RN2607,RN2608
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2607, RN2608
Unit: mm
Switching, Inverter Circuit,
Interface Circuit and Driver Circuit
Including two devices in SM6 (super mini type with 6 leads)
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process and miniaturize
equipment.
Various resistance values are available to suit various circuit designs.
Complementary to RN1607,RN1608
Equivalent Circuit and Bias Resistor Values
SM6
―
JEDEC
―
JEITA
2-3N1A
TOSHIBA
Weight: 0.015 g (typ.)
Part No
R1 (kΩ)
R2 (kΩ)
RN2607
10
47
RN2608
22
47
Internal Circuit (top view)
Start of commercial production
1988-11
© 2019
Toshiba Electronic Devices & Storage Corporation
1
2019-11-11
RN2607,RN2608
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
−6
RN2607
Emitter-base voltage
VEBO
RN2608
−7
V
Collector current
IC
−100
mA
Collector power dissipation
P C*
300
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
RN2608
Max
Unit
―
―
−100
nA
ICEO
VCE = −50 V, IB = 0 mA
―
―
−500
nA
VEB = −6 V, IC = 0 mA
−0.081
―
−0.15
VEB = −7 V, IC = 0 mA
−0.078
―
−0.145
80
―
―
80
―
―
―
−0.1
−0.3
−0.7
―
−1.8
−1.0
―
−2.6
−0.5
―
−1.0
−0.6
―
−1.16
IEBO
RN2607
DC current gain
Typ.
VCB = −50 V, IE = 0 mA
RN2607
RN2608
Min
ICBO
Collector cut-off current
Emitter cut-off
current
Test Condition
hFE
VCE = −5 V, IC = −10 mA
mA
―
VCE (sat)
IC = −5 mA, IB = −0.25 mA
VI (ON)
VCE = −0.2 V, IC = −5 mA
VI (OFF)
VCE = −5 V, IC = −0.1 mA
Translation frequency
fT
VCE = −10 V, IC = −5 mA
―
200
―
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0 mA , f = 1 MHz
―
3
6
pF
―
7
10
13
R1
15.4
22
28.6
0.191
0.213
0.232
0.421
0.468
0.515
Collector-emitter saturation voltage
RN2607
Input voltage (ON)
RN2608
RN2607
Input voltage (OFF)
RN2608
RN2607
Input resistance
RN2608
RN2607
Resistance ratio
―
R1/R2
RN2608
© 2019
Toshiba Electronic Devices & Storage Corporation
2
V
V
V
kΩ
―
2019-11-11
RN2607,RN2608
Characteristics curves (Q1, Q2 Common)
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
3
2019-11-11
RN2607,RN2608
Characteristics curves (Q1, Q2 Common)
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
4
2019-11-11
RN2607,RN2608
Marking
Part No
Marking
Part No.(abbreviation code)
RN2607
Part No.(abbreviation code)
RN2608
© 2019
Toshiba Electronic Devices & Storage Corporation
5
2019-11-11
RN2607,RN2608
RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as “Product”.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
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design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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2019-11-11
