SSM3J112TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J112TU
High Speed Switching Applications
•
4V drive
•
Low on-resistance:
Unit: mm
Ron = 790mΩ (max) (@VGS = −4 V)
2.1±0.1
Ron = 390mΩ (max) (@VGS = −10 V)
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
± 20
V
DC
ID
−1.1
Pulse
IDP
−2.2
PD (Note 1)
800
PD (Note 2)
500
Drain power dissipation
1
3
2
A
0.7±0.05
Drain current
+0.1
0.3 -0.05
Rating
0.166±0.05
Symbol
2.0±0.1
Characteristic
0.65±0.05
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
1: Gate
2: Source
3: Drain
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
2
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm )
Note 2: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
V (BR) DSS
ID = −1 mA, VGS = 0
−30
⎯
⎯
V (BR) DSX
ID = −1 mA, VGS = +20 V
−15
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = −30 V, VGS = 0
⎯
⎯
−1
μA
Gate leakage current
IGSS
VGS = ±16V, VDS = 0
⎯
⎯
±1
μA
−0.8
⎯
−1.8
V
S
Gate threshold voltage
Vth
Forward transfer admittance
⏐Yfs⏐
Drain-Source on-resistance
RDS (ON)
VDS = −5 V, ID = −0.1 mA
VDS = −5 V, ID =− 0.5 A
(Note3)
0.5
1.0
⎯
ID = −0.5 A, VGS = −10 V
(Note3)
⎯
310
390
ID = −0.5 A, VGS = −4 V
(Note3)
⎯
610
790
mΩ
Input capacitance
Ciss
VDS = −15 V, VGS = 0, f = 1 MHz
⎯
86
⎯
pF
Output capacitance
Coss
VDS = −15 V, VGS = 0, f = 1 MHz
⎯
25
⎯
pF
Reverse transfer capacitance
Crss
VDS = −15 V, VGS = 0, f = 1 MHz
⎯
14
⎯
pF
ton
VDD = −15 V, ID = −0.5 A,
⎯
14
⎯
toff
VGS = 0 to −4 V, RG = 10 Ω
⎯
8.5
⎯
⎯
0.85
1.2
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
VDSF
ID = 1.1A, VGS = 0 V
Note3: Pulse test
(Note3)
ns
V
Start of commercial production
2005-02
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SSM3J112TU
Switching Time Test Circuit
(a) Test circuit
0
(b) VIN
OUT
0V
10%
IN
RG
−4V
10 μs
(c) VOUT
VDD
VDD = -10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
90%
−4 V
RL
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
JJ5
1
2
1
2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=−0.1mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Take this into consideration when using the device.
Handling Precaution
When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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SSM3J112TU
ID – VDS
ID – VGS
−2
Common Source
Ta = 25°C
−4.5
−10
−10000
−1000
(mA)
−3.5
Drain current ID
Drain current ID
(A)
−4.0
−1.5
−1
−3.0
−0.5
VGS = −2.5 V
0
0
−0.5
−1
−1.5
Drain-Source voltage
Common Source
VDS = −5 V
−100
−25°C
Ta = 100°C
−10
25°C
−1
−0.1
−0.01
0
−2
−1
−2
Gate-Source voltage
VDS (V)
RDS (ON) – ID
−5
VGS (V)
RDS (ON) – VGS
1
2
Common Source
Common Source
Ta = 25°C
ID = −0.5 A
VGS = −4 V
0.8
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
−4
−3
0.6
0.4
−10 V
0.2
1.6
1.2
0.8
Ta = 100°C
0.4
25°C
−25°C
0
0
−0.5
−1.0
−1.5
0
0
−2.0
−5
Drain current ID (A)
−10
−15
Gate-Source voltage
RDS (ON) – Ta
Vth – Ta
Common Source
Common Source
Vth (V)
VGS = −4.0 V
Gate threshold voltage
Drain-Source on resistance
RDS (ON) (Ω)
ID = −0.5 A
0.8
0.6
−10 V
0.4
0.2
0
−25
VGS (V)
−3
1.2
1
−20
0
25
50
75
100
125
ID = −0.1 mA
−2
−1.5
−1
−0.5
0
−25
150
VDS = −5 V
−2.5
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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SSM3J112TU
|Yfs| – ID
C – VDS
500
300
0.3
0.1
0.01
0.03
(pF)
1
100
Capacitance C
Forward transfer admittance ⎪Yfs⎪ (S)
3
50
−10
−100
30
Coss
10
Crss
Common Source
5 Common Source
VDS = −5 V
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
−0.1
Ta = 25°C
0.001
−1
Ciss
−1000
−10000
Drain current ID (mA)
−1
−10
Drain-Source voltage
Dynamic input characteristic
(V)
300
Common Source
ID = −1 A
Ta = 25°C
Switching time t (ns)
VGS (V)
Gate-Source voltage
VDS
t – ID
−10
−8
−100
−12 V
−6
VDD = −24 V
−4
Common Source
VDD = −15 V
VGS = 0∼ −4 V
Ta = 25°C
RG = 10 Ω
100
toff
30
tf
ton
10
−2
tr
0
0
1
2
3
−0.01
3
−0.03
Total gate charge Qg (nC)
IDR – VDS
Drain power dissipation PD(mW)
Drain reverse current IDR (A)
Ta = 25°C
D
IDR
G
−1.2
S
−0.8
−0.4
0
0
0.2
0.4
0.6
Drain-Source voltage
0.8
−1
−3
PD - Ta
1000
Common Source
−1.6
−0.3
Drain current ID (A)
−2
VGS = 0
−0.1
b
800
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
600
a
400
200
0
1
0
VDS (V)
4
20
40 60 80 100 120 140 160
Ambient temperature Ta(°C)
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SSM3J112TU
Rth - tw
Transient thermal impedance Rth(°C/W)
1000
c
b
a
100
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
10
1
0.001
0.01
0.1
1
10
Pulse w idth tw (S)
100
1000
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SSM3J112TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
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except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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