RN1114MFV∼RN1118MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2114MFV to RN2118MFV
0.32 ± 0.05
1
0.4
z Simplify circuit design
0.80 ± 0.05
1
0.4
0.8 ± 0.05
z With built-in bias resistors
1.2 ± 0.05
0.22 ± 0.05
1.2 ± 0.05
3
2
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1114MFV
1
10
RN1115MFV
2.2
10
RN1116MFV
4.7
10
RN1117MFV
10
4.7
RN1118MFV
47
0.13 ± 0.05
0.5 ± 0.05
Unit: mm
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
10
―
JEITA
TOSHIBA
―
2-1L1A
Weight: 1.5 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Rating
Unit
RN1114MFV
VCBO
50
V
to 1118MFV
VCEO
50
V
RN1114MFV
RN1115MFV
Emitter-base voltage
RN1116MFV
Symbol
Collector current
Collector power dissipation
Storage temperature range
VEBO
7
15
RN1118MFV
25
RN1114MFV
Junction temperature
6
RN1117MFV
5
to 111M8FV
Land Pattern Example
0.5mm
V
0.45mm
0.45mm
0.4mm
IC
100
mA
PC (Note 1)
150
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Start of commercial production
2005-09
1
2014-03-01
RN1114MFV∼RN1118MFV
Electrical Characteristics (Ta = 25°C)
Collector cut-off
current
ICBO
to 1118MFV
ICEO
RN1114MFV
RN1115MFV
Emitter cut-off current
Test
Circuit
Symbol
RN1114MFV
Test Condition
―
RN1116MFV
IEBO
―
RN1117MFV
RN1118MFV
DC current gain
RN1114MFV
to 16MFV, 18MFV
Collector-emitter
saturation voltage
RN1114MFV
RN1114MFV
hFE
―
Input voltage (ON)
RN1116MFV
V CE (sat)
―
VI (ON)
―
―
500
VEB = 5V, IC = 0
0.35
―
0.65
VEB = 6V, IC = 0
0.37
―
0.71
VEB = 7V, IC = 0
0.36
―
0.68
VEB = 15V, IC = 0
0.78
―
1.46
VEB = 25V, IC = 0
0.33
VCE = 5V, IC = 10mA
I C= 5mA, I B= 0.25mA
VCE = 0.2V, IC = 5mA
RN1118MFV
Input voltage (OFF)
RN1114MFV
RN1115MFV
RN1116MFV
VI (OFF)
―
VCE = 5V, IC = 0.1mA
RN1117MFV
Transition frequency
RN1114MFV
RN1114MFV
RN1114MFV
Input resistor
to 1118MFV
Collector Output
capacitance
to 1118MFV
Resistor ratio
―
0.1
―
0.7
―
2.5
0.8
―
2.5
1.5
―
4.0
2.5
―
10
0.3
―
0.9
0.3
―
1.0
0.3
―
1.1
0.3
―
2.3
―
Cob
―
VCB = 10V, IE = 0,
f = 1MHz
―
―
250
3
2.86
3.29
4.7
6.11
7
10
13
32.9
47
61.1
―
0.1
―
―
0.22
―
―
0.47
―
RN1117MFV
―
2.13
―
RN1118MFV
―
4.7
―
R1
―
―
RN1114MFV
RN1115MFV
RN1116MFV
R1/R2
―
2
―
V
V
pF
2.2
V
―
1.54
RN1116MFV
―
MHz
1.3
RN1115MFV
―
1.0
mA
5.7
0.7
0.3
2.0
nA
―
―
VCE = 10V, IC = 5mA
―
Unit
0.63
0.6
―
RN1118MFV
―
fT
RN1117MFV
50
―
0.5
RN1118MFV
Max
VCE = 50V, IB = 0
―
100
30
Typ.
―
RN1117MFV
―
to 1118MFV
RN1115MFV
Min
VCB = 50V, IE = 0
RN1117MFV
Characteristic
kΩ
2014-03-01
RN1114MFV∼RN1118MFV
RN1114MFV
100
COLLECTOR CURRENT IC (mA)
コ
レ
25
RN1116MFV
IC - V I(ON)
COLLECTOR CURRENT IC (mA)
RN1117MFV
エミッタ接地
COMMON
EMITTER
CE
= 0.2V
VVCE
= 0.2
V
10
IC - V I(ON)
Ta = 100°C
-25
電
タ
25
コ
レ
1
Ta = 100°C
1
10
( V(V)
)
INPUT
VOLTAGE
VI (ON)
入力オン
電圧 V I(ON)
-25
1
0.1
100
25
0.1
0.1
0.1
流
電
タ
ク
ク
エミッタ接地
COMMON
EMITTER
VV
= 0.2
V
= 0.2V
CECE
)A
m
10
(
IC
流
1
INPUT
VOLTAGE
VI (ON)
( V(V)
)
入力オン
電圧 V I(ON)
100
A
m
10
(
IC
コ
レ
0.1
10
100
)
1
INPUT
VOLTAGE
VI (ON)
( V(V)
)
入力オン
電圧 V I(ON)
-25
25
0.1
Ta = 100°C
1
コ
レ
流
電
タ
ク
1
0.1
-25
Ta = 100°C
0.1
)A
m
10
(
IC
IC - V I(ON)
エミッタ接地
COMMON EMITTER
VCE
V
V
CE==0.20.2V
10
電
流
タ
ク
100
COLLECTOR CURRENT IC (mA)
m
(
IC
RN1115MFV
エミッタ接地
COMMON EMITTER
VVCE
CE==0.2
0.2V
V
) A
IC - V I(ON)
COLLECTOR CURRENT IC (mA)
1
10
100
( V )(V)
INPUT
VOLTAGE
VI (ON)
入力オン
電圧 V I(ON)
RN1118MFV
COMMON EMITTER
エミッタ接地
VCE = 0.2 V
COLLECTOR CURRENT IC (mA)
IC - V I(ON)
100
V CE = 0.2V
)A
m
10
(
IC
流
電
タ
ク
コ
Ta = 100°C
-25
25
1
レ
0.1
1
10
INPUT
VOLTAGE
VI (ON)
( V(V)
)
入力オン
電圧 V I(ON)
100
3
2014-03-01
RN1114MFV∼RN1118MFV
COLLECTOR CURRENT IC (μA)
μ(
IC
10000
10000
A)
IC - V I(OFF)
1000
Ta = 100°C
25
エミッタ接地
COMMON
EMITTER
VCE =V
5 CE
V = 5V
25
Ta = 100°C
-25
100
コ
レ
コ
レ
1000
流
電
タ
ク
100
IC - V I(OFF)
RN1115MFV
エミッタ接地
COMMON
EMITTER
VVCE
5 V5V
CE= =
μ(
IC
-25
電
流
タ
ク
A)
COLLECTOR CURRENT IC (μA)
RN1114MFV
10
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.2
V I(OFF)
( V(V)
)
INPUT
VOLTAGE
VI (OFF)
入力オフ電圧
0.4
0.6
0.8
1
1.2
1.4
V I(OFF)
( V(V)
)
INPUT
VOLTAGE
VI (OFF)
入力オフ電圧
IC - V I(OFF)
RN1116MFV
10000
COLLECTOR CURRENT IC (μA)
A)
μ(
IC
電
流
タ
ク
コ
レ
A)
エミッタ接地
COMMON
EMITTER
CE
VV
= 5=V5V
CE
1000
Ta = 100°C
25
μ(
IC
-25
100
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1000
Ta = 100°C
25
-25
100
RN1118MFV
1.2
1.6
2
2.4
2.8
INPUT
VOLTAGE
V
(OFF)
(V)
I
入力オフ電圧 V I(OFF) ( V )
3.2
IC - V I(OFF)
10000
COLLECTOR CURRENT IC (μA)
A)
μ(
IC
エミッタ接地
COMMON
EMITTER
V CE
VCE
= 5 V= 5V
1000
Ta = 100°C
25
-25
エミッタ接地
COMMON
EMITTER
V
VCE
CE= =5 V5V
0.8
I(OFF)
( V(V)
)
INPUT
VOLTAGEV V
入力オフ電圧
I (OFF)
IC - V I(OFF)
10
0.2
電
流
タ
ク
コ
レ
RN1117MFV
10000
COLLECTOR CURRENT IC (μA)
電
流
タ
ク
100
コ
レ
10
1
2
3
4
5
6
INPUT
VOLTAGEVV
I(OFF)
( V(V)
)
入力オフ電圧
I (OFF)
4
2014-03-01
RN1114MFV∼RN1118MFV
RN1114MFV
E
hF
率
100
Ta = 100°C
-25
電
幅
25
直
流
10
1
10
COLLECTOR
CURRENT
IC (mAIC
) (mA)
コレクタ電流
RN1116MFV
1
hFE - IC
Ta = 100°C
100
E
hF
-25
電
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
RN1117MFV
エミッタ接地
COMMON
EMITTER
VVCE
CE= 5= V5V
幅
率
増
幅
25
電
流
直
流
10
COLLECTOR
CURRENT
IC (mAIC
) (mA)
コレクタ電流
100
hFE - IC
1000
E
hF
増
10
100
1000
率
25
流
直
-25
電
流
Ta = 100°C
100
増
幅
流
エミッタ接地
COMMON
EMITTER
VVCE
CE= 5= V5V
DC CURRENT GAIN hFE
DC CURRENT GAIN hFE
エミッタ接地
COMMON
EMITTER
VVCE
= 5=V5V
CE
E
hF
率
hFE - IC
1000
増
RN1115MFV
1000
hFE - IC
エミッタ接地
COMMON
EMITTER
V
VCE
CE= =5 V5V
100
Ta = 100°C
25
-25
10
流
直
流
10
1
10
COLLECTOR
CURRENT
COLLECTOR
CURRENT
IC
(mA)
IC (mAIC
) (mA)
コレクタ電流
100
1
1
10
COLLECTOR
CURRENT
IC (mA IC
) (mA)
コレクタ電流
100
RN1118MFV
DC CURRENT GAIN hFE
E
hF
率
hFE - IC
1000
増
COMMON
EMITTER
エミッタ接地
VVCE
CE= 5=V5V
100
Ta = 100°C
幅
25
-25
電
流
直
流
10
1
10
COLLECTOR CURRENT
IC (mA)
コレクタ電流 IC (mA )
100
5
2014-03-01
RN1114MFV
1
RN1115MFV
COMMON
EMITTER
エミッタ接地
IIC/IB = 20
C/IB = 10
V CE(s at) - IC
エミッタ接地
COMMON EMITTER
IIC/IB
C/IB= 20
= 10
電圧
飽和
(
V)
間 )t
タ a
ッs
ミ E(
エC
・V
タ
ク
レ
コ
RN1114MFV∼RN1118MFV
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
電圧
V CE(s at) - IC
飽和
V)
(
間 )t
タa
ッs
ミ E(
エC
・V
タ
ク
レ
コ
Ta = 100°C
0.1
25
-25
0.01
10
25
-25
0.01
1
Ta = 100°C
0.1
100
1
10
IC (mAIC
) (mA)
COLLECTOR
CURRENT
コレクタ電流
100
IC (mA
COLLECTOR
CURRENT
IC) (mA)
コレクタ電流
エミッタ接地
COMMON
EMITTER
IIC/IB = 20
C/IB = 10
V CE(s at) - IC
エミッタ接地
COMMON EMITTER
IC/IB
= 20
C/IB
= 10
電圧
電圧
飽和
V)
(
間 )t
タa
ッs
ミ E(
エC
・ V
タ
ク
レ
コ
RN1117MFV
1
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
V CE(s at) - IC
RN1116MFV
飽和
V)
(
間 )t
タa
ッs
ミ E(
エC
・V
タ
ク
レ
コ
Ta = 100°C
0.1
25
-25
0.01
0.1
25
-25
0.01
1
10
100
Ta = 100°C
1
10
100
IC (mA
COLLECTOR
CURRENT
IC) (mA)
コレクタ電流
IC (mAIC
) (mA)
COLLECTOR
CURRENT
コレクタ電流
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
電圧
V)
飽和
(
間 )t
タ
a
ッ s
ミ E(
エC
・V
タ
ク
レ
コ
RN1118MFV
V CE(s at) - IC
1
エミッタ接地
COMMON
EMITTER
ICI/IB
= 20= 10
C/IB
Ta = 100°C
0.1
25
-25
0.01
1
10
COLLECTOR
CURRENT
IC (mAIC
) (mA)
コレクタ電流
100
6
2014-03-01
RN1114MFV∼RN1118MFV
Type Name
RN1114MFV
XQ
RN1115MFV
XS
RN1116MFV
XT
RN1117MFV
XU
Marking
RN1118MFV
XW
7
2014-03-01
RN1114MFV∼RN1118MFV
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or
applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for
such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
8
2014-03-01
