RN1131MFV(TL3,T)

RN1131MFV, RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1131MFV, RN1132MFV Unit: mm Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.  A wide range of resistor values is available for use in various circuits.  Complementary to the RN2131MFV, RN2132MFV Equivalent Circuit 1.BASE 2.EMITTER 3.COLLECTOR VESM JEDEC ― JEITA ― TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Characterisstic Symbol Land Pattern Dimensions (for reference only) Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA PC (Note1) 150 mW Tj 150 °C Tstg −55 to 150 °C Collector current Collector power dissipation Junction temperature Storage temperature range Note: Unit: mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1 : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm) Start of commercial production 2005-04 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-01-07 RN1131MFV, RN1132MFV Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― Emitter cut-off current IEBO ― DC current gain hFE ― VCE = 5 V, IC = 1 mA VCE (sat) ― Cob R1 Characteristic Collector-emitter saturation voltage Collector output capacitance RN1131MFV Input resistor RN1132MFV © 2019 Toshiba Electronic Devices & Storage Corporation Test Condition Min Typ. Max Unit VCB = 50 V, IE = 0 A ― ― 100 nA VEB = 5 V, IC = 0 A ― ― 100 nA 120 ― 700 ― IC = 5 mA, IB = 0.5 mA ― 0.1 0.3 V ― VCB = 10 V, IE = 0 A, f = 1 MHz ― 0.7 ― pF ― ― 70 100 130 140 200 260 2 kΩ 2019-01-07 RN1131MFV, RN1132MFV RN1131MFV IC - VI(ON) COMMON EMITTER VCE = 0.2V COLLECTOR CURRENT　IC (μA) COLLECTOR CURRENT　IC (mA) 10000 10 Ta = 100°C -25 25 1 0.1 1000 -25 25 100 Ta = 100°C COMMON EMITTER VCE = 5V 10 0.1 1 10 100 0 IC - VI(ON) RN1132MFV 1 2 3 4 5 INPUT VOLTAGE 　VI(OFF) ( V) INPUT VOLTAGE　VI(ON) ( V) RN1132MFV 100 IC - VI(OFF) 10000 COMMON EMITTER VCE = 0.2V COLLECTOR CURRENT　IC (μA) COLLECTOR CURRENT　IC 　 (mA) IC - VI(OFF) RN1131MFV 100 10 -25 Ta = 100°C 25 1 0.1 1000 -25 25 Ta = 100°C 100 COMMON EMITTER VCE = 5V 10 0.1 1 10　 100 0 INPUT VOLTAGE 　VI(ON) ( V) 2 4 6 　 8 10 　 INPUT VOLTAGE　VI(OFF) ( V) 　 © 2019 Toshiba Electronic Devices & Storage Corporation 　 3 2019-01-07 RN1131MFV, RN1132MFV hFE - IC RN1131MFV 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) ( V) DC CURRENT GAIN　hFE Ta = 100°C 25 -25 COMMON EMITTER VCE = 5V 10 COMMON EMITTER IC/IB = 10 0.1 Ta = 100°C 25 -25 0.01 0.1 1 10 100 0.1 COLLECTOR CURRENT　IC (mA) hFE - IC RN1132MFV 1 10 100 COLLECTOR CURRENT　IC (mA) RN1132MFV VCE(sat) - IC 1 Ta = 100°C 100 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) ( V) 1000 DC CURRENT GAIN　hFE VCE(sat) - IC RN1131MFV 1 1000 25 -25 COMMON EMITTER VCE = 5V 10 COMMON EMITTER IC/IB = 10 0.1 Ta = 100°C -25 25 0.01 0.1 1 10 100 0.1 COLLECTOR CURRENT　IC (mA) © 2019 Toshiba Electronic Devices & Storage Corporation 1 10 COLLECTOR CURRENT　IC (mA) 4 2019-01-07 RN1131MFV, RN1132MFV Marking Type Name Marking RN1131MFV RN1132MFV © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-01-07 RN1131MFV, RN1132MFV RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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