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RN1441

RN1441

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    RN1441 - Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications - Toshiba Semico...

  • 详情介绍
  • 数据手册
  • 价格&库存
RN1441 数据手册
RN1441∼RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) Low on resistance: RON = 1Ω (typ.) (IB = 5mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Unit in mm Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 0.012g TO-236MOD SC-59 2-3F1A Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 20 25 300 200 150 −55~150 Unit V V V mA mW °C °C Type No. RN1441 RN1442 RN1443 RN1444 Marking HFE classification A KA LA NA CA B KB LB NB CB Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 RN1441∼RN1444 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance RN1441 Input resistor RN1442 RN1443 RN1444 R1 ― ― Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit Test Condition VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 6V, IC = 4mA VCB = 10V, IE = 0, f = 1MHz Min Typ. Max 0.1 0.1 1200 0.1 V MHz pF Unit μA μA ― ― ― ― ― ― ― ― 200 ― ― ― ― 30 4.8 5.6 10 22 2.2 ― ― ― 3.9 7 15.4 1.54 ― ― 7.3 13 28.6 2.86 kΩ Note : hFE classification A: 200∼700 B: 350∼1200 2 2007-11-01 RN1441∼RN1444 3 2007-11-01 RN1441∼RN1444 4 2007-11-01 RN1441∼RN1444 5 2007-11-01 RN1441∼RN1444 6 2007-11-01 RN1441∼RN1444 7 2007-11-01 RN1441∼RN1444 8 2007-11-01 RN1441∼RN1444 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-11-01
RN1441
### 物料型号 - RN1441, RN1442, RN1443, RN1444

### 器件简介 - TOSHIBA公司生产的晶体管,属于硅NPN外延型(PCT工艺)。 - 这些晶体管适用于静音和开关应用。

### 引脚分配 - S-MINI发射极 - COLLECTOR(集电极)

### 参数特性 - JEDEC: TO-236MOD - EIAJ: SC-59 - TOSHIBA: 2-3F1A

### 功能详解 - 高发射极-基极电压:VEBO = 25V(最小值) - 高反向hFE:反向hFE = 150(典型值),在VCE = -2V、IC = -4mA条件下 - 低导通电阻:RON = 1Ω(典型值),在IB = 5mA条件下 - 内置偏置电阻简化电路设计,减少零件数量和制造过程

### 应用信息 - 这些晶体管适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。 - 不适用于需要极高质量和/或可靠性的设备,或其故障可能导致人员伤亡的设备(如原子能控制仪器、飞机或宇宙飞船仪器、交通信号仪器、燃烧控制仪器、医疗仪器、各种安全设备等)。

### 封装信息 - 重量:0.012g

### 绝对最大额定值(Ta=25°C) - 集电极-基极电压(VCBO):50V - 集电极-发射极电压(VCEO):20V - 发射极-基极电压(VEBO):25V - 集电极电流(Ic):300mA - 集电极功耗(Pc):200mW - 结温(Tj):150°C - 存储温度范围(Tstg):-55~150°C
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