SSM3K302T(TE85L,F)

SSM3K302T(TE85L,F)

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    SOT-23

  • 描述:

    MOSFET N-CH 30V 3A TSM

  • 数据手册
  • 价格&库存
SSM3K302T(TE85L,F) 数据手册
SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ (max) (@VGS = 1.8V) Ron = 87 mΩ (max) (@VGS = 2.5V) Ron = 71 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25°C) Symbol Rating Unit Drain–source voltage Characteristic VDS 30 V Gate–source voltage VGSS ± 12 V DC ID 3.0 Pulse IDP 6.0 Drain current Drain power dissipation A PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, JEDEC ― etc.) may cause this product to decrease in the reliability significantly JEITA ― even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. TOSHIBA 2-3S1A Please design the appropriate reliability upon reviewing the Toshiba Weight: 10 mg (typ.) Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Min Typ. Max Unit V (BR) DSS Symbol ID = 1 mA, VGS = 0 Test Condition 30 ⎯ ⎯ V V (BR) DSX ID = 1 mA, VGS = –12 V 18 ⎯ ⎯ V Drain cutoff current IDSS VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ± 12 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth Forward transfer admittance ⏐Yfs⏐ Drain–source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V VDS = 3 V, ID = 2 A (Note2) 3.8 7.7 ⎯ S ID = 2.0 A, VGS = 4.0 V (Note2) ⎯ 52 71 ID = 1.0 A, VGS = 2.5 V (Note2) ⎯ 64 87 ID = 0.5 A, VGS = 1.8 V (Note2) ⎯ 81 131 ⎯ 270 ⎯ ⎯ 56 ⎯ ⎯ 47 ⎯ VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 4.3 ⎯ VDS = 15 V, IDS= 3.0 A, VGS = 4 V ⎯ 2.8 ⎯ ⎯ 1.5 ⎯ Turn-on time ton VDD = 10 V, ID = 2 A, ⎯ 20 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 31 ⎯ ⎯ – 0.85 – 1.2 Drain–source forward voltage VDSF ID = − 3.0 A, VGS = 0 V Note2: Pulse test (Note2) mΩ pF nC ns V Start of commercial production 2006-09 1 2014-03-01 SSM3K302T Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 μs VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking VDD (c) VOUT VDD 10% VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 3 3 KKA 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 SSM3K302T ID – VDS ID – VGS 5 10 4.0 V 2.5 V Common Source ID 1.8 V 1 3 0.1 Drain current Drain current VDS = 3 V (A) 4 ID (A) 10 V 2 VGS = 1.5 V Ta = 100 °C 0.01 1 25 °C − 25 °C 0.001 Common Source Ta = 25°C 0 0 0.2 0.4 0.8 0.6 Drain–source voltage VDS 0.0001 0 1 (V) 1.0 Gate–source voltage RDS (ON) – VGS ID = 0.5 A Common Source Common Source Ta = 25°C Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) (V) 200 Ta = 25°C 150 100 Ta = 100 °C 25 °C 50 − 25 °C 0 2 6 4 Gate–source voltage 8 VGS 150 100 1.8 V 2.5 V 50 0 10 VGS = 4.0 V 0 1 (V) 3 2 Drain current RDS (ON) – Ta 4 ID 5 (A) Vth – Ta 1.0 300 Vth (V) Common Source 250 200 Gate threshold voltage Drain–source on-resistance RDS (ON) (mΩ) VGS RDS (ON) – ID 200 0 2.0 0.5 A / 1.8 V 150 1.0 A / 2.5 V 100 ID = 2.0 A / VGS = 4.0 V 50 0 −50 0 50 Ambient temperature 100 Ta 0.5 Common source VDS = 3 V ID = 1 mA 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2014-03-01 SSM3K302T IDR – VDS |Yfs| – ID 10 10 VGS = 0 V (A) IDR 3 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (S) Common Source 1 0.3 Common Source VDS = 3 V Ta = 25°C 0.1 0.01 1 0.1 Drain current ID Ta = 25°C 1 IDR G S 0.1 Ta =100 °C 25 °C 0.01 −25 °C 0.001 0 10 D –0.2 (A) –0.4 Drain–source voltage VDS –1.0 (V) 1000 500 Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25°C RG = 4.7 Ω (ns) toff 300 100 tf t Ciss Switching time C (pF) –0.8 t – ID C – VDS 1000 Capacitance –0.6 100 50 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 30 10 0.1 Coss Crss 10 ton tr 1 10 Drain–source voltage 1 0.01 100 VDS (V) 0.1 Drain current 1 ID 10 (A) Dynamic Input Characteristic 10 ID = 3 A 8 Ta = 25°C Gate–Source voltage VGS (V) Common Source 6 VDD=15V VDD=24V 4 2 0 0 4 Total Gate Charge 8 Qg 12 (nC) 4 2014-03-01 SSM3K302T rth – tw PD – Ta Drain power dissipation PD (mW) Transient thermal impedance Rth (°C/W) 1000 b 100 a Single Pulse 10 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 0.8 mm2×3) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 800 a 600 400 b 200 0 -40 1000 a: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , 2 Cu Pad : 0.8 mm ×3) -20 0 20 40 60 80 Ambient temperature (s) 5 100 120 140 160 Ta (°C) 2014-03-01 SSM3K302T RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 6 2014-03-01
SSM3K302T(TE85L,F) 价格&库存

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