SSM3K123TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K123TU
Power Management Switch Applications
High-Speed Switching Applications
Unit: mm
Ron = 66 mΩ (max) (@VGS = 1.5 V)
Ron = 43 mΩ (max) (@VGS = 1.8 V)
Ron = 32 mΩ (max) (@VGS = 2.5 V)
Ron = 28 mΩ (max) (@VGS = 4.0 V)
2.1±0.1
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS
VGSS
ID
IDP
20
± 10
4.2
8.4
800
500
150
−55~150
V
V
PD (Note 1)
PD (Note 2)
Tch
Tstg
1
3
2
A
0.7±0.05
Characteristics
2.0±0.1
Absolute Maximum Ratings (Ta = 25°C)
+0.1
0.3 -0.05
1.7±0.1
0.166±0.05
1.5 V drive
Low ON-resistance:
0.65±0.05
•
•
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 )
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
UFM
1: Gate
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
⏐Yfs⏐
Drain-Source ON-resistance
RDS (ON)
Drain-Source breakdown voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Turn-on time
Switching time
Turn-off time
Drain-Source forward voltage
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
Test Condition
ID = 1 mA, VGS = 0V
ID = 1 mA, VGS = − 10 V
VDS = 20 V, VGS = 0V
VGS = ± 10 V, VDS = 0V
VDS = 3 V, ID = 1 mA
VDS = 3 V, ID = 3.0 A
ID = 3.0 A, VGS = 4.0 V
ID = 3.0 A, VGS = 2.5 V
ID = 1.0 A, VGS = 1.8 V
ID = 0.5 A, VGS = 1.5 V
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, IDS= 4.2 A, VGS = 4 V
VDD = 10 V, ID = 1.0 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω
ID = −4.2 A, VGS = 0 V
Note 3: Pulse test
(Note 3)
Min
Typ.
Max
20
12
⎯
⎯
0.35
12.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
25
19
23
28
35
1010
162
150
13.6
9.8
3.8
17
30
− 0.8
⎯
⎯
1
±1
1.0
⎯
28
32
43
66
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
− 1.2
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
Start of commercial production
2007-04
1
2014-03-01
SSM3K123TU
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
OUT
2.5 V
90%
IN
0V
RG
0
10 μs
(c) VOUT
VDD
VDD = 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
10%
VDD
VDS (ON)
10%
90%
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
KKD
1
2
1
2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM3K123TU
ID – VGS
ID – VDS
10
10
(A)
4.0 V
1.8 V
1.5 V
Common Source
VDS = 3 V
ID
ID
2.5 V
6
0.1
Drain current
Drain current
1
(A)
8
VGS = 1.2 V
4
Ta = 100 °C
0.01
25 °C
2
− 25 °C
0.001
Common Source
Ta = 25 °C
0
0
0.4
0.2
0.6
0.8
Drain - Source voltage
VDS
0.0001
0
1.0
1.0
100
Common Source
Common Source
Drain – Source ON-resistance
RDS (ON) (mΩ)
Drain – Source ON-resistance
RDS (ON) (mΩ)
ID =3.0A
50
25 °C
Ta = 100 °C
Ta = 25°C
50
1.5V
1.8 V
0
2
4
Gate - Source voltage
6
0
8
0
VGS (V)
2
4
ID
10
(A)
Vth – Ta
1.0
100
Common Source
Vth (V)
Common Source
Gate threshold voltage
1.0 A / 1.8 V
0.5A / 1.5 V
3.0A / 2.5 V
ID = 3.0 A / VGS = 4.0 V
0
−50
8
6
Drain current
RDS (ON) – Ta
50
VGS = 4.0 V
2.5 V
− 25 °C
Drain – Source ON-resistance
RDS (ON) (mΩ)
VGS (V)
RDS (ON) – ID
RDS (ON) – VGS
100
0
2.0
Gate - Source voltage
(V)
0
50
Ambient temperature
100
Ta
VDS = 3 V
0.6
0.4
0.2
0
−50
150
(°C)
ID = 1 mA
0.8
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
SSM3K123TU
(S)
10
IDR – VDS
10
Common Source
Common Source
(A)
VGS = 0 V
VDS = 3 V
1
0.3
0.1
0.03
D
IDR
1
IDR
Ta = 25 °C
3
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
|Yfs| – ID
30
G
S
0.1
0.01
100 °C
0.001
25 °C
0.01
0.001
0.1
0.01
1
Drain current
ID
0.0001
0
10
(A)
-0.4
-0.8
-1.0
VDS
-1.2
(V)
t – ID
1000
Common Source
3000
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
toff
(ns)
Ciss
1000
tf
t
100
Capacitance
300
Switching time
C
(pF)
-0.6
Drain-Source voltage
C – VDS
5000
-0.2
−25 °C
Coss
100
Crss
Common Source
30
Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
0.1
1
10
Drain – Source voltage
tr
1
100
VDS
ton
10
0.01
0.1
Drain current
(V)
1
ID
10
(A)
Dynamic Input Characteristic
Common Source
ID = 4.2A
Ta = 25°C
8
VDS = 10 V
Gate-Source voltage
VGS
(V)
10
6
16 V
4
2
0
0
10
30
20
Total Gate Charge
Qg
(nC)
4
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SSM3K123TU
PD – Ta
600
Drain power dissipation PD (mW)
Transient thermal impedance Rth (°C/W)
rth – tw
c
b
100
a
10
1 1
0.001
Single pulse
a: Mounted on ceramic board
(25.4mm × 25.4mm × 0.8t , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2)
c: Mounted on FR4 Board
2
(25.4mm × 25.4mm × 1.6t , Cu Pad : 0.36 mm ×3)
0.01
0.1
1
Pulse width
100
10
tw
1000
800
a: Mounted on ceramic board
(25.4mm × 25.4mm × 0.8t ,
2
Cu Pad : 645 mm )
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
2
Cu Pad : 645 mm )
a
600
b
400
200
0
-40
600
(s)
-20
0
20
40
60
80
Ambient temperature
5
100 120
Ta
140 160
(°C)
2014-03-01
SSM3K123TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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