MT8986AL

MT3S35T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.4dB (@f=2GHz) High Gain:|S21e| =13.0dB (@f=2GHz) 2 Marking 3 Q2 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 24 12 100 150 −55~150 Unit V V V mA mA mW °C °C JEITA TOSHIBA Weight:0.0022g (typ.) 1 2002-08-19 MT3S35T Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2) 2 2 Test Condition VCE=3V, IC=10mA, f=2GHz VCE=3V, IC=10mA, f=1GHz VCE=3V, IC=10mA, f=2GHz VCE=3V, IC=2mA, f=1GHz VCE=3V, IC=2mA, f=2GHz Min 16 16 11 - Typ. 20 18 13 1.1 1.4 Max 1.9 Unit GHz dB dB dB dB Noise Figure Electrical Characteristics (Ta = 25°C) Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transistor Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=8V, IE=0 VEB=1V, IC=0 VCE=3V, IC=10mA VCB=1V, IE=0, f=1MHz VCB=1V, IE=0, f=1MHz (Note 1) Min 70 Typ. 0.46 0.21 Max 1 1 140 0.75 0.4 Unit µA µA pF pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 2 2002-08-19 MT3S35T | S21e| -I C INSERTION GAIN |S21e| (dB) VCE=3V 2V 15 1V 2 20 INSERTION GAIN |S21e| ( dB) 15 |S21e| -I C VCE=3V 2V 2 2 2 10 1V 10 5 5 f=1GHz Ta=25 ℃ 1 10 COLLECTOR CURRENT IC (mA) 100 0 0 1 f=2GHz Ta=25 ℃ 10 COLLECTOR CURRENT I C (mA) 100 25 TRANSITION FREQUENCY fT(GHz) fT-I C REVERSE TRANSFER CAPACITANCE Cre(pF) OUTPUT CAPACITANCE Cob(pF) 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 Cre,Cob-V CB IE=0 f=1MHz Ta=25 ℃ Cob 20 15 VCE=3V 2V 1V 10 5 0 1 f=2GHz Ta=25 ℃ 10 COLLECTOR CURRENT I C (mA) 100 Cre 1 10 COLLECTOR-BASE VOLTAGE VCB (V) 4.0 3.5 NOISE FIGURE NF(dB) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 NF,Ga-I C 16 14 12 10 8 6 f=2GHz VCE=3V Ta=25℃ 4 2 ASSOCIATED GAIN Ga(dB) COLLECTOR POWER DISSIPATION PC(mW) 120 100 80 60 40 20 0 0 PC -Ta Ga NF 10 COLLECTOR CURRENT I C(mA) 0 100 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta( ℃) 175 3 2002-08-19 MT3S35T RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-08-19