RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
High current type (IC(MAX) = 800mA) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Low VCE (sat) Complementary to RN2221~2227 Unit: mm
Equivalent Circuit
Type No. RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 R1 (kΩ) 1 2.2 4.7 10 0.47 1 2.2 R2 (kΩ) 1 2.2 4.7 10 10 10 10
JEDEC EIAJ TOSHIBA Weight: 0.13g
― ― 2-4E1A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage RN1221~1227 RN1221~1224 Emitter-base voltage RN1225, 1226 RN1227 Collector current Collector power dissipation Junction temperature Storage temperature range RN1221~1227 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 10 5 6 800 300 150 −55~150 mA mW °C °C V Unit V V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current RN1221~1227 RN1221 RN1222 RN1223 Emitter cut-off current RN1224 RN1225 RN1226 RN1227 RN1221 RN1222 RN1223 DC current gain RN1224 RN1225 RN1226 RN1227 Collector-emitter saturation voltage RN1221 RN1222~1227 RN1221 RN1222 RN1223 Input voltage (ON) RN1224 RN1225 RN1226 RN1227 RN1221~1224 Input voltage (OFF) RM1225, 1226 RN1227 Translation frequency Collector output capacitance RN1221~1227 RN1221~1227 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = 5V, IC = 20mA VCB = 10V, IE = 0, f = 1MHz VCE = 5V, IC = 0.1mA VCE = 0.2V, IC = 100mA IC = 50mA, IB = 2mA IC = 50mA, IB = 1mA VCE = 5V, IC = 100mA VEB = 5V, IC = 0 VEB = 6V, IC = 0 VEB = 10V, IC = 0 Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 Min ― ― 3.85 1.75 0.82 0.38 0.365 0.35 0.378 60 65 70 90 90 90 90 ― 1.0 1.4 2.0 3.0 0.6 0.7 1.0 0.8 0.4 0.5 ― ― Typ. ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― 300 7 Max 100 500 7.14 3.25 1.52 0.71 0.682 0.65 0.703 ― ― ― ― ― ― ― 0.25 3.5 4.5 6.5 12.0 2.0 2.5 3.0 1.3 0.8 1.0 ― ― MHz pF V V V ― mA Unit nA
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Electrical Characteristics (Ta = 25°C)
Characteristic RN1221 RN1222 RN1223 Input resistor RN1224 RN1225 RN1226 RN1227 RN1221~1224 Resistor ratio RN1225 RN1226 RN1227 R1/R2 R1 Symbol Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― Test Condition Min 0.7 1.54 3.29 7 0.329 0.7 1.54 0.9 0.0423 0.09 0.2 Typ. 1.0 2.2 4.7 10 0.47 1.0 2.2 1.0 0.047 0.1 0.22 Max 1.3 2.86 6.11 13 0.61 1.3 2.86 1.1 0.0517 0.11 0.24 ― kΩ Unit
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RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN GENERAL
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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