RN49A2
TOSHIBA Transistor Silicon NPN-PNP Epitaxial Type
(PCT process) (Bias Resistor Built-in Transistor)
RN49A2
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
Unit: mm
Two devices are incorporated into an Ultra-Super-Mini (6-pin)
package.
•
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1
Q2
C
R1
R1
R2
B
R2
B
C
E
E
JEDEC
―
JEITA
―
Q1
TOSHIBA
R1: 47 kΩ, R2: 47 kΩ
Weight:
2-2J1A
0.006g (typ.)
Q2
R1: 2.2 kΩ, R2: 47 kΩ
Q1: RN1104F equivalent
Q2: RN2105F equivalent
Marking
6
Equivalent Circuit (top view)
5
6
4
28
1
2
5
Q2
Q1
1
3
1
4
2
3
2004-03-01
RN49A2
Maximum Ratings (Ta = 25°C) (Q1)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
10
V
IC
100
mA
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
IC
−100
mA
Collector current
Maximum Ratings (Ta = 25°C) (Q2)
Characteristics
Collector current
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
PC (Note)
Rating
Unit
200
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Total rating
2
2004-03-01
RN49A2
Electrical Characteristics (Ta = 25°C) (Q1)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
ICBO
VCB = 50 V, IE = 0
⎯
⎯
100
ICEO
VCE = 50 V, IB = 0
⎯
⎯
500
Emitter cut-off current
IEBO
VEB = 10 V, IC = 0
0.082
⎯
0.15
DC current gain
hFE
VCE = 5 V, IC = 10 mA
80
⎯
⎯
IC = 5 mA, IB = 0.25 mA
⎯
0.1
0.3
Collector cut-off current
Collector-emitter saturation voltage
VCE (sat)
Unit
nA
mA
V
Input voltage (ON)
VI (ON)
VCE = 0.2 V, IC = 5 mA
1.5
⎯
5.0
V
Input voltage (OFF)
VI (OFF)
VCE = 5 V, IC = 0.1 mA
1.0
⎯
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 5 mA
⎯
250
⎯
MHz
Collector output capacitance
Cob
⎯
3
⎯
pF
Input resistance
R1
VCB = 10 V, IE = 0, f = 1 MHz
⎯
32.9
47
61.1
kΩ
Resistance ratio
R1/R2
⎯
0.9
1.0
1.1
⎯
Test Condition
Min
Typ.
Max
Unit
Electrical Characteristics (Ta = 25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
ICBO
VCB = −50 V, IE = 0
⎯
⎯
100
ICEO
VCE = −50 V, IB = 0
⎯
⎯
500
IEBO
VEB = −5 V, IC = 0
−0.078
⎯
−0.145
hFE
nA
mA
VCE = −5 V, IC = −10 mA
80
⎯
⎯
VCE (sat)
IC = −5 mA, IB = −0.25 mA
⎯
−0.1
−0.3
V
Input voltage (ON)
VI (ON)
VCE = −0.2 V, IC = −5 mA
−0.6
⎯
−1.1
V
Input voltage (OFF)
VI (OFF)
VCE = −5 V, IC = −0.1 mA
−0.5
⎯
−0.8
V
Transition frequency
fT
VCE = −10 V, IC = −5 mA
⎯
200
⎯
MHz
⎯
3
⎯
pF
1.54
2.2
2.86
kΩ
DC current gain
Collector-emitter saturation voltage
VCB = −10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
Input resistance
R1
⎯
Resistance ratio
R1/R2
⎯
f=1MHz
3
0.0421 0. 0468 0.0 515
⎯
2004-03-01
RN49A2
Q1
4
2004-03-01
RN49A2
Q2
5
2004-03-01
RN49A2
Q1,Q2
COMMON
PC – Ta
COLLECTER POWER DISSIPATION
PC(mW)
400
300
200
100
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta (°C)
6
2004-03-01
RN49A2
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
7
2004-03-01
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Toshiba:
RN49A2,LF(CT
