SSM3J306T
TOSHIBA Field-Effect Transistor
Silicon P-Channel MOS Type
SSM3J306T
Power management switch Applications
•
•
4 V drive
Low ON-resistance:
Unit: mm
Ron = 225 mΩ (max) (@VGS = −4 V)
Ron = 117 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain–source voltage
Rating
Unit
VDS
−30
V
V
VGSS
± 20
DC
ID
−2.4
Pulse
IDP
−4.8
PD (Note 1)
700
Gate–source voltage
Drain current
Symbol
Drain power dissipation
A
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain–source breakdown voltage
Symbol
−30
⎯
⎯
−15
⎯
⎯
⎯
⎯
−1
μA
Vth
⏐Yfs⏐
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = −30 V, VGS = 0
VGS = ±16 V, VDS = 0
VDS = −5 V, ID = −1 mA
⎯
±1
μA
⎯
−2.6
V
S
(Note 2)
1.6
3.1
⎯
(Note 2)
⎯
80
117
ID = −0.5 A, VGS = −4 V
(Note 2)
⎯
160
225
⎯
280
⎯
⎯
80
⎯
⎯
45
⎯
⎯
2.5
⎯
⎯
1.3
⎯
⎯
1.2
⎯
⎯
16
⎯
⎯
35
⎯
⎯
0.8
1.2
VDS = -15 V, IDS= -2.4 A, VGS = -4 V
ton
VDD = −15 V, ID = −1 A,
Turn-off time
toff
VGS = 0 to −4 V, RG = 10 Ω
VDSF
⎯
VDS = −5 V, ID =− 1 A
VDS = −15 V, VGS = 0, f = 1 MHz
ID = 2.4 A, VGS = 0 V
(Note 2)
V
−1.2
ID = −1 A, VGS = −10 V
Turn-on time
Drain–source forward voltage
Unit
ID = −1 mA, VGS = +20 V
IGSS
Switching time
Max
ID = −1 mA, VGS = 0
Gate leakage current
Drain–source ON-resistance
Typ.
V (BR) DSX
IDSS
Forward transfer admittance
Min
V (BR) DSS
Drain cutoff current
Gate threshold voltage
Test Condition
mΩ
pF
nC
ns
V
Note 2: Pulse test
Start of commercial production
2006-09
1
2014-03-01
SSM3J306T
Switching Time Test Circuit
(a) Test circuit
0
(b) VIN
OUT
0V
10%
IN
RG
−4 V
10 μs
(c) VOUT
VDD
VDD = −15 V
RG = 10 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
90%
−4 V
RL
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
JJ9
1
2
1
2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = −1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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2014-03-01
SSM3J306T
ID – VDS
ID – VGS
-5
-10
−6 V
Common Source
−3.6 V
−3
Drain current
Drain current
−1
ID
−4
VGS = −3.3 V
−2
VDS = −5 V
(A)
−4 V
ID
(A)
−10 V
−0.1
Ta = 100°C
25°C
−0.01
−25°C
−1
−0.001
Common Source
Ta = 25°C
0
0
−0.2
−0.4
−0.6
Drain–source voltage
−0.8
VDS
−0.0001
0
−1
−0.5
(V)
−1.0
−1.5
VGS
−3.5
−4.0
(V)
500
ID = −1 A
450
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
−3.0
RDS (ON) – ID
500
Common Source
400
350
300
25 °C
250
200
Ta = 100°C
150
100
50
0
−2
−4
−6
−8
VGS
Common Source
450
Ta = 25°C
400
350
300
250
200
VGS = −4.0 V
150
100
−10 V
50
−25°C
Gate–source voltage
0
−10
0
−1
Drain current
−4
ID
−5
(A)
Vth – Ta
500
−2.0
Vth (V)
Common Source
Gate threshold voltage
400
300
ID = –0.5 A / VGS = –4.0 V
200
100
0
−50
−3
−2
(V)
RDS (ON) – Ta
Drain–source on-resistance
RDS (ON) (mΩ)
−2.5
Gate–source voltage
RDS (ON) – VGS
0
−2.0
–1.0 A / –10 V
−1.5
−1.0
−0.5
Common source
VDS = −5 V
0
0
50
Ambient temperature
100
Ta
150
−50
(°C)
ID = −1 mA
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
SSM3J306T
IDR – VDS
10
(A)
Common Source
VDS = −5 V
IDR
1
0.3
0.1
−0.01
−1
−0.1
Drain current
ID
Common Source
Ta = 25°C
IDR
G
S
0.1
Ta = 100°C
0.01
25°C
0.001
−25°C
0.0001
0
−10
D
VGS = 0 V
1
Ta = 25°C
3
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
(S)
|Yfs| – ID
10
0.2
(A)
0.4
0.6
Drain–source voltage
0.8
1.0
VDS
(V)
t – ID
C – VDS
600
1000
Common Source
VDD = −10 V
VGS = 0 to −4 V
Ta = 25°C
RG = 10 Ω
300
(ns)
500
Ciss
tf
100
Switching time
t
C
(pF)
toff
Capacitance
1.2
100
Coss
50
30
Common Source
Crss
Ta = 25°C
f = 1 MHz
VGS = 0 V
10
−0.1
−1
−10
Drain–source voltage
VDS
10
tr
1
0.01
−100
ton
0.1
Drain current
(V)
1
ID
10
(A)
Dynamic Input Characteristic
10
ID = -2.4 A
Ta = 25°C
8
Gate–Source voltage
VGS
(V)
Common Source
VDD = -15V
6
VDD = -24V
4
2
0
0
2
4
Total Gate Charge
8
6
Qg
10
(nC)
4
2014-03-01
SSM3J306T
rth – tw
PD – Ta
Drain power dissipation PD (mW)
Transient thermal impedance Rth (°C/W)
1000
b
100
a
Single Pulse
10
a: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 0.8 mm2×3)
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
800
a
600
400
b
200
0
-40
1000
a: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
2
Cu Pad : 0.8 mm ×3)
-20
0
20
40
60
80
Ambient temperature
(s)
5
100 120 140 160
Ta
(°C)
2014-03-01
SSM3J306T
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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