SSM3J133TU

SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J133TU ○ Power Management Switch Applications • • 1.5V drive Low ON-resistance: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) 2.1±0.1 1.7±0.1 0.65±0.05 +0.1 0.3 -0.05 3 0.166±0.05 1: Gate 2: Source 3: Drain Unit: mm 2.0±0.1 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID (Note1) IDP (Note1) PD (Note2) t