RN2107 to RN2109
Bipolar Transistors
Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)
RN2107/08/09
1. Applications
•
Switching
•
Inverter Circuits
•
Interfacing
•
Driver Circuits
2. Features
(1)
AEC-Q101 qualified (Please see the orderable part number list)
(2)
The integrated bias resistor reduces the number of external parts required, making it possible to reduce
system size and assembly time.
(3)
Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
(4)
Complementary to RN1107 to 1109
3. Equivalent Circuit
4. Bias Resistor Values
Part No.
R1 (kΩ)
R2 (kΩ)
RN2107
10
47
RN2108
22
47
RN2109
47
22
Start of commercial production
1990-12
©2021
Toshiba Electronic Devices & Storage Corporation
1
2021-08-30
Rev.1.0
RN2107 to RN2109
5. Packaging and Pin Assignment
1: Base
2: Emitter
3: Collector
SSM
6. Orderable part number
Orderable part number
RN2107
RN2108
RN2109
AEC-Q101
RN2107,LF
Note
�
RN2107,LXGF
YES
RN2107,LXHF
YES
RN2108,LF
General Use
(Note 1)
YES
RN2108,LXHF
YES
RN2109,LF
YES
RN2109,LXHF
YES
(Note 1)
General Use
(Note 1)
Unintended Use
(Note 1)
Automotive Use
�
RN2109,LXGF
Unintended Use
Automotive Use
�
RN2108,LXGF
Note
General Use
(Note 1)
Unintended Use
(Note 1)
Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
RN2107
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
VEBO
-6
RN2108
-7
RN2109
-15
V
Collector current
IC
-100
mA
Collector power dissipation
PC
100
mW
�
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
©2021
Toshiba Electronic Devices & Storage Corporation
2
2021-08-30
Rev.1.0
RN2107 to RN2109
8. Electrical Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
�
-100
�
�
-500
RN2107
IEBO
VEB = -6 V, IC = 0 mA
-0.081
�
-0.15
VEB = -7 V, IC = 0 mA
-0.078
�
-0.145
VEB = -15 V, IC = 0 mA
-0.167
�
-0.311
VCE = -5 V, IC = -10 mA
80
�
�
RN2108
80
�
�
RN2109
70
�
�
hFE
mA
�
RN2107～
RN2109
VCE(sat)
IC = -5 mA, IB = -0.25 mA
�
-0.1
-0.3
V
RN2107
VI(ON)
VCE = -0.2 V, IC = -5 mA
-0.7
�
-1.8
V
-1.0
�
-2.6
-2.2
�
-5.8
-0.5
�
-1.0
RN2108
-0.6
�
-1.16
RN2109
-1.5
�
-2.6
VCE = -10 V, IC = -5 mA
�
200
�
MHz
VCB = -10 V, IE = 0 mA, f = 1
MHz
�
3
6
pF
7
10
13
kΩ
15.4
22
28.6
RN2107
VI(OFF)
Transition frequency
RN2107～
RN2109
fT
Collector output capacitance
RN2107～
RN2109
Cob
RN2107
R1
VCE = -5 V, IC = -0.1 mA
-
RN2108
RN2109
Resistor ratio
nA
�
VCE = -50 V, IB = 0 mA
RN2109
Input resistance
Unit
VCB = -50 V, IE = 0 mA
RN2108
Input voltage (OFF)
Max
ICEO
RN2107
Input voltage (ON)
Typ.
ICBO
RN2109
Collector-emitter saturation
voltage
Min
RN2107～
RN2109
RN2108
DC current gain
Test Condition
32.9
47
61.1
0.191
0.213
0.232
RN2108
0.421
0.468
0.515
RN2109
1.92
2.14
2.35
RN2107
R1/R2
-
V
�
9. Marking
Fig. 9.1
Marking RN2107
Fig. 9.3
Marking RN2109
©2021
Toshiba Electronic Devices & Storage Corporation
Fig. 9.2
3
Marking RN2108
2021-08-30
Rev.1.0
RN2107 to RN2109
10. Characteristics Curves (Note)
Fig. 10.1
RN2107 I C -V I(ON)
Fig. 10.2
RN2108 I C -V I(ON)
Fig. 10.3
RN2109 I C -V I(ON)
Fig. 10.4
RN2107 I C -V I(OFF)
Fig. 10.5
RN2108 I C -V I(OFF)
Fig. 10.6
RN2109 I C -V I(OFF)
©2021
Toshiba Electronic Devices & Storage Corporation
4
2021-08-30
Rev.1.0
RN2107 to RN2109
Fig. 10.7
RN2107 h FE -I C
Fig. 10.9
RN2109 h FE -I C
Fig. 10.10
RN2107 V CE(sat) -I C
RN2108 V CE(sat) -I C
Fig. 10.12
RN2109 V CE(sat) -I C
Fig. 10.11
Note:
Fig. 10.8
RN2108 h FE -I C
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2021
Toshiba Electronic Devices & Storage Corporation
5
2021-08-30
Rev.1.0
RN2107 to RN2109
Package Dimensions
Unit: mm
Weight: 2.4 mg (typ.)
Package Name(s)
TOSHIBA: 2-2H1S
Nickname: SSM
©2021
Toshiba Electronic Devices & Storage Corporation
6
2021-08-30
Rev.1.0
RN2107 to RN2109
RESTRICTIONS ON PRODUCT USE
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
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EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE").
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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©2021
Toshiba Electronic Devices & Storage Corporation
7
2021-08-30
Rev.1.0
