RN47A1_07

RN47A1 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. • Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Equivalent Circuit and Bias Resistor Values Q1 C Q2 C B R1 B R1 E E JEDEC JEITA TOSHIBA ― ― 2-2L1D R1: 4.7 kΩ (Q1, Q2 common) Q1: RN1110F Q2: RN2110F Weight:0.0062g (typ.) Marking 5 4 Equivalent Circuit (top view) 5 4 21 Q2 Q1 1 2 3 1 2 3 1 2007-11-01 RN47A1 Absolute Maximum Ratings (Ta = 25°C) (Q1) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 5 100 Unit V V V mA Absolute Maximum Ratings (Ta = 25°C) (Q2) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −5 −100 Unit V V V mA Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 200 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 2 2007-11-01 RN47A1 Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 1 mA IC = 5 mA, IB = 0.25 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz ⎯ Min ⎯ ⎯ 120 ⎯ ⎯ ⎯ 3.29 Typ. ⎯ ⎯ ⎯ 0.1 250 3 4.7 Max 100 100 700 0.3 ⎯ ⎯ 6.11 V MHz pF kΩ Unit nA nA Electrical Characteristics (Ta = 25°C) (Q2) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −5 V, IC = −1 mA IC = −5 mA, IB = −0.25 mA VCE = −10 V, IC = −5 mA VCB = −10 V, IE = 0, f = 1 MHz ⎯ Min ⎯ ⎯ 120 ⎯ ⎯ ⎯ 3.29 Typ. ⎯ ⎯ ⎯ −0.1 200 3 4.7 Max −100 −100 400 −0.3 ⎯ ⎯ 6.11 V MHz pF kΩ Unit nA nA 3 2007-11-01 RN47A1 Q1 (mA) 4 2007-11-01 RN47A1 Q2 (mA) (μA) 5 2007-11-01 RN47A1 Q1, Q2 Common Pc* – Ta 400 (mW) POWER DISSIPATION PC 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (°C) *: Total Rating 6 2007-11-01 RN47A1 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01