SSM3J15TE

SSM3J15TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit: mm • • Small package Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating −30 ±20 −100 −200 100 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1: Gate 2: Source 3: Drain JEDEC JEITA TOSHIBA ― ― 2-1B1B Weight: 0.0022 g(typ.) Marking 3 Equivalent Circuit (top view) 3 DQ 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3J15TE Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff VDD = −5 V, ID = −10 mA, VGS = 0~−5 V VDS = −3 V, VGS = 0, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 ID = −0.1 mA, VGS = 0 VDS = −30 V, VGS = 0 VDS = −3 V, ID = −0.1 mA VDS = −3 V, ID = −10 mA ID = −10 mA, VGS = −4 V ID = −1 mA, VGS = −2.5 V MIN. ⎯ −30 ⎯ −1.1 20 ⎯ ⎯ ⎯ ⎯ ⎯ TYP. ⎯ ⎯ ⎯ ⎯ ⎯ 8 14 9.1 3.5 8.6 65 175 MAX. ±1 ⎯ −1 −1.7 ⎯ 12 32 ⎯ ⎯ ⎯ UNIT μA V μA V mS Ω pF pF pF ns ⎯ ⎯ ⎯ ⎯ Switching Time Test Circuit (a) Test circuit 0 IN 50 Ω RL VDD −5 V 90% OUT (b) VIN 0V 10% . −5V 10 μs (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = −5 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDD Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM3J15TE ID - VDS -250 Common Source Ta=25°C -10 -7 -5 -1000 Common Source VDS=-3V Ta=100°C -10 25°C -1 -25°C ID - VGS -200 Drain Current ID(mA) -150 -3.3 -100 -3.0 -2.7 -2.5 VGS=-2.3V 0 -0.5 -1 -1.5 Drain-Source Voltage VDS(V) -2 -50 Drain Current ID(mA) -4 -100 -0.1 0 -0.01 0 -1 -2 -3 -4 Gate-Source Voltage VGS(V) -5 Drain-Source on resistance RDS(ON) (Ω) Drain-Source on resistance RDS(ON) (Ω) 40 RDS(ON) - ID RDS(ON) - VGS 20 18 16 14 12 10 8 6 4 2 0 0 -2 -4 -6 -8 Gate-Source Voltage VGS (V) -10 -25°C Ta=100°C 25° Source Common ID= -1mA 30 Common Source Ta=25°C 20 10 VGS=-2.5V -4V 0 -1 -10 -100 Drain Current ID(mA) -1000 RDS(ON) - Ta 30 Drain-Source on resistance RDS(ON) (Ω) Vth - Ta -2 -1.8 Gate threshold valtage Vth(V) -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 Common Source ID=-0.1mA VDS=-3V Common Source 20 VGS=-2.5V,ID=-1mA 10 -4V,-10mA 0 -25 0 25 50 75 100 125 150 Ambient temperature Ta(°C) 0 -25 0 25 50 75 100 125 150 Ambient temperature Ta(°C) 3 2007-11-01 SSM3J15TE |Yfs| - ID 1000 Drain reveres current IDR (mA) Forword transfer admittance |Yfs| (mS) Common Source VDS= -3V Ta=25°C 100 -250 Common Source VGS=0V Ta=25°C IDR - VDS -200 -150 -100 10 -50 1 -1 -10 -100 Drain current ID (mA) -1000 0 0 0.2 0.4 0.6 0.8 1 1.2 Drain-Source voltage VDS (V) 1.4 C - VDS 100 Common Source VGS=0V f=1MHz Ta=25°C 10 Ciss Coss Crss 1 -0.1 -1 -10 Drain-Source voltage VDS (V) -100 10000 t - ID Common Source VDD= -5V VGS=0~-5V Ta=25°C Switching Time　t (ns) toff 1000 tf Capacitance C (pF) 100 ton tr 10 -0.1 -1 -10 Drain Current ID (mA) -100 250 Drain power dissipation Pd (mW) PD - Ta 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta(°C) 4 2007-11-01 SSM3J15TE RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01