SSM3K15FS_07

SSM3K15FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FS High Speed Switching Applications Analog Switching Applications • • Compact package suitable for high-density mounting Low ON-resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 30 ±20 100 200 100 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2H1B temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 3 Equivalent Circuit 3 DP 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3K15FS Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±16 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 5 V, ID = 10 mA, VGS = 0~5 V Min ⎯ 30 ⎯ 0.8 25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 2.2 4.0 7.8 3.6 8.8 50 180 Max ±1 ⎯ 1 1.5 ⎯ 4.0 7.0 ⎯ ⎯ ⎯ ⎯ ⎯ Unit μA V μA V mS Ω pF pF pF ns Switching Time Test Circuit (a) Test circuit OUT IN 50 Ω RL VDD 0V 10% (b) VIN 5V 90% 5V 0 10 μs (c) VOUT VDD 10% 90% tr ton toff tf VDD = 5 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C VDS (ON) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM3K15FS ID – VDS 250 Common Source 200 10 4 3 Ta = 25°C 100 1000 Common Source VDS = 3 V ID – VGS (mA) (mA) 2.7 150 2.5 100 2.3 50 VGS = 2.1 V 0 0 0.5 1 1.5 2 Ta = 100°C 10 25°C 1 −25°C Drain current ID Drain current ID 0.1 0.01 0 1 2 3 4 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) –ID 10 Common Source Ta = 25°C 8 5 6 RDS (ON) – VGS Common Source ID = 10 mA Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) 4 Ta = 100°C 25°C 2 −25°C 1 6 VGS = 2.5 V 3 4 4V 2 0 0 40 80 120 160 200 0 0 2 4 6 8 10 Drain current ID (mA) Gate-Source voltage VGS (V) RDS (ON) – Ta 8 7 Common Source ID = 10 mA 2 1.8 Common Source ID = 0.1 mA VDS = 3 V Vth – Ta Vth (V) Gate threshold voltage VGS = 2.5 V 4V 0 25 50 75 100 125 150 Drain-Source on resistance RDS (ON) (Ω) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 6 5 4 3 2 1 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2007-11-01 SSM3K15FS ⎪Yfs⎪ – ID 1000 250 Common Source 500 V DS = 3 V 300 Ta = 25°C Common Source VGS = 0 V Ta = 25°C D 150 IDR – VDS Drain reverse current IDR (mA) Forward transfer admittance |Yfs| (mS) 200 100 50 30 G S IDR 100 10 5 3 50 1 1 10 100 1000 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 Drain current ID (mA) Drain-Source voltage VDS (V) t – ID 10000 5000 3000 toff Common Source VDD = 5 V VGS = 0~5 V Ta = 25°C 10000 5000 3000 toff t – ID Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C Switching time t (ns) 1000 500 300 Switching time t (ns) tf 1000 500 300 ton 100 50 30 tr tf 100 50 30 ton tr 10 0.1 1 10 100 10 0.1 1 10 100 Drain current ID (mA) Drain current ID (mA) C – VDS 100 50 30 PD – Ta Drain power dissipation PD (mW) 100 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 250 200 (pF) 10 5 3 Ciss Coss Crss Capacitance C 150 100 1 0.5 0.3 50 0.1 0.1 1 10 0 0 20 40 60 80 100 120 140 160 Drain-Source voltage VDS (V) Ambient temperature Ta (°C) 4 2007-11-01 SSM3K15FS RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01