SSM3K15AFU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM3K15AFU
Load Switching Applications
Unit: mm
•
2.5 V drive
•
Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V)
RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
± 20
V
DC
ID
100
Pulse
IDP
400
Drain current
Power dissipation
PD(Note 1)
mA
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
1. Gate
USM
2. Source
3. Drain
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-70
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2E1E
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 6.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm , Cu Pad : 0.6mm2 × 3)
0.6 mm
1.0 mm
Marking
Equivalent Circuit (top view)
3
3
DI
1
2
1
2
Start of commercial production
2012-08
1
2014-03-01
SSM3K15AFU
Electrical characteristics (Ta = 25°C)
Characteristics
Symbol
Drain-Source breakdown voltage
Test Condition
V (BR) DSS
ID = 0.1 mA, VGS = 0 V
V (BR) DSX
ID = 0.1 mA, VGS = -10 V
(Note 3)
Min
Typ.
Max
30
⎯
⎯
16
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = 3 V, ID = 0.1 mA
0.8
⎯
1.5
V
Forward transfer admittance
|Yfs|
mS
Drain-Source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching time
VDS = 3 V, ID = 10 mA
(Note 2)
35
⎯
⎯
ID = 10 mA, VGS = 4 V
(Note 2)
⎯
2.3
3.6
ID = 10 mA, VGS = 2.5 V
(Note 2)
⎯
3.5
6.0
⎯
13.5
⎯
⎯
8.0
⎯
⎯
6.5
⎯
VDS = 3 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
VDD = 5 V, ID = 10 mA
⎯
5.5
⎯
Turn-off time
toff
VGS = 0 to 5 V, RG = 50 Ω
⎯
35
⎯
⎯
-0.85
-1.2
Drain-source forward voltage
VDSF
ID = -100 mA, VGS = 0 V
(Note 2)
Ω
pF
ns
V
Note 2: Pulse test
Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the
drain-source breakdown voltage is lowered in this mode
Switching Time Test Circuit
(a) Test circuit
5 V
OUT
10 μs
RG
IN
0
(b) VIN
VDD = 5 V
RG = 50 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common source
Ta = 25°C
5V
0V
(c) VOUT
VDD
90%
10%
VDD
90%
10%
VDS (ON)
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 0.1 mA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage
than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
Do not use this device under avalanche mode. It may cause the device to break down.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
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2014-03-01
SSM3K15AFU
ID – VDS
ID – VGS
1000
Common source
Ta = 25 °C
Pulse test
10 V
300
ID
3.0 V
100
2.7 V
200
10
Ta = 100 °C
Drain current
Drain current
(mA)
4.0 V
ID
(mA)
400
2.5 V
2.3 V
100
1
− 25 °C
25 °C
0.1
Common source
VDS = 3 V
Pulse test
VGS = 2.1 V
0
0
0.2
0.4
0.6
0.8
Drain-source voltage
VDS
0.01
0
1.0
(V)
1.0
2.1 V
2.3 V
2.5 V
Drain-source ON-resistance
RDS (ON) (Ω)
4
4.0 V
3
2
VGS = 10 V
1
Common source
Ta = 25°C
Pulse test
100
200
Drain current
300
ID
10
8
6
25 °C
4
Ta = 100 °C
2
− 25 °C
0
400
0
2
RDS (ON) – Ta
Gate threshold voltage
3
10 mA / 4.0 V
Common source
Pulse test
0
50
Ambient temperature
VGS
10
(V)
Common source
VDS = 3 V
ID = 0.1 mA
Vth (V)
ID = 10 mA / VGS = 2.5 V
4
1
8
Vth – Ta
2.0
5
0
−50
6
4
Gate-source voltage
(mA)
6
2
(V)
ID = 10 mA
Common source
Pulse test
2.7 V
3.0 V
0
4.0
RDS (ON) – VGS
5
Drain-source ON-resistance
RDS (ON) (Ω)
VGS
12
6
Drain-source ON-resistance
RDS (ON) (Ω)
3.0
Gate-source voltage
RDS (ON) – ID
0
2.0
100
Ta
1.0
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
1000
IDR
(mA)
Common source
VDS = 3 V
Ta= 25°C
Pulse test
100
Drain reverse current
Forward transfer admittance
IDR – VDS
|Yfs| – ID
1000
⎪Yfs⎪
(mS)
SSM3K15AFU
10
1
100
10
1
Drain current
ID
25 °C
10
Common source
VGS = 0 V
Pulse test
D
Ta =100 °C
1
S
–0.5
–1.0
Drain-source voltage
(mA)
VDS
–1.5
(V)
t – ID
1000
Common source
VDD = 5 V
VGS = 0 to 5 V
Ta = 25 °C
RG = 50Ω
(pF)
(ns)
toff
100
t
tf
10
Switching time
C
Capacitance
IDR
G
−25 °C
0.1
0
1000
C – VDS
100
100
Ciss
Coss
Common source
Ta = 25°C
f = 1 MHz
VGS = 0 V
10
ton
Crss
tr
1
1
0.1
1
10
Drain-source voltage
100
VDS
1
(V)
10
Drain current
100
ID
1000
(mA)
PD – Ta
Power dissipation
PD
(mW)
250
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6 mm2 × 3)
200
150
100
50
0
0
20
40
60
80
100
Ambient temperature
120
Ta
140
160
(°C)
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SSM3K15AFU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
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applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
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except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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