RN1910,LF(CT

RN1910,RN1911 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1910,RN1911 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN2910 to RN2911 3. Equivalent Circuit 4. Packaging and Pin Assignment 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 US6 Start of commercial production 1990-12 ©2021 Toshiba Electronic Devices & Storage Corporation 1 2021-08-24 Rev.2.0 RN1910,RN1911 5. Orderable part number Orderable part number RN1910 AEC-Q101 RN1910,LF RN1911 Note � RN1910,LXGF YES RN1910,LXHF YES RN1911,LF General Use (Note 1) YES RN1911,LXHF YES (Note 1) Automotive Use � RN1911,LXGF Unintended Use General Use (Note 1) Unintended Use (Note 1) Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �) (Q1, Q2 Common) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 Emitter-base voltage VEBO 5 IC 100 mA Collector current Collector power dissipation PC 200 mW Junction temperature (Note 1) Tj 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating ©2021 Toshiba Electronic Devices & Storage Corporation 2 2021-08-24 Rev.2.0 RN1910,RN1911 7. Electrical Characteristics (Unless otherwise specified, T a = 25 �) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Typ. Max Unit nA Collector cut-off current ICBO VCB = 50 V, IE = 0 mA � � 100 Emitter cut-off current IEBO VEB = 5 V, IC = 0 mA � � 100 hFE VCE = 5 V, IC = 1 mA DC current gain Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Input resistance Cob RN1910 120 � 700 � IC = 5 mA, IB = 0.25 mA � 0.1 0.3 V VCE = 10 V, IC = 5 mA � 250 � MHz VCB = 10 V, IE = 0 mA, f = 1 MHz � 3 6 pF 3.29 4.7 6.11 kΩ 7 10 13 R1 - RN1911 8. Marking Fig. 8.1 Mraking RN1910 ©2021 Toshiba Electronic Devices & Storage Corporation Fig. 8.2 3 Mraking RN1911 2021-08-24 Rev.2.0 RN1910,RN1911 9. Characteristics Curves (Note)(Q1, Q2 Common) Fig. 9.1 RN1910 I C -V I(ON) Fig. 9.2 RN1911 I C -V I(ON) Fig. 9.3 RN1910 I C -V I(OFF) Fig. 9.4 RN1911 I C -V I(OFF) Fig. 9.5 RN1910 h FE -I C ©2021 Toshiba Electronic Devices & Storage Corporation Fig. 9.6 4 RN1911 h FE -I C 2021-08-24 Rev.2.0 RN1910,RN1911 Fig. 9.7 Note: RN1910 V CE(sat) -I C Fig. 9.8 RN1911 V CE(sat) -I C The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2021 Toshiba Electronic Devices & Storage Corporation 5 2021-08-24 Rev.2.0 RN1910,RN1911 Package Dimensions Unit: mm Weight: 6.8 mg (typ.) Package Name(s) TOSHIBA: 1-2T1S Nickname: US6 ©2021 Toshiba Electronic Devices & Storage Corporation 6 2021-08-24 Rev.2.0 RN1910,RN1911 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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