SSM3J325F
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J325F
○ Power Management Switch Applications
Unit: mm
+0.5
2.5-0.3
1.5-V drive
Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 179 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 150 mΩ (max) (@VGS = -4.5 V)
+0.1
0.4-0.05
1
2
3
Rating
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
DC
ID (Note 1)
-2.0
Pulse
IDP (Note 1)
-4.0
Drain current
PD (Note 2)
Power dissipation
Unit
A
600
t = 1s
0~0.1
Symbol
+0.2
1.1-0.1
Characteristic
0.3
Absolute Maximum Ratings (Ta = 25°C)
+0.1
0.16-0.06
1.9
0.95 0.95
+0.25
1.5-0.15
2.9±0.2
•
•
mW
1200
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
S-MINI
1.Gate
2.Source
3.Drain
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-59
temperature/current/voltage and the significant change in
TOSHIBA
2-3F1F
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 12 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
Equivalent Circuit
3
3
KFE
1
2
1
2
Start of commercial production
2010-01
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SSM3J325F
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
Unit
-20
―
―
V
-15
―
―
V
―
―
-1
μA
V (BR) DSS ID = -1 mA, VGS = 0 V
V (BR) DSX ID = -1 mA, VGS = 5 V
Drain cut-off current
IDSS
Gate leakage current
.(Note 4)
VDS = -20 V, VGS = 0 V
IGSS
VGS = ±8 V, VDS = 0 V
―
―
±1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.3
―
-1.0
V
Forward transfer admittance
|Yfs|
S
Drain–source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
(Note 3)
2.2
4.4
―
(Note 3)
―
123
150
ID = -0.6 A, VGS = -2.5 V
(Note 3)
―
143
179
ID = -0.4 A, VGS = -1.8 V
(Note 3)
―
170
231
ID = -0.2 A, VGS = -1.5 V
(Note 3)
―
192
311
VDS = -10 V, VGS = 0 V
f = 1 MHz
―
270
―
―
40
―
―
32
―
Turn-on time
ton
VDD = -10 V, ID = -1.0 A
―
17
―
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
―
43
―
―
4.6
―
Reverse transfer capacitance
Switching time
VDS = -3 V, ID = -1.0 A
ID = -1.0 A, VGS = -4.5 V
Crss
Total gate charge
Qg
Gate-source charge
Qgs1
Gate-drain charge
Qgd
Drain-source forward voltage
VDSF
VDD = -10 V, IDD = -2.0 A,
VGS = -4.5V
ID = 2.0 A, VGS = 0 V
(Note 3)
―
0.4
―
―
0.9
―
―
0.97
1.2
mΩ
pF
ns
nC
V
Note 3: Pulse test
Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that
the drain-source breakdown voltage is lowered in this mode.
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
90%
OUT
0
IN
10%
−2.5 V
RG
−2.5V
10 μs
RL
(c) VOUT
VDS (ON)
90%
VDD
VDD = -10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
10%
VDD
tr
ton
tf
toff
Notice on Usage
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the
SSM3J325F). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and drain power dissipation PD vary depending on board material, board area, board
thickness and pad area. When using this device, please take heat dissipation into consideration.
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SSM3J325F
ID – VDS
ID – VGS
-5
-10
-1.8 V
-1
Pulse test
(A)
-4
Drain current ID
Drain current ID
(A)
-4.5V
Common Source
VDS = -3 V
-2.5V
-3
VGS = -1.5 V
-2
-1
-0.1
Ta = 100 °C
-25 °C
-0.01
25 °C
-0.001
Common Source
Ta = 25 °C
Pulse test
0
0
-0.4
-0.2
-0.6
-0.8
Drain–source voltage VDS
-0.0001
0
-1
-1.0
(V)
Gate–source voltage VGS
400
ID = -1.0A
Common Source
Common Source
Pulse test
300
200
25 °C
Ta = 100 °C
100
-25 °C
0
0
-2
-4
-6
Gate–source voltage VGS
-1.5 V
Ta = 25°C
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
(V)
RDS (ON) – ID
RDS (ON) – VGS
400
Pulse test
300
-1.8V
200
-2.5 V
100
VGS = -4.5 V
0
-8
0
(V)
-2.0
-4.0
Drain current ID
Gate threshold voltage Vth (V)
Pulse test
300
-0.6 A / -2.5 V
-0.4 A / -1.8V
-0.2 A / -1.5 V
ID = -1.0 A / VGS = -4.5 V
100
0
−50
-8.0
(A)
-1.0
Common Source
VDS = -3 V
ID = -1 mA
Common Source
200
-6.0
Vth – Ta
RDS (ON) – Ta
400
Drain–source ON-resistance
RDS (ON) (mΩ)
-2.0
0
50
100
-0.5
0
−50
150
Ambient temperature Ta (°C)
0
50
100
150
Ambient temperature Ta (°C)
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SSM3J325F
IDR – VDS
|Yfs| – ID
10
Common Source
VDS = -3 V
VGS = 0 V
Ta = 25°C
(A)
(S)
Common Source
Forward transfer admittance |Yfs|
10
Drain reverse current IDR
Pulse test
3
1
0.3
0.1
-0.01
-1
-0.1
Drain current ID
1
Pulse test
D
IDR
G
-25 °C
S
0.1
Ta =100 °C
0.001
0
-10
25 °C
0.01
0.5
(A)
1.0
Drain–source voltage VDS
C – VDS
(V)
t – ID
1000
10000
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
toff
300
1000
(ns)
Ciss
Switching time t
Capacitance C (pF)
1.5
100
Coss
30 Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
-0.1
-1
Crss
tf
100
ton
10
tr
-10
Drain-source voltage VDS
1
-0.001
-100
(V)
-0.01
-0.1
Drain current ID
-1
-10
(A)
Dynamic Input Characteristic
-8
Gate–source voltage VGS
(V)
Common Source
ID = -2.0 A
Ta = 25°C
-6
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
2
4
Total Gate Charge
6
8
10
Qg (nC)
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SSM3J325F
PD – Ta
Rth – tw
1000
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.8 mm2 ×3)
b
Power dissipation PD (mW)
Transient thermal impedance Rrh
(°C/W )
1000 a: Mounted on FR4 board
a
100
10
Single pulse
a. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.8 mm2×3)
1
0.001
0.01
0.1
1
10
100
800
600
400
b
200
0
-40
1000
a
-20
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
Pulse width tw (s)
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SSM3J325F
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
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except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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