RN1114 to RN1118
Bipolar Transistors
Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)
RN1114/15/16/17/18
1. Applications
•
Switching
•
Inverter Circuits
•
Interfacing
•
Driver Circuits
2. Features
(1)
AEC-Q101 qualified (Please see the orderable part number list)
(2)
The integrated bias resistor reduces the number of external parts required, making it possible to reduce
system size and assembly time.
(3)
Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
(4)
Complementary to RN2114 to RN2118
3. Equivalent Circuit
4. Bias Resistor Values
R1 (kΩ)
R2 (kΩ)
RN1114
1
10
RN1115
2.2
10
RN1116
4.7
10
RN1117
10
4.7
RN1118
47
10
Part No.
Start of commercial production
1994-08
©2021
Toshiba Electronic Devices & Storage Corporation
1
2021-08-30
Rev.1.0
RN1114 to RN1118
5. Packaging and Pin Assignment
1: Base
2: Emitter
3: Collector
SSM
6. Orderable part number
Orderable part number
RN1114
AEC-Q101
RN1114,LF
�
RN1114,LXGF
RN1115
RN1116
RN1117
YES
RN1115,LF
RN1115,LXGF
YES
RN1115,LXHF
YES
RN1116,LF
(Note 1)
YES
RN1116,LXHF
YES
RN1117(TE85L,F)
(Note 1)
YES
YES
Unintended Use
(Note 1)
General Use
(Note 1)
Unintended Use
(Note 1)
Automotive Use
General Use
(Note 1)
�
�
(Note 1)
Automotive Use
�
RN1118(TE85L,F)
Unintended Use
General Use
�
RN1116,LXGF
Note
General Use
�
�
RN1118
Note
Unintended Use
(Note 1)
General Use
(Note 1)
Unintended Use
(Note 1)
Note 1: For more information, please contact our sales or use the inquiry form on our website.
©2021
Toshiba Electronic Devices & Storage Corporation
2
2021-08-30
Rev.1.0
RN1114 to RN1118
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �)
Characteristics
Collector-base voltage
RN1114~RN1118
Collector-emitter voltage
Emitter-base voltage
RN1114
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
VEBO
5
RN1115
RN1116
7
RN1117
15
RN1118
Collector current
25
IC
100
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
�
Storage temperature
Tstg
-55 to 150
Note:
RN1114~RN1118
V
6
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
©2021
Toshiba Electronic Devices & Storage Corporation
3
2021-08-30
Rev.1.0
RN1114 to RN1118
8. Electrical Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
Input voltage (ON)
nA
�
�
100
VCE = 50 V, IB = 0 mA
�
�
500
RN1114
IEBO
VEB = 5 V, IC = 0 mA
0.35
�
0.65
RN1115
VEB = 6 V, IC = 0 mA
0.37
�
0.71
RN1116
VEB = 7 V, IC = 0 mA
0.36
�
0.68
RN1117
VEB = 15 V, IC = 0 mA
0.78
�
1.46
VEB = 25 V, IC = 0 mA
0.33
�
0.63
VCE = 5 V, IC = 10 mA
50
�
�
30
�
�
RN1114�RN1116,
RN1118
hFE
mA
�
RN1114~
RN1118
VCE(sat)
IC = 5 mA, IB = 0.25 mA
�
0.1
0.3
V
RN1114
VI(ON)
VCE = 0.2 V, IC = 5 mA
V
0.6
�
2.0
RN1115
0.7
�
2.5
RN1116
0.8
�
2.5
RN1117
1.5
�
3.5
2.5
�
10.0
0.3
�
0.9
RN1115
0.3
�
1.0
RN1116
0.3
�
1.1
RN1117
0.3
�
2.3
RN1118
0.5
�
5.7
VCE = 10 V, IC = 5 mA
�
250
�
MHz
VCB = 10 V, IE = 0 mA, f = 1
MHz
�
3.0
6.0
pF
kΩ
RN1114
VI(OFF)
RN1114~
RN1118
fT
Collector output capacitance
RN1114~
RN1118
Cob
RN1114
R1
VCE = 5 V, IC = 0.1 mA
0.7
1.0
1.3
RN1115
�
1.54
2.2
2.86
RN1116
3.29
4.7
6.11
RN1117
7.0
10.0
13.0
32.9
47.0
61.1
�
0.1
�
RN1115
�
0.22
�
RN1116
�
0.47
�
RN1117
�
2.13
�
RN1118
�
4.7
�
RN1118
Resistor ratio
Unit
VCB = 50 V, IE = 0 mA
Transition frequency
Input resistance
Max
ICEO
RN1118
Input voltage (OFF)
Typ.
ICBO
RN1117
Collector-emitter saturation
voltage
Min
RN1114~
RN1118
RN1118
DC current gain
Test Condition
RN1114
©2021
Toshiba Electronic Devices & Storage Corporation
R1/R2
�
4
V
�
2021-08-30
Rev.1.0
RN1114 to RN1118
9. Marking
Fig. 9.1
Marking RN1114
Fig. 9.2
Marking RN1115
Fig. 9.3
Marking RN1116
Fig. 9.4
Marking RN1117
Fig. 9.5
Marking RN1118
©2021
Toshiba Electronic Devices & Storage Corporation
5
2021-08-30
Rev.1.0
RN1114 to RN1118
10. Characteristics Curves (Note)
Fig. 10.1
RN1114 I C -V I(ON)
Fig. 10.2
RN1115 I C -V I(ON)
Fig. 10.3
RN1116 I C -V I(ON)
Fig. 10.4
RN1117 I C -V I(ON)
Fig. 10.5
RN1118 I C -V I(ON)
©2021
Toshiba Electronic Devices & Storage Corporation
6
2021-08-30
Rev.1.0
RN1114 to RN1118
Fig. 10.6
RN1114 I C -V I(OFF)
Fig. 10.7
RN1115 I C -V I(OFF)
Fig. 10.8
RN1116 I C -V I(OFF)
Fig. 10.9
RN1117 I C -V I(OFF)
Fig. 10.10
RN1118 I C -V I(OFF)
©2021
Toshiba Electronic Devices & Storage Corporation
7
2021-08-30
Rev.1.0
RN1114 to RN1118
Fig. 10.11
RN1114 h FE -I C
Fig. 10.12
RN1115 h FE -I C
Fig. 10.13
RN1116 h FE -I C
Fig. 10.14
RN1117 h FE -I C
Fig. 10.15
RN1118 h FE -I C
©2021
Toshiba Electronic Devices & Storage Corporation
8
2021-08-30
Rev.1.0
RN1114 to RN1118
Note:
Fig. 10.16
RN1114 V CE(sat) -I C
Fig. 10.17
RN1115 V CE(sat) -I C
Fig. 10.18
RN1116 V CE(sat) -I C
Fig. 10.19
RN1117 V CE(sat) -I C
Fig. 10.20
RN1118 V CE(sat) -I C
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2021
Toshiba Electronic Devices & Storage Corporation
9
2021-08-30
Rev.1.0
RN1114 to RN1118
Package Dimensions
Unit: mm
Weight: 2.4 mg (typ.)
Package Name(s)
TOSHIBA: 2-2H1S
Nickname: SSM
©2021
Toshiba Electronic Devices & Storage Corporation
10
2021-08-30
Rev.1.0
RN1114 to RN1118
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA".
Hardware, software and systems described in this document are collectively referred to as "Product".
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's
written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE").
Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in
nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, and devices related to power plant.
IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.
For details, please contact your TOSHIBA sales representative or contact us via our website.
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OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE,
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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©2021
Toshiba Electronic Devices & Storage Corporation
11
2021-08-30
Rev.1.0