SSM3J307T(TE85L,F)

SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch Applications ○ High-Speed Switching Applications +0.2 2.8-0.3 1.5 V drive Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V) Ron = 56 mΩ (max) (@VGS = -1.8 V) Ron = 40 mΩ (max) (@VGS = -2.5 V) Ron = 31 mΩ (max) (@VGS = -4.5 V) Drain power dissipation VDSS -20 V V VGSS ±8 ID (Note 1) -5.0 Pulse IDP (Note 1) -10 PD (Note 2) 700 t = 10 s 1250 0.4±0.1 0.95 1.9±0.2 0.15 Unit DC Gate-Source voltage Drain current Rating 0.16±0.05 Drain-Source voltage Symbol ３ 0～0.1 Characteristic ２ 0.7±0.05 Absolute Maximum Ratings (Ta = 25°C) １ 0.95 +0.2 1.6-0.1 2.9±0.2 • • Unit: mm A 1: Gate mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C TSM 2: Source 3: Drain JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-3S1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute Weight: 10 mg (typ.) maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The junction temperature should not exceed 150°C during use. 2 Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 3 3 KDP 1 2 1 2 Start of commercial production 2008-09 1 2014-03-01 SSM3J307T Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = +8 V -12 ⎯ ⎯ Drain cut-off current IDSS VDS = -20V, VGS = 0 V ⎯ ⎯ -10 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V ⏐Yfs⏐ VDS = -3 V, ID = -4.0 A (Note 3) 9.8 ⎯ ⎯ S ID = -4.0 A, VGS = -4.5 V (Note 3) ⎯ 25 31 ID = -4.0 A, VGS = -2.5 V (Note 3) ⎯ 31 40 ID = -1.5 A, VGS = -1.8 V (Note 3) ⎯ 38 56 ID = -0.75 A, VGS = -1.5 V (Note 3) ⎯ 46 83 ⎯ 1170 ⎯ ⎯ 250 ⎯ ⎯ 200 ⎯ ⎯ 19 ⎯ ⎯ 14.2 ⎯ ⎯ 4.8 ⎯ Drain-Source breakdown voltage Gate threshold voltage Forward transfer admittance Drain–source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time Turn-on time Turn-off time VDS = −10 V, ID = −5.0 A VGS = −4.5 V ton VDD = -10 V, ID = -2.0 A, ⎯ 35 ⎯ toff VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 160 ⎯ ⎯ 0.83 1.2 VDSF Drain-Source forward voltage VDS = -10 V, VGS = 0 V, f = 1 MHz ID = 5.0 A, VGS = 0 V (Note 3) V mΩ pF nC ns V Note 3: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 0V 10% OUT 0 IN 90% −2.5 V RG −2.5V 10 μs RL VDD (c) VOUT VDD = − 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below −1 mA for the SSM3J307T. Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 SSM3J307T ID – VDS -8V -2.5V ID – VGS -10 -1.8 V -8.0 (A) -3.0V ID -4.0 Drain current Drain current -6.0 VGS=-1.2 V -2.0 0 Common Source Ta = 25 °C 0 -0.2 -0.4 Common Source VDS = -3 V -1.5 V -4.5V ID (A) -10 -0.6 -0.8 Drain–source voltage VDS -1 Ta = 100 °C -0.1 25 °C − 25 °C -0.01 -0.001 -0.0001 0 -1 -1.0 (V) Gate–source voltage RDS (ON) – VGS ID =-4.0A Common Source Common Source Ta = 25°C Ta = 25°C Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) (V) RDS (ON) – ID 100 25 °C 50 Ta = 100 °C 100 -1.2 V 50 -1.5 V 0 -2 -4 -6 VGS = -4.5 V Gate–source voltage VGS 0 -8 -1.8V -2.5 V − 25 °C 0 (V) -2.0 -4.0 RDS (ON) – Ta ID -10 -8.0 (A) Vth – Ta -1.0 Gate threshold voltage 100 -1.5 A / -1.8V -0.75 A / -1.5 V -4.0 A / -2.5 V 50 ID = -4.0 A / VGS = -4.5 V 0 Common Source Vth (V) Common Source 0 −50 -6.0 Drain current 150 Drain–source ON-resistance RDS (ON) (mΩ) VGS 150 150 0 -2.0 50 Ambient temperature 100 Ta VDS = -3 V ID = -1 mA -0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2014-03-01 IDR – VDS |Yfs| – ID 100 10 (A) 10 VDS = -3 V Ta = 25°C IDR 30 Drain reverse current ⎪Yfs⎪ Common Source Forward transfer admittance (S) SSM3J307T 3 1 0.3 Common Source VGS = 0 V D 1 IDR G S 0.1 Ta =100 °C 25 °C 0.01 −25 °C 0.1 -0.01 -1 -0.1 Drain current ID 0.001 0 -10 (A) (pF) C 1000 0.8 VDS toff (ns) 1000 (V) t Capacitance 1.2 Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7Ω tf Ciss 1.0 t – ID 10000 5000 3000 0.6 Drain–source voltage C – VDS 10000 0.4 0.2 Switching time 500 300 Coss Crss 100 50 Common Source 30 Ta = 25°C f = 1 MHz VGS = 0 V 10 -0.1 -1 -10 Drain–source voltage ton 10 tr 1 -0.001 -100 VDS 100 (V) -0.01 -0.1 Drain current -1 ID -10 (A) Dynamic Input Characteristic -8 Gate–source voltage VGS (V) Common Source ID = -5.0 A Ta = 25°C -6 -4 VDD = - 10 V VDD = - 16 V -2 0 0 10 20 Total Gate Charge 30 Qg 40 (nC) 4 2014-03-01 SSM3J307T Rth – tw PD – Ta 1000 Drain power dissipation PD (mW) Transient thermal impedance Rth (°C/W) 1000 b 100 a 10 1 0.001 a: Mounted on FR4 Board (25.4 mm × 25.4 mm × 1.6 mm , Cu Pad : 645 mm2) b: Mounted on FR4 Board (25.4 mm × 25.42mm × 1.6 mm , Cu Pad: 0.8 mm ×3) 0.01 0.1 1 Pulse width 10 tw 100 800 a 600 400 b 200 0 -40 1000 a: Mounted on FR4 Board (25.4 mm × 25.4 mm × 1.6 mm , Cu Pad : 645 mm2) b: Mounted on FR4 Board (25.4 mm × 25.42mm × 1.6 mm , Cu Pad: 0.8 mm ×3) -20 0 20 40 60 80 Ambient temperature (s) 5 100 120 Ta 140 160 (°C) 2014-03-01 SSM3J307T RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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