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RN1412

RN1412

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    RN1412 - Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications - Toshiba Se...

  • 详情介绍
  • 数据手册
  • 价格&库存
RN1412 数据手册
RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1412,RN1413 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2412, RN2413 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 5 100 200 150 −55~125 Unit V V V mA mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.012g TO-236MOD SC-59 2-3F1A Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor RN1412 RN1413 Symbol ICBO IEBO hFE (note) VCE (sat) fT Cob R1 Test Circuit ― ― ― ― ― ― ― Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz ― Min ― ― 120 ― ― ― 15.4 32.9 Typ. ― ― ― 0.1 250 3 22 47 Max 100 100 700 0.3 ― 6 28.6 61.1 V MHz pF kW Unit nA nA 1 2001-06-07 RN1412,RN1413 2 2001-06-07 RN1412,RN1413 3 2001-06-07 RN1412,RN1413 Type Name Marking RN1412 RN1413 4 2001-06-07 RN1412,RN1413 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-06-07
RN1412
1. 物料型号: - RN1412 - RN1413

2. 器件简介: - 东芝生产的硅NPN外延型晶体管(PCT工艺),适用于开关、反相器电路、接口电路和驱动电路应用。

3. 引脚分配: - 12 BASE EMITTER - S-MINI 3 COLLECTOR

4. 参数特性: - 集电极-基极电压(VCBO):50V - 集电极-发射极电压(VCEO):50V - 发射极-基极电压(VEBO):5V - 集电极电流(Ic):100mA - 集电极功耗(Pc):200mW - 结温(Tj):150℃ - 存储温度范围(Tstg):-55~125℃

5. 功能详解: - 内置偏置电阻,简化电路设计,减少零件数量和制造过程,与RN2412、RN2413互补。

6. 应用信息: - 适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。不适用于需要极高质量和/或可靠性的设备,或其故障可能导致人员伤亡的设备,如原子能控制仪器、飞机或宇宙飞船仪器、交通仪器、交通信号仪器、燃烧控制仪器、医疗仪器、各种安全设备等。

7. 封装信息: - JEDEC:TO-236MOD - EIAJ:SC-59 - TOSHIBA:2-3F1A - 重量:0.012g
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