SSM3K01T(TE85L,F)

SSM3K01T(TE85L,F)

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    SOT-23

  • 描述:

    MOSFET N-CH 30V 3.2A TSM

  • 数据手册
  • 价格&库存
SSM3K01T(TE85L,F) 数据手册
SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±10 V ID 3.2 IDP (Note 2) 6.4 PD (Note 1) 1250 DC Drain current Pulse Drain power dissipation (Ta = 25°C) A mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-3S1A temperature, etc.) may cause this product to decrease in the Weight: 10 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account. Start of commercial production 2000-04 1 2014-03-01 SSM3K01T Marking Equivalent Circuit 3 3 KW 1 2 1 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current IGSS Drain-Source breakdown voltage V (BR) DSS Drain Cut-off current IDSS Test Condition Min Typ. Max Unit VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA ID = 1 mA, VGS = 0 30 ⎯ ⎯ V VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 1.6 A (Note3) 2.6 5.2 ⎯ S Drain-Source ON resistance RDS (ON) ID = 1.6 A, VGS = 4 V (Note3) ⎯ 85 120 mΩ Drain-Source ON resistance RDS (ON) ID = 1.3 A, VGS = 2.5 V (Note3) ⎯ 115 150 mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 152 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 41 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 102 ⎯ pF VDD = 15 V, ID = 0.5 A ⎯ 45 ⎯ VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 69 ⎯ Turn-on time Switching time ton Turn-off time toff nS Note3: Pulse test Switching Time Test Circuit (a) Test circuit 10 μs OUT IN RL 0 ID RG 2.5 V VDD = 15 V RG = 4.7 Ω D.U.≤ 1% VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C (b) VIN 2.5 V VGS 0 (c) VOUT 90% 10% VDD 10% VDS 90% VDS (ON) VDD tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 2 2014-03-01 SSM3K01T ID – VDS 4 10 4.0 2.5 3.5 Common Source Common Source Ta = 25°C 2.1 1000 3 2.5 Drain current ID (mA) Drain current ID (A) ID – VGS 10000 1.9 V 2 1.5 1.7 V 1 VGS = 1.5 V 0.5 0 0 0.5 1 1.5 Drain-Source voltage VDS = 3 V −25°C 10 1 0.1 0.01 0 2 0.5 1 RDS (ON) – ID 2 2.5 3 VGS (V) RDS (ON) – Ta 250 Common Source Common Source Ta = 25°C 160 Drain-Source on resistance RDS (ON) (mΩ) Drain-Source on resistance RDS (ON) (mΩ) 1.5 Gate-Source voltage VDS (V) 200 VGS = 2.5 V 120 VGS = 4 V 80 40 0 0 1 2 3 4 200 100 VGS = 4 V, ID = 1.6 A 50 0 −50 5 VGS = 2.5 V, ID = 1.3 A 150 Drain current ID (A) −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) |Yfs| – ID C – VDS 10 1000 Common Source VGS = 0 f = 1 MHz Ta = 25°C Common Source (pF) VDS = 3 V Ta = 25°C Capacitance C Forward transfer admittance |Yfs| (S) Ta = 25°C 100°C 100 1 Ciss 100 Coss Crss 0.1 0.01 0.1 1 10 0.1 10 Drain current ID (A) 1 Drain-Source voltage 3 10 100 VDS (V) 2014-03-01 SSM3K01T t – ID PD – Ta 1000 1.5 Common Source Drain power dissipation PD (W) VDD = 15 V Switching time t (ns) VGS = 0~2.5 V RG = 4.7 Ω Ta = 25°C toff 100 tf ton 0.75 DC 0.5 0.25 0 0 0.1 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) 1 tr 10 0.01 Mounted on FR4 board t = 10 s 1.25 25 50 75 100 125 150 Ambient temperature Ta (°C) 1 Drain current ID (A) Safe operating area 10 ID max (pulsed) 1 ms* ID max (continuous) 1 DC operation Ta = 25°C 0.1 10 s* Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.1 1 Drain-source voltage VDSS max 10 100 VDS (V) rth – tw 1000 Transient thermal impedance rth (°C /W) Drain current ID (A) 10 ms* 100 10 Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) 1 0.001 0.01 0.1 1 Pulse width 4 10 100 1000 tw (s) 2014-03-01 SSM3K01T RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 5 2014-03-01
SSM3K01T(TE85L,F) 价格&库存

很抱歉,暂时无法提供与“SSM3K01T(TE85L,F)”相匹配的价格&库存,您可以联系我们找货

免费人工找货