RN4906FE
Bipolar Transistors
Silicon PNP/NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)
RN4906FE
1. Applications
•
Switching
•
Inverter Circuits
•
Interfacing
•
Driver Circuits
2. Features
(1)
AEC-Q101 qualified (Please see the orderable part number list)
(2)
Small package (Dual type)
(3)
The integrated bias resistor reduces the number of external parts required, making it possible to reduce
system size and assembly time.
3. Equivalent Circuit
4. Packaging and Pin Assignment
1: Emitter1
2: Base1
3: Collector2
4: Emitter2
5: Base2
6: Collector1
ES6
Start of commercial production
2000-05
©2021
Toshiba Electronic Devices & Storage Corporation
1
2021-08-18
Rev.1.0
RN4906FE
5. Orderable part number
Orderable part number
AEC-Q101
RN4906FE,LF
Note
�
RN4906FE,LXGF
YES
RN4906FE,LXHF
YES
General Use
(Note 1)
Unintended Use
(Note 1)
Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
6. Q1 Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
Emitter-base voltage
VEBO
-5
IC
-100
Collector current
mA
7. Q2 Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
5
IC
100
Collector current
mA
8. Q1, Q2 Common Absolute Maximum Ratings (Note)
(Unless otherwise specified, T a = 25 �)
Characteristics
Collector power dissipation
Symbol
Rating
Unit
PC
100
mW
�
(Note 1)
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
9. Q1 Electrical Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
�
�
-100
nA
Collector cut-off current
ICBO
VCB = -50 V, IE = 0 mA
Collector cut-off current
ICEO
VCE = -50 V, IB = 0 mA
�
�
-500
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0 mA
-0.074
�
-0.138
mA
hFE
DC current gain
VCE = -5 V, IC = -10 mA
80
�
�
�
VCE(sat)
IC = -5 mA, IB = -0.25 mA
�
-0.1
-0.3
V
Input voltage (ON)
VI(ON)
VCE = -0.2 V, IC = -5 mA
-0.7
�
-1.3
Input voltage (off)
VI(off)
VCE = -5 V, IC = -0.1 mA
-0.5
�
-0.8
fT
VCE = -10 V, IC = -5 mA
�
200
�
MHz
VCB = -10 V, IE = 0 mA, f = 1 MHz
�
3
6
pF
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
©2021
Toshiba Electronic Devices & Storage Corporation
Cob
2
2021-08-18
Rev.1.0
RN4906FE
10. Q2 Electrical Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
nA
Collector cut-off current
ICBO
VCB = 50 V, IE = 0 mA
�
�
100
Collector cut-off current
ICEO
VCE = 50 V, IB = 0 mA
�
�
500
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0 mA
0.074
�
0.138
mA
DC current gain
hFE
VCE = 5 V, IC = 10 mA
80
�
�
�
V
Collector-emitter saturation voltage
VCE(sat)
IC = 5 mA, IB = 0.25 mA
�
0.1
0.3
Input voltage (ON)
VI(ON)
VCE = 0.2 V, IC = 5 mA
0.7
�
1.3
Input voltage (off)
VI(off)
VCE = 5 V, IC = 0.1 mA
0.5
�
0.8
fT
VCE = 10 V, IC = 5 mA
�
250
�
MHz
VCB = 10 V, IE = 0 mA, f = 1 MHz
�
3
6
pF
Transition frequency
Collector output capacitance
Cob
11. Q1, Q2 Common Electrical Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
Input resistance
Resistor ratio
Symbol
Test Condition
Min
Typ.
Max
Unit
R1
-
3.29
4.7
6.11
kΩ
R1/R2
-
0.09
0.1
0.11
�
12. Marking
©2021
Toshiba Electronic Devices & Storage Corporation
3
2021-08-18
Rev.1.0
RN4906FE
13. Characteristics Curves (Note)
Fig. 13.1
Q1 I C -V I(ON)
Fig. 13.2
Q2 I C -V I(ON)
Fig. 13.3
Q1 I C -V I(OFF)
Fig. 13.4
Q2 I C -V I(OFF)
Fig. 13.5
Q1 h FE -I C
©2021
Toshiba Electronic Devices & Storage Corporation
Fig. 13.6
4
Q2 h FE -I C
2021-08-18
Rev.1.0
RN4906FE
Fig. 13.7
Note:
Q1 V CE(sat) -I C
Fig. 13.8
Q2 V CE(sat) -I C
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2021
Toshiba Electronic Devices & Storage Corporation
5
2021-08-18
Rev.1.0
RN4906FE
Package Dimensions
Unit: mm
Weight: 3.0 mg (typ.)
Package Name(s)
TOSHIBA: 1-2X1S
Nickname: ES6
©2021
Toshiba Electronic Devices & Storage Corporation
6
2021-08-18
Rev.1.0
RN4906FE
RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as "Product".
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
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EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE").
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©2021
Toshiba Electronic Devices & Storage Corporation
7
2021-08-18
Rev.1.0
