SSM3J134TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J134TU
○ Power Management Switch Applications
•
•
Unit: mm
1.5 V drive
Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Power dissipation
Rating
Unit
VDSS
-20
V
V
VGSS
±8
DC
ID (Note 1)
-3.2
Pulse
IDP (Note 1)
-6.4
PD (Note 2)
500
Gate-Source voltage
Drain current
Symbol
t < 1s
A
mW
1000
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
1: Gate
UFM
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6mg (typ.)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
Marking
Equivalent Circuit (top view)
3
3
JJM
1
2
1
2
Start of commercial production
2011-02
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SSM3J134TU
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
Test Conditions
V (BR) DSS ID = -1 mA, VGS = 0 V
V (BR) DSX ID = -1 mA, VGS = 5 V
.(Note 4)
Typ.
Max
Unit
-20
⎯
⎯
V
-15
⎯
⎯
V
⎯
⎯
-1
μA
Drain cut-off current
IDSS
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
S
Gate threshold voltage
⏐Yfs⏐
Forward transfer admittance
Drain–source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
VDS = -3 V, ID = -1.0 A
(Note 3)
2.9
5.8
⎯
ID = -1.5 A, VGS = -4.5 V
(Note 3)
⎯
78.5
93
ID = -1.0 A, VGS = -2.5 V
(Note 3)
⎯
97.5
123
ID = -0.5 A, VGS = -1.8 V
(Note 3)
⎯
120
168
ID = -0.25 A, VGS = -1.5 V
(Note 3)
⎯
141
240
⎯
290
⎯
⎯
44
⎯
VDS = -10 V, VGS = 0 V
f = 1 MHz
⎯
32
⎯
ton
VDD = -10 V, ID = -0.5 A
⎯
12
⎯
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
46.2
⎯
⎯
4.7
⎯
⎯
0.4
⎯
⎯
1.0
⎯
⎯
0.9
1.2
Crss
Total gate charge
Qg
Gate-source charge
Qgs1
Gate-drain charge
Qgd
Drain-source forward voltage
VDSF
VDD = -10 V, ID = -2.0 A,
VGS = -4.5 V
ID = 3.2 A, VGS = 0 V
(Note 3)
mΩ
pF
Turn-on time
Reverse transfer capacitance
Switching time
VDS = -20 V, VGS = 0 V
Min
ns
nC
V
Note 3: Pulse test
Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test Circuit
0V
(b) VIN
90%
OUT
0
IN
10%
−2.5 V
RG
−2.5V
10 μs
RL
VDD
(c) VOUT
VDD = －10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
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SSM3J134TU
ID – VDS
ID – VGS
-8
-10
-2.5 V
-4.5 V
-1
(A)
(A)
-1.8 V
Drain current
Drain current
ID
ID
-6
VGS = -1.5 V
-4
-2
Common Source
Ta = 25 °C
0
Pulse Test
0
-0.2
-0.4
-0.6
-0.8
Drain–source voltage
VDS
Common Source
VDS = -3 V
Pulse Test
-0.1
- 25 °C
Ta = 100 °C
-0.01
25 °C
-0.001
-0.0001
0
-1
-1.0
(V)
Gate–source voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
200
25 °C
Ta = 100 °C
100
- 25 °C
-2
-4
-6
Gate–source voltage
300
VGS
-2.5 V
100
VGS = -4.5 V
0
-2.0
-4.0
-6.0
ID
-8.0
(A)
Vth – Ta
-1.0 A / -2.5 V
Gate threshold voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
-1.8 V
-1.0
200
-0.5 A / -1.8 V
-0.25 A / -1.5 V
100
ID = -1.5 A / VGS = -4.5 V
Ambient temperature
200
Drain current
Pulse Test
50
-1.5 V
(V)
RDS (ON) – Ta
0
Pulse Test
0
-8
Common Source
0
−50
(V)
Common Source
Ta = 25°C
100
Ta
Common Source
VDS = -3 V
ID = -1 mA
Vth (V)
Drain–source ON-resistance
RDS (ON) (mΩ)
300
ID = -1.5 A
Common Source
Pulse Test
0
VGS
RDS (ON) – ID
RDS (ON) – VGS
300
0
-2.0
-0.5
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
SSM3J134TU
10
Common Source
VDS = -3 V
Ta = 25°C
Pulse Test
(A)
(S)
⎪Yfs⎪
IDR – VDS
|Yfs| – ID
10
IDR
Drain reverse current
Forward transfer admittance
3
1
0.3
0.1
-0.01
-1
-0.1
Drain current
ID
Common Source
VGS = 0 V
Pulse Test
D
1
IDR
G
-25 °C
S
0.1
Ta =100 °C
0.001
0
-10
0.5
(A)
1.0
Drain–source voltage
C – VDS
1000
25 °C
0.01
VDS
(V)
t – ID
10000
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
toff
300
1000
(ns)
Ciss
tf
100
30
Switching time
Capacitance
t
C
(pF)
1.5
Coss
Common Source
Crss
Ta = 25 °C
f = 1 MHz
VGS = 0 V
100
10 ton
tr
10
-0.1
-1
-10
Drain-source voltage
VDS
1
-0.001
-100
(V)
-0.01
-0.1
Drain current
-1
ID
-10
(A)
Dynamic Input Characteristic
-8
Gate–source voltage
VGS
(V)
Common Source
ID = -2.0 A
Ta = 25°C
-6
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
2
4
Total gate charge
6
8
Qg
10
(nC)
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SSM3J134TU
Rth – tw
PD – Ta
1000
b
Power dissipation PD (mW)
Transient thermal impedance Rth (°C/W)
600
a
100
10
1
0.001
Single pulse
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.36 mm2×3)
0.01
0.1
1
Pulse Width
10
100
800
600
400
200
0
-40
600
tw (s)
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
-20
0
20
40
60
80
Ambient temperature
5
100
120 140
Ta
(°C)
160
2014-03-01
SSM3J134TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
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TOSHIBA sales representative.
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
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except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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