RN2132MFV,L3F

RN2131MFV, RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2131MFV, RN2132MFV Unit: mm Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications  Ultra-small package, suited to very high density mounting  Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost.  A wide range of resistor values is available for use in various circuits.  Complementary to the RN1131MFV, RN1132MFV Equivalent Circuit VESM JEDEC ― JEITA ― TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Characterisstic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA PC (Note1) 150 mW Tj 150 °C Tstg −55 to 150 °C Collector current Collector power dissipation Junction temperature Storage temperature range Note: 1.BASE 2.EMITTER 3.COLLECTOR Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1 : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm) Land Pattern Dimensions (for reference only) Unit: mm 0.5 0.45 1.15 0.4 Start of commercial production 2005-04 0.45 0.4 0.4 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-01-10 RN2131MFV, RN2132MFV Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― Emitter cut-off current IEBO DC current gain Characteristic Collector-emitter saturation voltage Collector output capacitance Min Typ. Max Unit VCB = −50 V, IE = 0 A ― ― −100 nA ― VEB = −5 V, IC = 0 A ― ― −100 nA hFE ― VCE = −5 V, IC = −1 mA 120 ― 400 ― VCE (sat) ― IC = −5 mA, IB = −0.5 mA ― −0.1 −0.3 V Cob ― VCB = −10 V, IE = 0 A, f = 1 MHz ― 0.9 ― pF ― ― 70 100 130 R1 140 200 260 RN2131MFV Input resistor Test Condition RN2132MFV © 2019 Toshiba Electronic Devices & Storage Corporation 2 kΩ 2019-01-10 RN2131MFV, RN2132MFV IC - VI(ON) RN2131MFV RN2131MFV -10000 COMMON EMITTER VCE = -0.2V COLLECTOR CURRENT　　IC (μA) COLLECTOR CURRENT　　IC (mA) -100 -10 Ta = 100°C -25 25 -1 -0.1 -0.1 -1000 -25 25 Ta = 100°C -100 COMMON EMITTER VCE = -5V -10 -1 -10 -100 0-0 INPUT VOLTAGE　VI(ON) ( V) hFE - IC RN2131MFV -2 -3 -4 -5 VCE(sat) - IC -1 1000 Ta = 100°C -25 25 100 COMMON EMITTER VCE = -5V 10 -0.1 -1 INPUT VOLTAGE　VI(OFF) ( V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) ( V) 　 RN2131MFV DC CURRENT GAIN　hFE IC - VI(OFF) -1 　　 -10 -0.1 Ta = 100°C -25 -0.01 -0.1 -100 COLLECTOR CURRENT　　IC (mA) © 2019 Toshiba Electronic Devices & Storage Corporation COMMON EMITTER IC/IB = 10 -1 25 　　 -10 -100 COLLECTOR CURRENT　　IC (mA) 3 2019-01-10 RN2131MFV, RN2132MFV RN2132MFV IC - VI(ON) RN2132MFV -10000 COMMON EMITTER VCE = -0.2V COLLECTOR CURRENT　　IC (μA) COLLECTOR CURRENT　　IC (mA) -100 -10 Ta = 100°C -25 25 -1 -0.1 -0.1 -1000 -25 25 Ta = 100°C -100 COMMON EMITTER VCE = -5V -10 -1 -10 -100 0 -0 INPUT VOLTAGE　VI(ON) ( V) hFE - IC -4 -6 -8 -10 RN2132MFV VCE(sat) - IC -1 1000 Ta = 100°C -25 25 100 COMMON EMITTER VCE = -5V 10 -0.1 -2 INPUT VOLTAGE　VI(OFF) ( V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) ( V) 　 RN2132MFV DC CURRENT GAIN　hFE IC - VI(OFF) -1 　　 -10 -0.1 Ta = 100°C 25 　　 -25 -0.01 -0.1 -100 COLLECTOR CURRENT　　IC (mA) © 2019 Toshiba Electronic Devices & Storage Corporation COMMON EMITTER IC/IB = 10 -1 -10 COLLECTOR CURRENT　　IC (mA) 4 2019-01-10 RN2131MFV, RN2132MFV Marking Type Name Marking RN2131MFV RN2132MFV © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-01-10 RN2131MFV, RN2132MFV RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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