SSM3K123TU

SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications • • 1.5 V drive Low ON-resistance: Unit: Unit: mm Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V) Ron = 28 mΩ (max) (@VGS = 4.0 V) 0.65±0.05 2.0±0.1 1 2 3 0.166±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 10 4.2 8.4 800 500 150 −55~150 Unit V V mW °C °C 0.7±0.05 A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Note: UFM JEDEC JEITA TOSHIBA 1: Gate 2: Source 3: Drain ― ― 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss Qg Qgs Qgd ton toff VDSF Test Condition ID = 1 mA, VGS = 0V ID = 1 mA, VGS = − 10 V VDS = 20 V, VGS = 0V VGS = ± 10 V, VDS = 0V VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 3.0 A ID = 3.0 A, VGS = 4.0 V ID = 3.0 A, VGS = 2.5 V ID = 1.0 A, VGS = 1.8 V ID = 0.5 A, VGS = 1.5 V Min 20 12 ⎯ ⎯ 0.35 12.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 25 19 23 28 35 1010 162 150 13.6 9.8 3.8 17 30 − 0.8 Max ⎯ ⎯ 1 ±1 1.0 ⎯ 28 32 43 66 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ − 1.2 Unit V μA μA V S mΩ Drain-Source ON-resistance (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Turn-on time Switching time Turn-off time Drain-Source forward voltage VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, IDS= 4.2 A VGS = 4 V VDD = 10 V, ID = 1.0 A, VGS = 0~2.5 V, RG = 4.7 Ω ID = −4.2 A, VGS = 0 V (Note 3) pF nC ns V Note 3: Pulse test 1 2007-11-01 SSM3K123TU Switching Time Test Circuit (a) Test Circuit (b) VIN OUT IN 0V RG 10 μs VDD = 10 V RG = 4.7 Ω D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% 2.5 V 90% 2.5 V 0 VDD (c) VOUT VDD 10% 90% tr ton tf toff VDS (ON) Marking 3 Equivalent Circuit (top view) 3 KKD 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM3K123TU ID – VDS 10 4.0 V 1.8 V 1.5 V 10 Common Source VDS = 3 V ID – VGS (A) 2.5 V ID Drain current Drain current 6 ID 0.1 Ta = 100 °C 0.01 25 °C 0.001 Common Source Ta = 25 °C 0 0 0.2 0.4 0.6 0.8 1.0 0.0001 0 1.0 2.0 − 25 °C 4 VGS = 1.2 V 2 (A) 8 1 Drain - Source voltage VDS (V) Gate - Source voltage VGS (V) RDS (ON) – VGS 100 ID =3.0A 100 Common Source Ta = 25°C RDS (ON) – ID Drain – Source ON-resistance RDS (ON) (mΩ) 50 Drain – Source ON-resistance RDS (ON) (mΩ) Common Source 50 1.5V 1.8 V 25 °C Ta = 100 °C − 25 °C 0 0 2 4 6 8 0 0 2 4 2.5 V VGS = 4.0 V 6 8 10 Gate - Source voltage VGS (V) Drain current ID (A) RDS (ON) – Ta 100 1.0 Vth – Ta Common Source Vth (V) Common Source VDS = 3 V 0.8 ID = 1 m A Drain – Source ON-resistance RDS (ON) (mΩ) Gate threshold voltage 1.0 A / 1.8 V 50 0.5A / 1.5 V 3.0A / 2.5 V 0.6 0.4 ID = 3.0 A / VGS = 4.0 V 0 −50 0.2 0 50 100 150 0 −50 0 50 100 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2007-11-01 SSM3K123TU |Yfs| – ID (S) 30 Common Source 10 3 1 VDS = 3 V Ta = 25 °C 10 Common Source VGS = 0 V IDR – VDS D IDR ⎪Yfs⎪ (A) IDR 1 G 0.1 S Forward transfer admittance 0.3 0.1 Drain reverse current 0.01 100 °C 0.001 25 °C 0.0001 0 −25 °C -0.6 -0.8 -1.0 -1.2 0.03 0.01 0.001 0.01 0.1 1 10 -0.2 -0.4 Drain current ID (A) Drain-Source voltage VDS (V) 5000 3000 C – VDS t – ID 1000 Common Source toff VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω (pF) 1000 (ns) Ciss 100 300 tf C Coss Crss Common Source Ta = 25 °C f = 1 MHz VGS = 0 V 1 10 100 Switching time Capacitance t 100 10 ton 30 tr 10 0.1 1 0.01 0.1 1 10 Drain – Source voltage VDS (V) Drain current ID (A) Dynamic Input Characteristic 10 Common Source ID = 4.2A Ta = 25°C VDS = 10 V VGS 6 (V) 8 Gate-Source voltage 16 V 4 2 0 0 10 20 30 Total Gate Charge Qg (nC) 4 2007-11-01 SSM3K123TU rth – tw Drain power dissipation PD (mW) 1000 c b PD – Ta a: Mounted on ceramic board (25.4mm × 25.4mm × 0.8t , 2 Cu Pad : 645 mm ) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , 2 Cu Pad : 645 mm ) Transient thermal impedance Rth (°C/W) 600 800 a 100 a 600 b 400 10 Single pulse a: Mounted on ceramic board (25.4mm × 25.4mm × 0.8t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) c: Mounted on FR4 Board 2 (25.4mm × 25.4mm × 1.6t , Cu Pad : 0.36 mm ×3) 0.01 0.1 1 10 100 600 200 11 0.001 0 -40 -20 0 20 40 60 80 100 120 140 160 Pulse width tw (s) Ambient temperature Ta (°C) 5 2007-11-01 SSM3K123TU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01