SSM3J356R,LXHF

SSM3J356R MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J356R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number SSM3J356R,LF AEC-Q101 Note � SSM3J356RLXGF YES SSM3J356R,LXHF YES General Use (Note 1) Unintended Use (Note 1) Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2015-09 ©2016-2021 Toshiba Electronic Devices & Storage Corporation 1 2021-01-15 Rev.5.0 SSM3J356R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �) Characteristics Symbol Rating Unit V Drain-source voltage VDSS -60 Gate-source voltage VGSS -20/+10 Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (t ≤ 10 s) (Note 1) ID -2 (Note 1), (Note 2) IDP -6 (Note 3) PD 1 (Note 3) A W 2 Channel temperature Tch 150 Storage temperature Tstg -55 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 �. Note 2: Repetitive rating; pulse width limited by maximum channel temperature. Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note: Note: Note: This transistor is sensitive to electrostatic discharge and should be handled with care. The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. ©2016-2021 Toshiba Electronic Devices & Storage Corporation 2 2021-01-15 Rev.5.0 SSM3J356R 6. Electrical Characteristics 6.1. Static Characteristics (Unless otherwise specified, T a = 25 �) Characteristics Symbol Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Forward transfer admittance IGSS VGS = -16 V/+10 V, VDS = 0 V IDSS VDS = -60 V, VGS = 0 V V(BR)DSS ID = -1 mA, VGS = 0 V (Note 1) V(BR)DSX ID = -1 mA, VGS = 10 V Typ. Max Unit � � ±10 µA � � -10 µA -60 � � V -50 � � � -2.0 V RDS(ON) ID = -1.0 A, VGS = -4.0 V � 280 400 mΩ ID = -1.0 A, VGS = -4.5 V � 270 360 ID = -1.0 A, VGS = -10 V � 240 300 VDS = -10 V, ID = -1 A � 4.7 � Vth (Note 2) Min -0.8 Gate threshold voltage Drain-source on-resistance Test Condition (Note 2) |Yfs| VDS = -10 V, ID = -1 mA S Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. Note 2: Pulse measurement. 6.2. Dynamic Characteristics (Unless otherwise specified, T a = 25 �) Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time (turn-on time) ton Switching time (turn-off time) toff Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz VDD = -30 V, ID = -1.0 A VGS = 0 to -4.5 V, RG = 10 Ω Duty ≤ 1 %, VIN: tr, tf < 5 ns, Common source, See Chapter 5.3. Min Typ. Max Unit � 330 � pF � 25 � � 40 � � 29 � � 48 � ns 6.3. Switching Time Test Circuit Fig. 6.3.1 Switching Time Test Circuit Fig. 6.3.2 Input Waveform/Output Waveform 6.4. Gate Charge Characteristics (Unless otherwise specified, T a = 25 �) Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Gate-source charge 1 Qgs1 Gate-drain charge Qgd ©2016-2021 Toshiba Electronic Devices & Storage Corporation Test Condition VDD = -48 V, VGS = -10 V, ID = -2.0 A 3 Min Typ. Max Unit � 8.3 � nC � 0.8 � � 1.7 � 2021-01-15 Rev.5.0 SSM3J356R 6.5. Source-Drain Characteristics (Unless otherwise specified, T a = 25 �) Characteristics Diode forward voltage Symbol (Note 1) VDSF Test Condition ID = 2.0 A, VGS = 0 V Min Typ. Max Unit � 0.9 1.2 V Note 1: Pulse measurement. 7. Marking ©2016-2021 Toshiba Electronic Devices & Storage Corporation 4 2021-01-15 Rev.5.0 SSM3J356R 8. Characteristics Curves (Note) Fig. 8.1 Fig. 8.3 Fig. 8.5 I D - V DS Fig. 8.2 R DS(ON) - V GS Fig. 8.4 R DS(ON) - T a ©2016-2021 Toshiba Electronic Devices & Storage Corporation I D - V GS R DS(ON) - I D Fig. 8.6 5 V th - T a 2021-01-15 Rev.5.0 SSM3J356R Fig. 8.7 Fig. 8.9 I DR - V DS Fig. 8.8 Dynamic Input Characteristics Fig. 8.11 Fig. 8.10 r th - t w ©2016-2021 Toshiba Electronic Devices & Storage Corporation Fig. 8.12 6 C - V DS t - ID Safe Operating Area 2021-01-15 Rev.5.0 SSM3J356R Fig. 8.13 Note: PD - Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016-2021 Toshiba Electronic Devices & Storage Corporation 7 2021-01-15 Rev.5.0 SSM3J356R Package Dimensions Unit: mm Weight: 0.011 g (typ.) Package Name(s) TOSHIBA: 2-3Z1S Nickname: SOT-23F ©2016-2021 Toshiba Electronic Devices & Storage Corporation 8 2021-01-15 Rev.5.0 SSM3J356R RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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