RN2961FE

RN2961FE~RN2966FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2961FE,RN2962FE,RN2963FE RN2964FE,RN2965FE,RN2966FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN1961FE~RN1966FE Unit: mm Equivalent Circuit and Bias Resistor Values C Type No. RN2961FE RN2962FE R2 RN2963FE RN2964FE E RN2965FE RN2966FE R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 B R1 JEDEC JEITA TOSHIBA ― ― 2-2N1A Weight: 0.003 g (typ.) Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2961FE~2966FE RN2961FE~2966FE RN2961FE~2964FE RN2965FE, 2966FE Symbol VCBO VCEO VEBO IC PC (Note) Tj Tstg Rating −50 −50 −10 −5 −100 100 150 −55~150 Unit V V V mA mW °C °C Equivalent Circuit (top view) 6 5 4 Q1 Q2 1 2 3 Note: Total rating 1 2004-07-01 RN2961FE~RN2966FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Collector cut-off current RN2961FE~2966FE RN2961FE RN2962FE Emitter cut-off current RN2963FE RN2964FE RN2965FE RN2966FE RN2961FE RN2962FE DC current gain RN2963FE RN2964FE RN2965FE RN2966FE Collector-emitter saturation voltage RN2961FE~2966FE RN2961FE RN2962FE Input voltage (ON) RN2963FE RN2964FE RN2965FE RN2966FE Input voltage (OFF) Transition frequency Collector output capacitance RN2961FE~2964FE RN2965FE, 2966FE RN2961FE~2966FE RN2961FE~2966FE RN2961FE RN2962FE Input resistor RN2963FE RN2964FE RN2965FE RN2966FE RN2961FE~2964FE Resistor ratio RN2965FE RN2966FE R1/R2 ⎯ R1 ⎯ VI (OFF) fT Cob VCE = −5 V, IC = −0.1 mA VCE = −10 V, IC = −5 mA VCB = −10 V, IE = 0, f = 1 MHz VI (ON) VCE = −0.2 V, IC = −5 mA VCE (sat) IC = −5 mA, IB = −0.25 mA hFE VCE = −5 V, IC = −10 mA IEBO VEB = −10 V, IC = 0 Symbol ICBO ICEO Test Condition VCB = −50 V, IE = 0 VCE = −50 V, IB = 0 Min ⎯ ⎯ −0.82 −0.38 −0.17 −0.082 VEB = −5 V, IC = 0 −0.078 −0.074 30 50 70 80 80 80 ⎯ −1.1 −1.2 −1.3 −1.5 −0.6 −0.7 −1.0 −0.5 ⎯ ⎯ 3.29 7 15.4 32.9 1.54 3.29 0.9 Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ −0.1 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200 3 4.7 10 22 47 2.2 4.7 1.0 Max −100 −500 −1.52 −0.71 −0.33 −0.15 −0.145 −0.138 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ −0.3 −2.0 −2.4 −3.0 −5.0 −1.1 −1.3 −1.5 −0.8 ⎯ 6 6.11 13 28.6 61.1 2.86 6.11 1.1 kΩ V MHz pF V V mA Unit nA 0.0421 0.0468 0.0515 0.09 0.1 0.11 2 2004-07-01 RN2961FE~RN2966FE RN2961FE RN2962FE RN2963FE RN2964FE RN2965FE RN2966FE 3 2004-07-01 RN2961FE~RN2966FE RN2961FE RN2962FE RN2963FE RN2964FE (µA) (µA) RN2965FE RN2966FE 4 2004-07-01 RN2961FE~RN2966FE RN2961FE RN2962FE RN2963FE RN2964FE RN2965FE RN2966FE 5 2004-07-01 RN2961FE~RN2966FE RN2961FE RN2962FE RN2963FE RN2964FE RN2965FE RN2966FE 6 2004-07-01 RN2961FE~RN2966FE Type Name Marking Type name RN2961FE YYA Type name RN2962FE YYB Type name RN2963FE YYC Type name RN2964FE YYD Type name RN2965FE YYE Type name RN2966FE YYF 7 2004-07-01 RN2961FE~RN2966FE RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 8 2004-07-01