SSM3K302T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K302T
Power Management Switch Applications
High Speed Switching Applications
•
1.8 V drive
•
Low ON-resistance:
Unit: mm
Ron = 131 mΩ (max) (@VGS = 1.8V)
Ron =
87 mΩ (max) (@VGS = 2.5V)
Ron =
71 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C)
Symbol
Rating
Unit
Drain–source voltage
Characteristic
VDS
30
V
Gate–source voltage
VGSS
± 12
V
DC
ID
3.0
Pulse
IDP
6.0
Drain current
Drain power dissipation
A
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
JEDEC
―
etc.) may cause this product to decrease in the reliability significantly
JEITA
―
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
TOSHIBA
2-3S1A
Please design the appropriate reliability upon reviewing the Toshiba
Weight: 10 mg (typ.)
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain–source breakdown voltage
Min
Typ.
Max
Unit
V (BR) DSS
Symbol
ID = 1 mA, VGS = 0
Test Condition
30
⎯
⎯
V
V (BR) DSX
ID = 1 mA, VGS = –12 V
18
⎯
⎯
V
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ± 12 V, VDS = 0
⎯
⎯
±1
μA
Gate threshold voltage
Vth
Forward transfer admittance
⏐Yfs⏐
Drain–source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Switching time
VDS = 3 V, ID = 1 mA
0.4
⎯
1.0
V
VDS = 3 V, ID = 2 A
(Note2)
3.8
7.7
⎯
S
ID = 2.0 A, VGS = 4.0 V
(Note2)
⎯
52
71
ID = 1.0 A, VGS = 2.5 V
(Note2)
⎯
64
87
ID = 0.5 A, VGS = 1.8 V
(Note2)
⎯
81
131
⎯
270
⎯
⎯
56
⎯
⎯
47
⎯
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
4.3
⎯
VDS = 15 V, IDS= 3.0 A, VGS = 4 V
⎯
2.8
⎯
⎯
1.5
⎯
Turn-on time
ton
VDD = 10 V, ID = 2 A,
⎯
20
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
⎯
31
⎯
⎯
– 0.85
– 1.2
Drain–source forward voltage
VDSF
ID = − 3.0 A, VGS = 0 V
Note2: Pulse test
(Note2)
mΩ
pF
nC
ns
V
Start of commercial production
2006-09
1
2014-03-01
SSM3K302T
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
OUT
2.5 V
90%
IN
0V
RG
0
10 μs
VDD = 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
VDD
(c) VOUT
VDD
10%
VDS (ON)
10%
90%
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
KKA
1
2
1
2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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2014-03-01
SSM3K302T
ID – VDS
ID – VGS
5
10
4.0 V 2.5 V
Common Source
ID
1.8 V
1
3
0.1
Drain current
Drain current
VDS = 3 V
(A)
4
ID
(A)
10 V
2
VGS = 1.5 V
Ta = 100 °C
0.01
1
25 °C
− 25 °C
0.001
Common Source
Ta = 25°C
0
0
0.2
0.4
0.8
0.6
Drain–source voltage
VDS
0.0001
0
1
(V)
1.0
Gate–source voltage
RDS (ON) – VGS
ID = 0.5 A
Common Source
Common Source
Ta = 25°C
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
(V)
200
Ta = 25°C
150
100
Ta = 100 °C
25 °C
50
− 25 °C
0
2
6
4
Gate–source voltage
8
VGS
150
100
1.8 V
2.5 V
50
0
10
VGS = 4.0 V
0
1
(V)
3
2
Drain current
RDS (ON) – Ta
4
ID
5
(A)
Vth – Ta
1.0
300
Vth (V)
Common Source
250
200
Gate threshold voltage
Drain–source on-resistance
RDS (ON) (mΩ)
VGS
RDS (ON) – ID
200
0
2.0
0.5 A / 1.8 V
150
1.0 A / 2.5 V
100
ID = 2.0 A / VGS = 4.0 V
50
0
−50
0
50
Ambient temperature
100
Ta
0.5
Common source
VDS = 3 V
ID = 1 mA
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
SSM3K302T
IDR – VDS
|Yfs| – ID
10
10
VGS = 0 V
(A)
IDR
3
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
(S)
Common Source
1
0.3
Common Source
VDS = 3 V
Ta = 25°C
0.1
0.01
1
0.1
Drain current
ID
Ta = 25°C
1
IDR
G
S
0.1
Ta =100 °C
25 °C
0.01
−25 °C
0.001
0
10
D
–0.2
(A)
–0.4
Drain–source voltage
VDS
–1.0
(V)
1000
500
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25°C
RG = 4.7 Ω
(ns)
toff
300
100
tf
t
Ciss
Switching time
C
(pF)
–0.8
t – ID
C – VDS
1000
Capacitance
–0.6
100
50
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
30
10
0.1
Coss
Crss
10
ton
tr
1
10
Drain–source voltage
1
0.01
100
VDS
(V)
0.1
Drain current
1
ID
10
(A)
Dynamic Input Characteristic
10
ID = 3 A
8
Ta = 25°C
Gate–Source voltage
VGS
(V)
Common Source
6
VDD=15V
VDD=24V
4
2
0
0
4
Total Gate Charge
8
Qg
12
(nC)
4
2014-03-01
SSM3K302T
rth – tw
PD – Ta
Drain power dissipation PD (mW)
Transient thermal impedance Rth (°C/W)
1000
b
100
a
Single Pulse
10
a: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 0.8 mm2×3)
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
800
a
600
400
b
200
0
-40
1000
a: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm
× 1.6t ,
2
Cu Pad : 0.8 mm ×3)
-20
0
20
40
60
80
Ambient temperature
(s)
5
100 120 140 160
Ta
(°C)
2014-03-01
SSM3K302T
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
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except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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