RN2117MFV,L3F

RN2114MFV to RN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2114MFV, RN2115MFV, RN2116MFV RN2117MFV, RN2118MFV Unit: mm Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.  A wide range of resistor values is available for use in various circuits.  Complementary to the RN1114MFV to RN1118MFV Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2114MFV 1 10 RN2115MFV 2.2 10 RN2116MFV 4.7 10 RN2117MFV 10 4.7 RN2118MFV 47 10 VESM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage RN2114MFV to RN2118MFV Symbol Rating Unit VCBO −50 V VCEO −50 V RN2114MFV −5 RN2115MFV −6 RN2116MFV VEBO RN2117MFV −15 RN2118MFV −25 Junction temperature Storage temperature range RN2114MFV to RN2118MFV V IC −100 mA PC(Note1) 150 mW Tj 150 °C Tstg −55 to 150 °C Collector current Collector power dissipation −7 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm) Start of commercial production 2005-02 © 2016-2019 Toshiba Electronic Devices & Storage Corporation 1 2019-01-07 RN2114MFV to RN2118MFV Land Pattern Dimensions (for reference only) unit: mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Symbol Test Condition Input voltage (ON) Input voltage (OFF) Collector output capacitance Input resistor Resistor ratio Typ. Max Unit ICBO VCB = −50 V, IE = 0 A ― ― −100 ICEO VCE = −50 V, IB = 0 A ― ― −500 RN2114MFV VEB = −5 V, IC = 0 A −0.35 ― −0.65 RN2115MFV VEB = −6 V, IC = 0 A −0.37 ― −0.71 VEB = −7 V, IC = 0 A −0.36 ― −0.68 RN2117MFV VEB = −15 V, IC = 0 A −0.78 ― −1.46 RN2118MFV VEB = −25 V, IC = 0 A −0.33 ― −0.63 50 ― ― 30 ― ― ― −0.1 −0.3 RN2114MFV −0.5 ― −2.0 RN2115MFV −0.6 ― −2.5 −0.7 ― −2.5 RN2117MFV −1.5 ― −3.5 RN2118MFV −2.5 ― −10.0 RN2114MFV −0.3 ― −0.9 RN2115MFV −0.3 ― −1.0 −0.3 ― −1.1 RN2117MFV −0.3 ― −3.0 RN2118MFV −0.5 ― −5.7 ― 0.9 ― RN2114MFV 0.7 1.0 1.3 RN2115MFV 1.54 2.2 2.86 3.29 4.7 6.11 RN2117MFV 7.0 10.0 13.0 RN2118MFV 32.9 47 61.1 RN2114MFV ― 0.1 ― RN2115MFV ― 0.22 ― ― 0.47 ― RN2117MFV ― 2.13 ― RN2118MFV ― 4.7 ― RN2114MFV to 2118MFV RN2116MFV RN2114MFV to 16MFV, 18MFV IEBO hFE VCE = −5 V, IC = −10 mA RN2117MFV Collector-emitter saturation voltage Min RN2114MFV to 2118MFV RN2116MFV RN2116MFV RN2114MFV to 2118MFV RN2116MFV RN2116MFV © 2016-2019 Toshiba Electronic Devices & Storage Corporation VCE(sat) VI (ON) VI (OFF) Cob IC = −5 mA, IB = −0.5 mA VCE = −0.2 V, IC = −5 mA VCE = −5 V, IC = −0.1 mA VCB = −10 V, IE = 0 A, f = 1 MHz ― R1 ― R1/R2 2 nA mA ― V V V pF kΩ ― 2019-01-07 RN2114MFV to RN2118MFV © 2016-2019 Toshiba Electronic Devices & Storage Corporation 3 2019-01-07 RN2114MFV to RN2118MFV © 2016-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-01-07 RN2114MFV to RN2118MFV 1000 1000 100 100 10 10 1000 1000 100 100 10 10 10 1000 100 10 © 2016-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-01-07 RN2114MFV to RN2118MFV © 2016-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-01-07 RN2114MFV to RN2118MFV Marking Type Name Marking RN2114MFV RN2115MFV RN2116MFV RN2117MFV RN2118MFV © 2016-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-01-07 RN2114MFV to RN2118MFV RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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