SSM3K301T(TE85L,F)

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Unit: mm Unit: mm Ron = 110 mΩ (max) (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V) Ron = 56 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 12 V DC ID 3.5 Pulse IDP 7.0 PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation /Package A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-3S1A absolute maximum ratings. Weight: 10 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = −12 V 12 ⎯ ⎯ VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA V Drain cutoff current IDSS Gate leakage current IGSS VGS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V S Gate threshold voltage Forward transfer admittance Drain-Source ON-resistance ⏐Yfs⏐ RDS (ON) VDS = 3 V, ID = 2.0 A (Note 2) 6 10 ⎯ ID = 2.0 A, VGS = 4.0 V (Note 2) ⎯ 44 56 ID = 1.0 A, VGS = 2.5 V (Note 2) ⎯ 53 74 ID = 0.5 A, VGS = 1.8 V (Note 2) ⎯ 70 110 ⎯ 320 ⎯ ⎯ 62 ⎯ Crss ⎯ 51 ⎯ Total Gate Charge Qg ⎯ 4.8 ⎯ Gate-Source Charge Qgs ⎯ 3.3 ⎯ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance VDS = 10 V, IDS= 3.5 A, VGS = 4 V Qgd ⎯ 1.5 ⎯ Turn-on time ton ⎯ 18 ⎯ Turn-off time toff ⎯ 14 ⎯ ⎯ −0.85 −1.2 Gate-Drain Charge Switching time VDS = 10 V, VGS = 0, f = 1 MHz Drain-Source forward voltage VDSF VDD = 10 V, ID = 2 A, VGS = 0 to 2.5 V, RG = 4.7 Ω ID = −3.5 A, VGS = 0 V Note 2: Pulse test (Note 2) mΩ pF nC ns V Start of commercial production 2006-09 1 2014-03-01 SSM3K301T Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 μs (c) VOUT VDD VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking 10% VDD VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 3 3 KK4 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 SSM3K301T ID - VDS 6 10 1.8 4.0 2.5 1 Drain Current ID (A) Drain Current ID (A) 5 1.5 4 3 2 VGS = 1.2 V 1 25 °C 0.01 -25 °C Common Source VDS = 3 V 0.0001 0 0.2 0.4 0.6 0.8 Drain-Source Voltage VDS (V) 1 0 RDS(ON) - VGS 200 Drain-Source ON-Resistance RDS(ON) (mΩ) 160 140 120 100 1A 80 60 ID = 0.5 A 40 1 Gate-Source Voltage VGS (V) 2A 20 0 120 2 RDS(ON) - Ta 140 Common Source Ta = 25 °C 180 Drain-Source ON-Resistance RDS(ON) (mΩ) Ta = 85 °C 0.1 0.001 Common Source Ta = 25 °C 0 Common Source 100 1.8 V , 0.5 A 80 2.5 V , 1 A 60 VGS = 4 V , ID = 2 A 40 20 0 0 1 2 3 4 5 6 7 8 Gate-Source Voltage VGS (V) 9 10 -60 -40 -20 0 Vth - Ta 1 Common Source ID = 1 mA VDS = 3 V Gate Threshold Voltage Vth (V) 120 100 80 1.8 V 60 2.5 V VGS = 4 V 40 Common Source Ta = 25 °C 20 0 0 1 2 3 4 20 40 60 80 100 120 140 160 Ambient Temperature Ta (℃) RDS(ON) - ID 140 Drain-Source ON-Resistance RDS(ON) (mΩ) ID - VGS 10 5 0.8 0.6 0.4 0.2 0 6 -60 -40 -20 Drain Current ID (A) 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta (°C) 3 2014-03-01 SSM3K301T |Yfs| - ID -25 °C 25 °C |Yfs| (S) IDR - VDS 10 Drain Reverse Current IDR (A) 10.0 Ta = 85 °C 1.0 Common Source VDS = 3 V Ta = 25 °C 0.1 Common Source VGS = 0 V Ta = 25 °C 1 D G IDR 0.1 S Ta = 85 °C 0.01 1 10 0 C - VDS 1000 -0.2 -0.4 -0.6 -0.8 Drain-Source Voltage VDS (V) Switching Time t (ns) Coss Crss Common Source VGS = 0 V f = 1 MHz Ta = 25 °C 100 tf 10 ton tr 10 0.1 1 10 1 0.01 100 0.1 1 Drain Current ID (A) Drain-Source Voltage VDS (V) Dynamic Input PD -Characteristic Ta ID = 3.5A bTa = 25°C 8008 VGS (V) Common Source 1000 a: Mounted on an FR4 board (25.4 mm x 25.4 mm x 1.6 mm) Cu Pad: 25.4 mm x 25.4 mm) b: Mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm) Cu Pad: 25.4 mm x 25.4 mm 6006 a 4004 VDD=10V VDD=16V 200 2 00 00 460 10 Rth - tw Transient Thermal Impedance Rth (°C/W) 100010 Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C toff 100 -1 t - ID 1000 Ciss Gate–Source voltage -25 °C 0.1 Drain Current ID (A) Capacitance C (pF) 25 °C 0.001 0.01 Drain Power Dissipation PD (mW) Forward Transfer Admittance 100.0 1008 20 40 80 120 140 Ambient Temperature Ta (°C) Total Gate Charge Qg (nC) c 4 Single pulse a: Mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm) Cu Pad: 25.4 mm x 25.4 mm) b: Mounted on an FR4 board (25.4 mm x 25.4 mm x 1.6 mm) Cu Pad: 25.4 mm x 25.4 mm) c: Mounted on an FR4 board (25.4 mm x 25.4 mm x 1.6 mm) Cu Pad: 0.45 mm x 0.8 mm x 3 10 1 0.001 12 160 b a 100 0.01 0.1 1 10 Pulse Width tw (S) 100 1000 2014-03-01 SSM3K301T rth – tw PD – Ta Drain power dissipation PD (mW) Transient thermal impedance Rth (°C/W) 1000 b 100 a Single Pulse 10 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 0.8 mm2×3) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 800 a 600 400 b 200 0 -40 1000 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , 2 Cu Pad : 0.8 mm ×3) -20 0 20 40 60 80 Ambient temperature (s) 5 100 120 140 160 Ta (°C) 2014-03-01 SSM3K301T RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 6 2014-03-01