MT3S106FS

MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application 0 .15±0.05 0.35±0.0 5 1.0±0.0 5 0.8±0.0 5 Unit:mm FEATURES • • Low Noise Figure :NF=1.2dB (@f=2GHz) 0.6 ±0.05 High Gain:|S21e|2=10dB (@f=2GHz) 1 3 2 0.1±0.05 Marking 0.1±0.05 3 1 0 .48 41 2 +0 .02 - 0.04 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 13 6 1 80 20 100 150 −55~150 Unit V V V mA mA mW °C °C 0.1±0.05 1 .BASE 2.EMITTER 3.COLLECTOR fSM JEDEC JEITA TOSHIBA Weight: 0.0006 g 2-1E1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Note 1: Device mounted on a glass-epoxy PCB(1.0 cm x 1.0 mm (t)) 1 2007-11-01 0 .2±0.05 MT3S106FS Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Noise Figure Symbol fT |S21e| (1) |S21e| (2) NF 2 2 Test Condition VCE=1V, IC=10mA VCE=1V, IC=10mA, f=2GHz VCE=3V, IC=20mA, f=2GHz VCE=1V, IC=10mA, f=2GHz Min 6.5 8.5 - Typ. 8.5 8 10 1.2 Max 2 Unit GHz dB dB dB Electrical Characteristics (Ta = 25°C) Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transistor Capacitance Symbol ICBO IEBO hFE Cre Test Condition VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, IC=5mA VCB=1V, IE=0, f=1MHz (Note ) Min 110 Typ. 0.5 Max 0.1 0.5 160 0.7 Unit µA µA pF Note : Caution: Cre is measured by 3 terminal method with capacitance Bridge. This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle. 2 2007-11-01 MT3S106FS IC - VCE 50 40 IB= hFE - IC 1000 Common emitter Ta=25°C Collector-current IC(mA) Common emitter VCE=1V Ta=25°C 30 20 10 0 0 1 2 3 4 300μA 250μA 200μA 150μA 100μA 50μA DC current gain hFE 100 10 5 1 10 100 Collector-emitter voltage VCE(V) IC – VBE 100 Collector-current IC(mA) |S21e|2- IC 14 f=2GHz Ta=25°C VCE=3V 10 8 6 4 2 0 1 10 100 VCE=1V 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 Base-emitter voltage VBE(V) fT - IC VCE=1V Ta=25°C Insertion gain |S21e|2(dB) Collector-current IC(mA) Common emitter VCE=1V 10 Ta=25°C 12 Collector-current IC(mA) Cre, Cob - VCB Reverse transfer capacitance Cre(pF), Output capacitance Cob(pF) 1.5 16 Transition frequency fT(GHz) 14 12 10 8 6 4 2 0 1 f=1MHz Ta=25°C 1 Cob Cre 0.5 0 0.1 1 10 10 100 Collector-current IC(mA) Collector-base voltage VCB(V) 3 2007-11-01 MT3S106FS NF, Ga - IC 6 5 PC-Ta 15 Collector power dissipation PC(mW) Associated gain Ga (dB) VCE=1V f=2GHz Ta=25°C Ga 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 Device only The device is mounted on a glass-epoxy printed circuit board (1.0cm2 X 1mm(t)) Noise figure NF(dB) 4 3 2 1 0 1 10 NF 5 10 0 100 Collector-current IC(mA) Ambient temperature Ta(℃) 4 2007-11-01 MT3S106FS RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01