SSM3J114TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J114TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
2.1±0.1
1.5 V drive
Low on-resistance
Ron = 526 mΩ (max) (@ VGS = -1.5 V)
2.0±0.1
Ron = 321 mΩ (max) (@ VGS = -1.8 V)
Ron = 199 mΩ (max) (@ VGS = -2.5 V)
Ron = 149 mΩ (max) (@ VGS = -4.0 V)
+0.1
0.3 -0.05
1.7±0.1
0.65±0.05
•
•
Unit: mm
1
3
2
Symbol
Rating
Unit
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
± 8
V
DC
ID
-1.8
Pulse
IDP
-3.6
PD (Note 1)
800
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Drain current
Drain power dissipation
0.7±0.05
Characteristics
1. Gate
2. Source
3. Drain
A
mW
0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
Weight: 6.6 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note:
Note 1: Mounted on ceramic board
2
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm )
Note 2: Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Marking
Equivalent Circuit (top view)
3
3
JJ7
1
2
1
2
Start of commercial production
2005-10
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2014-03-01
SSM3J114TU
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Symbol
Test Condition
Min
Typ.
Max
V (BR) DSS ID = −1 mA, VGS = 0
−20
⎯
⎯
V (BR) DSX ID = −1 mA, VGS = +8 V
−12
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−10
μA
Gate leakage current
IGSS
VGS = ± 8 V, VDS = 0
⎯
⎯
±1
μA
−0.3
⎯
−1.0
V
1.9
3.9
⎯
S
Vth
VDS = −3 V, ID = −1 mA
⏐Yfs⏐
VDS = -3 V, ID = -0.6 A
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching time
(Note 3)
ID = -0.6 A, VGS = -4.0 V
(Note 3)
⎯
100
149
ID = -0.6 A, VGS = -2.5 V
(Note 3)
⎯
133
199
ID = -0.6 A, VGS = -1.8 V
(Note 3)
⎯
183
321
ID = -0.1 A, VGS = -1.5 V
(Note 3)
⎯
220
526
VDS = −10 V, VGS = 0
f = 1 MHz
⎯
331
⎯
pF
⎯
48
⎯
pF
⎯
39
⎯
pF
Turn-on time
ton
VDD = −10 V, ID = −0.6 A
⎯
19
⎯
Turn-off time
toff
VGS = 0 to −2.5 V, RG = 4.7 Ω
⎯
18
⎯
⎯
7.7
⎯
⎯
4.9
⎯
⎯
2.8
⎯
⎯
0.8
1.2
Total gate charge
Qg
Gate-Source charge
Qgs
Gate-Drain charge
Qgd
Drain-Source forward voltage
VDSF
VDS = −16 V, IDS = -1.2 A,
VGS = − 4 V
ID = 1.8 A, VGS = 0
(Note 3)
mΩ
ns
nC
V
Note 3: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
10%
OUT
0
IN
90%
−2.5 V
RG
−2.5V
10 μs
RL
VDD
(c) VOUT
VDD = -10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25 °C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA
for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a
lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
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SSM3J114TU
ID – VDS
-4
ID – VGS
-10000
-1.8 V
-4 V
Common Source
-2.5 V
VDS = -3 V
(mA)
-3
-100
ID
-1.5 V
-2
Drain current
Drain current
ID
(A)
-1000
VGS = -1.2 V
-1
Ta = 85 °C
-10
25 °C
-1
−25 °C
-0.1
0
Common Source
Ta = 25 °C
0
-0.5
-1
-1.5
Drain - Source voltage
VDS
-0.01
0
-2
-0.2
(V)
-0.4
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
300
250
25 °C
150
Ta = 85 °C
100
0
-2
-4
-6
Gate - Source voltage
Common Source
350
300
250
25 °C
200
150
Ta = 85 °C
100
50
0
-8
−25 °C
0
VGS (V)
-2
RDS (ON) – ID
-6
-8
VGS (V)
RDS (ON) – Ta
500
Common Source
400
Common Source
Ta = 25°C
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
-4
Gate - Source voltage
450
350
300
VGS = -1.5 V
250
200
-1.8 V
150
-2.5 V
100
-4.0 V
50
0
-1.6
ID = -0.6 A
−25 °C
0
-1.4
VGS (V)
400
350
50
-1.2
RDS (ON) – VGS
Common Source
200
-1.0
450
ID = -0.1 A
400
-0.8
Gate - Source voltage
RDS (ON) – VGS
450
-0.6
0
-1
-2
Drain current
-3
ID
400
300
-0.6 A / -2.5 V
200
(A)
-0.6 A / -4.0 V
100
0
−50
-4
ID = -0.1 A / VGS = -1.5 V
-0.6 A / -1.8 V
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
SSM3J114TU
Vth (V)
Gate threshold voltage
Common Source
-0.7
-0.5
VDS = -3 V
ID = -1 mA
10
Forward transfer admittance
-0.6
(S)
|Yfs| – ID
30
⎪Yfs⎪
Vth – Ta
-0.8
-0.4
-0.3
-0.2
-0.1
0
−25
0
25
50
75
100
Ambient temperature
Ta
125
150
Common Source
VDS = -3 V
Ta = 25 °C
3
1
0.3
0.1
0.03
0.01
1
Drain current
(°C)
C – VDS
5000
-100
-10
-1000
ID
-10000
(mA)
Dynamic Input Characteristic
-10
Ciss
300
100
50
30
10
-0.1
-8
VGS
Gate-Source voltage
(pF)
500
Capacitance
1000
C
(V)
3000
Common
Coss
Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
Crss
-1
-10
Drain – Source voltage
VDS
-4
-2
0
-100
VDD = -16 V
-6
Common Source
ID = -1.2 A
Ta = 25 °C
0
5
10
Total gate charge
(V)
15
Qg
20
(nC)
t – ID
IDR – VDS
100
Common Source
VGS = 0 V
(A)
toff
-2
IDR
Common Source
VDD = -10 V
VGS = 0 ∼ -2.5 V
Ta = 25 °C
RG = 4.7 Ω
Drain reverse current
Switching time
tf
ton
10
tr
1
0.01
Drain current
1
ID
10
IDR
G
S
-1
-0.5
0
0.1
D
Ta = 25 °C
-1.5
t
(ns)
1000
0
0.2
0.4
0.6
Drain-Source voltage
(A)
4
0.8
VDS
1
1.2
(V)
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SSM3J114TU
PD - Ta
1000
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b
600
a
400
200
0
0
20
40
60
80
100
120
140
160
A mbient temperature Ta(°C)
Rth - tw
1000
c
Transient thermal impedance Rth(°C/W)
Drain power dissipation PD(mW)
800
b
100
a
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
10
1
0.001
0.01
0.1
1
10
Pulse width tw (S)
5
100
1000
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SSM3J114TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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