RN1101MFV

RN1101MFV∼RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101MFV,RN1102MFV,RN1103MFV RN1104MFV,RN1105MFV,RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. 0.8 ± 0.05 1.2 ± 0.05 0.22 ± 0.05 1.2 ± 0.05 Complementary to the RN2101MFV~RN2106MFV Lead (Pb) - free 0.4 0.4 A wide range of resistor values is available for use in various circuits. 1 1 3 2 0.13 ± 0.05 Equivalent Circuit and Bias Resistor Values Type No. RN1101MFV RN1102MFV RN1103MFV RN1104MFV RN1105MFV RN1106MFV R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 0.5 ± 0.05 VESM JEDEC JEITA TOSHIBA 1. BASE 2. EMITTER 3. COLLECTOR ― ― 2-1L1A Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1101MFV~1106MFV RN1101MFV~1106MFV RN1101MFV~1104MFV RN1105MFV, 1106MFV Symbol VCBO VCEO VEBO IC PC(Note) Tj Tstg Rating 50 50 10 5 100 150 150 −55~150 Weight: 0.0015 g (typ.) Unit V V V mA mW °C °C Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 1 2005-03-30 0.32 ± 0.05 0.80 ± 0.05 RN1101MFV∼RN1106MFV Electrical Characteristics (Ta = 25°C) Characteristic Collector cutoff current RN1101MFV~ 1106MFV RN1101MFV RN1102MFV Emitter cutoff current RN1103MFV RN1104MFV RN1105MFV RN1106MFV RN1101MFV RN1102MFV DC current gain RN1103MFV RN1104MFV RN1105MFV RN1106MFV Collector-emitter saturation voltage RN1101MFV~ 1106MFV RN1101MFV RN1102MFV Input voltage (ON) RN1103MFV RN1104MFV RN1105MFV RN1106MFV RN1101MFV~ 1104MFV RN1105MFV, 1106MFV RN1101MFV~ 1106MFV RN1101MFV RN1102MFV Input resistor RN1103MFV RN1104MFV RN1105MFV RN1106MFV RN1101MFV~ 1104MFV Resistor ratio RN1105MFV RN1106MFV R1/R2 ― ― R1 ― ― VCE = 5 V, IC = 0.1 mA VCB = 10 V, IE = 0, f = 1 MHz VI (ON) ― VCE = 0.2 V, IC = 5 mA VCE (sat) ― IC = 5 mA, IB = 0.25 mA hFE ― VCE = 5 V, IC = 10 mA IEBO ― VEB = 10 V, IC = 0 Symbol ICBO ICEO Test Circuit ― Test Condition VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 Min ― ― 0.82 0.38 0.17 0.082 VEB = 5 V, IC = 0 0.078 0.074 30 50 70 80 80 80 ― 1.1 1.2 1.3 1.5 0.6 0.7 1.0 0.5 ― 3.29 7 15.4 32.9 1.54 3.29 0.8 0.0376 Typ. ― ― ― ― ― ― ― ― ― ― ― ― ― ― 0.1 ― ― ― ― ― ― ― ― 0.7 4.7 10 22 47 2.2 4.7 1.0 0.0468 Max 100 500 1.52 0.71 0.33 0.15 0.145 0.138 ― ― ― ― ― ― 0.3 2.0 2.4 3.0 5.0 1.1 1.3 1.5 V 0.8 ― 6.11 13 28.6 61.1 2.86 6.11 1.2 0.0562 kΩ pF V V mA Unit nA Input voltage (OFF) VI (OFF) ― Collector output capacitance Cob ― 0.08 0.1 0.12 2 2005-03-30 RN1101MFV∼RN1106MFV RN1101MFV 100 COLLECTOR CURRENT IC (mA) IC - VI (ON) 100 RN1102MFV IC - VI (ON) Ta = 100°C COLLECTOR CURRENT IC (mA) 10 10 Ta = 100°C 25 1 -25 COMMON EMITTER VCE = 0.2 V 0.1 0.1 1 10 INPUT VOLTAGE VI (ON) (V) 100 25 1 -25 COMMON EMITTER VCE = 0.2 V 0.1 0.1 1 10 100 INPUT VOLTAGE VI (ON) (V) RN1103MFV 100 COLLECTOR CURRENT IC (mA) IC - VI (ON) 100 COLLECTOR CURRENT IC (mA) RN1104MFV IC - VI (ON) 10 Ta = 100°C 25 10 Ta = 100°C 25 1 1 -25 COMMON EMITTER VCE = 0.2 V 0.1 0.1 1 10 100 INPUT VOLTAGE VI (ON) (V) -25 COMMON EMITTER VCE = 0.2 V 0.1 0.1 1 10 100 INPUT VOLTAGE VI (ON) (V) RN1105MFV 100 COLLECTOR CURRENT IC (mA) IC - VI (ON) 100 COLLECTOR CURRENT IC (mA) RN1106MFV Ta = 100°C IC - VI (ON) Ta = 100°C 10 10 25 1 25 1 -25 -25 COMMON EMITTER VCE = 0.2 V COMMON EMITTER VCE = 0.2 V 0.1 0.1 1 10 100 0.1 0.1 1 10 100 INPUT VOLTAGE VI(ON) (V) INPUT VOLTAGE VI (ON) (V) 3 2005-03-30 RN1101MFV∼RN1106MFV RN1101MFV 10000 COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (µA) IC - VI(OFF) 10000 RN1102MFV IC - VI (OFF) COMMON EMITTER VCE = 5 V COMMON EMITTER VCE = 5 V 1000 Ta = 100°C 25 -25 1000 Ta = 100°C 25 -25 100 100 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 INPUT VOLTAGE VI(OFF) (V) 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 INPUT VOLTAGE VI (OFF) (V) RN1103MFV 10000 COLLECTOR CURRENT IC (µA) IC - VI (OFF) 10000 COLLECTOR CURRENT IC (µA) RN1104MFV IC - VI( OFF) COMMON EMITTER VCE = 5 V COMMON EMITTER VCE = 5 V 1000 Ta = 100°C 25 -25 1000 Ta = 100°C 25 -25 100 100 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 INPUT VOLTAGE VI (OFF) (V) 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 INPUT VOLTAGE VI (OFF) (V) RN1105MFV 10000 COLLECTOR CURRENT IC (µA) IC - VI(OFF) 10000 COLLECTOR CURRENT IC (µA) RN1106MFV IC - VI(OFF) COMMON EMITTER VCE = 5 V COMMON EMITTER VCE = 5 V 1000 Ta = 100°C 25 -25 1000 Ta = 100°C 25 -25 100 100 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 INPUT VOLTAGE VI (OFF) (V) 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 INPUT VOLTAGE VI (OFF) (V) 4 2005-03-30 RN1101MFV∼RN1106MFV RN1101MFV 1000 hFE - IC RN1102MFV 1000 hFE - IC DC CURRENT GAIN hFE 100 Ta = 100°C 25 -25 DC CURRENT GAIN hFE Ta = 100°C 100 -25 25 10 COMMON EMITTER VCE = 5 V 1 1 10 COLLECTOR CURRENT IC (mA) 100 COMMON EMITTER VCE = 5 V 10 1 10 COLLECTOR CURRENT IC (mA) 100 RN1103MFV 1000 hFE - IC 1000 RN1104MFV hFE - IC Ta = 100°C DC CURRENT GAIN hFE Ta = 100°C 25 100 -25 DC CURRENT GAIN hFE 25 -25 100 COMMON EMITTER VCE = 5 V 10 1 10 COLLECTOR CURRENT IC (mA) 100 10 1 COMMON EMITTER VCE = 5 V 10 COLLECTOR CURRENT IC (mA) 100 RN1105MFV 1000 Ta = 100°C DC CURRENT GAIN hFE hFE - IC 1000 RN1106MFV hFE - IC Ta = 100°C DC CURRENT GAIN hFE 25 -25 100 25 -25 100 COMMON EMITTER VCE = 5 V 10 1 10 COLLECTOR CURRENT IC (mA) 100 10 1 COMMON EMITTER VCE = 5 V 10 COLLECTOR CURRENT IC (mA) 100 5 2005-03-30 RN1101MFV∼RN1106MFV RN1101MFV VCE (sat) - IC 1 RN1102MFV VCE (sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) COMMON EMITTER IC / IB = 10 COMMON EMITTER IC / IB = 10 Ta = 100°C 25 -25 0.1 Ta = 100°C -25 25 0.01 1 10 COLLECTOR CURRENT 　IC (mA) 100 1 10 COLLECTOR CURRENT 　IC (mA) 100 RN1103MFV VCE (sat) - IC 1 RN1104MFV VCE (sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) COMMON EMITTER IC / IB = 10 COMMON EMITTER IC / IB = 10 Ta = 100°C 0.1 Ta = 100°C -25 25 -25 25 0.01 1 10 COLLECTOR CURRENT 　IC (mA) 100 1 10 COLLECTOR CURRENT 　IC (mA) 100 RN1105MFV VCE (sat) - IC 1 RN1106MFV VCE (sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) ( V) COMMON EMITTER IC / IB = 10 COMMON EMITTER IC / IB = 10 Ta = 100°C 0.1 Ta = 100°C -25 25 -25 25 0.01 1 10 COLLECTOR CURRENT 　IC (mA) 100 1 10 COLLECTOR CURRENT 　IC (mA) 100 6 2005-03-30 RN1101MFV∼RN1106MFV Type Name Marking RN1101MFV XA RN1102MFV XB RN1103MFV XC RN1104MFV XD RN1105MFV XE RN1106MFV XF 7 2005-03-30 RN1101MFV∼RN1106MFV RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 8 2005-03-30