SSM3K01T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
High Speed Switching Applications
•
•
•
Unit: mm
Small Package
Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V)
: Ron = 150 mΩ (max) (@VGS = 2.5 V)
Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V
(@VDS = 3 V, ID = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±10
V
ID
3.2
IDP
(Note 2)
6.4
PD
(Note 1)
1250
DC
Drain current
Pulse
Drain power dissipation (Ta = 25°C)
A
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
JEDEC
―
JEITA
―
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-3S1A
temperature, etc.) may cause this product to decrease in the
Weight: 10 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm , t = 10 s)
Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
Start of commercial production
2000-04
1
2014-03-01
SSM3K01T
Marking
Equivalent Circuit
3
3
KW
1
2
1
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
IGSS
Drain-Source breakdown voltage
V (BR) DSS
Drain Cut-off current
IDSS
Test Condition
Min
Typ.
Max
Unit
VGS = ±10 V, VDS = 0
⎯
⎯
±1
μA
ID = 1 mA, VGS = 0
30
⎯
⎯
V
VDS = 30 V, VGS = 0
⎯
⎯
1
μA
Gate threshold voltage
Vth
VDS = 3 V, ID = 0.1 mA
0.6
⎯
1.1
V
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 1.6 A
(Note3)
2.6
5.2
⎯
S
Drain-Source ON resistance
RDS (ON)
ID = 1.6 A, VGS = 4 V
(Note3)
⎯
85
120
mΩ
Drain-Source ON resistance
RDS (ON)
ID = 1.3 A, VGS = 2.5 V
(Note3)
⎯
115
150
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
152
⎯
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
41
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
102
⎯
pF
VDD = 15 V, ID = 0.5 A
⎯
45
⎯
VGS = 0 to 2.5 V, RG = 4.7 Ω
⎯
69
⎯
Turn-on time
Switching time
ton
Turn-off time
toff
nS
Note3: Pulse test
Switching Time Test Circuit
(a) Test circuit
10 μs
OUT
IN
RL
0
ID
RG
2.5 V
VDD = 15 V
RG = 4.7 Ω
D.U.≤ 1%
VIN: tr, tf < 5 ns
COMMON SOURCE
Ta = 25°C
(b) VIN
2.5 V
VGS
0
(c) VOUT
90%
10%
VDD
10%
VDS
90%
VDS (ON)
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth.
(relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration for using the device.
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2014-03-01
SSM3K01T
ID – VDS
4
10
4.0
2.5
3.5
Common Source
Common Source
Ta = 25°C
2.1
1000
3
2.5
Drain current ID (mA)
Drain current ID (A)
ID – VGS
10000
1.9 V
2
1.5
1.7 V
1
VGS = 1.5 V
0.5
0
0
0.5
1
1.5
Drain-Source voltage
VDS = 3 V
−25°C
10
1
0.1
0.01
0
2
0.5
1
RDS (ON) – ID
2
2.5
3
VGS (V)
RDS (ON) – Ta
250
Common Source
Common Source
Ta = 25°C
160
Drain-Source on resistance
RDS (ON) (mΩ)
Drain-Source on resistance
RDS (ON) (mΩ)
1.5
Gate-Source voltage
VDS (V)
200
VGS = 2.5 V
120
VGS = 4 V
80
40
0
0
1
2
3
4
200
100
VGS = 4 V, ID = 1.6 A
50
0
−50
5
VGS = 2.5 V, ID = 1.3 A
150
Drain current ID (A)
−25
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
|Yfs| – ID
C – VDS
10
1000
Common Source
VGS = 0
f = 1 MHz
Ta = 25°C
Common Source
(pF)
VDS = 3 V
Ta = 25°C
Capacitance C
Forward transfer admittance
|Yfs| (S)
Ta = 25°C
100°C
100
1
Ciss
100
Coss
Crss
0.1
0.01
0.1
1
10
0.1
10
Drain current ID (A)
1
Drain-Source voltage
3
10
100
VDS (V)
2014-03-01
SSM3K01T
t – ID
PD – Ta
1000
1.5
Common Source
Drain power dissipation PD (W)
VDD = 15 V
Switching time t (ns)
VGS = 0~2.5 V
RG = 4.7 Ω
Ta = 25°C
toff
100
tf
ton
0.75
DC
0.5
0.25
0
0
0.1
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
1
tr
10
0.01
Mounted on FR4 board
t = 10 s
1.25
25
50
75
100
125
150
Ambient temperature Ta (°C)
1
Drain current ID (A)
Safe operating area
10
ID max (pulsed)
1 ms*
ID max (continuous)
1
DC operation
Ta = 25°C
0.1
10 s*
Mounted on FR4 board
(25.4 mm × 25.4 mm
× 1.6 t,
2
Cu Pad: 645 mm )
*: Single nonrepetitive
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
Drain-source voltage
VDSS
max
10
100
VDS (V)
rth – tw
1000
Transient thermal impedance rth (°C /W)
Drain current ID (A)
10 ms*
100
10
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
1
0.001
0.01
0.1
1
Pulse width
4
10
100
1000
tw (s)
2014-03-01
SSM3K01T
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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