0 A IC = −30 mA, IB = 0 A VCE = −3 V, IC = −0.5 A VCE = −3 V, IC = −3 A IC = −3 A, IB = −12 mA IC = −3 A, IB = −12 mA VCE = −3 V, IC = −0.5 A VCB = −50 V, IE = 0 A, f = 1 MHz Min ― ― −0.3 −100 −100 1000 1000 ― ― 3 ― Typ. ― ― ― ― ― ― ― ― ― ― 40 Max −10 −10 −2.0 ― ― ― ― −2.0 −2.5 ― ― Unit μA μA mA V V ― Saturation voltage V MHz pF Transition frequency Collector output capacitance IB2 Turn-on time ― IB2 IB1 Output 10 Ω 0.5 ― Input 20 μs Switching time Storage time tstg ― 3.0 ― μs VCC = −30 V Fall time tf −IB1 = IB2 = 12 mA, duty cycle ≤ 1% ― 2.0 ― Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A , IB = 0 A IF = 5 A, VBE = 3 V, dIF/dt = −50 A/μs Test Condition ― Min ― ― ― ― ― Typ. ― ― ― 1.0 8 Max 5 8 2.0 ― ― Unit A A V μs μC 3 2004-07-01 MP4507 (NPN transistor) IC – VCE 8 8 5.0 3.0 2.0 1.5 6 1.0 0.7 4 0.5 IB = 0.3 mA 2 Common emitter Tc = 25°C Common emitter VCE = 3 V IC – VBE (A) (A) 6 Collector current IC Collector current IC 4 2 Tc = 100°C 25 −55 0 0 0 2 4 6 8 10 0 0 0.8 1.6 2.4 3.2 4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 30000 Common emitter VCE = 3 V 2.4 VCE – IB Common emitter 2.0 Tc = 25°C DC current gain hFE 10000 5000 3000 25 1000 500 300 0.05 0.1 0.3 1 3 10 20 −55 Tc = 100°C VCE (V) 1.6 3 1 0.8 0.1 5 Collector-emitter voltage IC = 8 A 1.2 0.4 ) 0 0.1 Collector current IC (A) 0.3 1 3 10 30 100 300 Base current IB (mA) VCE (sat) – IC 10 10 Common emitter 5 3 IC/IB = 250 VBE (sat) – IC Common emitter Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) 5 3 Tc = −55°C 25 100 IC/IB = 250 1 25 0.5 0.3 0.1 Tc = −55°C 1 100 0.5 0.3 0.1 0.3 1 3 10 0.3 1 3 10 Collector current IC (A) Collector current IC (A) 4 2004-07-01 MP4507 (PNP transistor) IC – VCE −8 −100 −30 Common −15 emitter Tc = 25°C −8 Common emitter VCE = −3 V IC – VBE (A) −7 −6 −3 −4 −1 −2 IB = −0.3 mA (A) Collector current IC −6 −4 −2 Collector current IC Tc = 100°C 25 −55 0 0 0 −2 −4 −6 −8 −10 0 0 −0.8 −1.6 −2.4 −3.2 −4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 10000 5000 Tc = 100°C 25 Common emitter VCE = −3 V −2.8 VCE – IB Common emitter Tc = 25°C DC current gain hFE 3000 VCE (V) −2.4 1000 500 300 Collector-emitter voltage −55 −2.0 −8 −7 −6 −5 −4 −3 −2 −1 IC = −0.1 A −1.6 −1.2 100 50 −0.05 −0.1 −0.8 −0.3 −1 −3 −10 −30 Collector current IC (A) −0.4 −0.1 −0.3 −1 −3 −10 −30 −100 −300 −500 Base current IB (mA) VCE (sat) – IC −10 −10 Common emitter −5 −3 IC/IB = 250 Common emitter VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −5 −3 IC/IB = 250 Tc = −55°C 25 100 −1 Tc = −55°C −1 −0.5 −0.3 −0.1 100 25 −0.5 −0.3 −0.1 −0.3 −1 −3 −10 −0.3 −1 −3 −10 Collector current IC (A) Collector current IC (A) 5 2004-07-01 MP4507 rth – tw 300 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) Transient thermal resistance rth (°C/W) 100 30 (3) 10 (2) (1) 3 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation 0.3 (3) 3-device operation (4) 4-device operation 0.01 0.1 1 10 100 1000 Circuit board 1 0.1 0.001 Pulse width tw (s) Safe Operating Area (NPN Tr) 30 −30 Safe Operating Area (PNP Tr) 10 IC max (pulsed)* 100 μs* 5 1 ms* −10 IC max (pulsed)* 100 μs* −5 (A) 3 (A) 10 ms* −3 10 ms* 1 ms* Collector current IC 1 0.5 0.3 *: Single nonrepetitive pulse 0.1 Tc = 25°C Collector current IC −1 −0.5 −0.3 *: Single nonrepetitive pulse −0.1 Tc = 25°C Curves must be derated −0.05 linearly with increase in temperature. −0.03 −1 −3 −10 Curves must be derated 0.05 linearly with increase in temperature. 0.03 1 3 10 VCEO max 30 100 300 VCEO max −30 −100 −300 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) PT – Ta 8 ΔTj – PT 160 Junction temperature increase ΔTj (°C) PT (W) 6 (4) (3) 4 (2) (1) 2 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board (1) 120 (2) (3) (4) Total power dissipation Circuit board 80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation 0 0 (4) 4-device operation 2 4 6 8 10 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Total power dissipation PT (W) 6 2004-07-01 MP4507 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2004-07-01