SSM3K315T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K315T
○ High-Speed Switching Applications
4.5-V drive
Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V)
: Ron = 27.6 mΩ (max) (@VGS = 10 V)
Unit: mm
+0.2
2.8-0.3
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
±20
V
ID
(Note 1)
6.0
Pulse
IDP (Note 1)
12.0
PD (Note 1)
700
t = 10 s
1250
Drain power dissipation
2
3
A
0.15
DC
1
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
0~0.1
Drain current
0.95
Unit
1.9±0.2
Rating
0.95
Symbol
0.7±0.05
Characteristic
2.9±0.2
Absolute Maximum Ratings (Ta = 25°C)
0.4±0.1
+0.2
1.6-0.1
0.16±0.05
•
•
1: Gate
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
2: Source
3: Drain
TSM
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = -20 V
15
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ± 20 V, VDS = 0 V
⎯
⎯
±0.1
μA
VDS = 5 V, ID = 1 mA
1.3
⎯
2.5
V
S
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Vth
⏐Yfs⏐
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
(Note 3)
11.5
23.0
⎯
(Note 3)
⎯
20.5
27.6
ID = 2.0 A, VGS = 4.5 V
(Note 3)
⎯
27.0
41.5
VDS = 15 V, VGS = 0 V, f = 1 MHz
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Switching time
VDS = 5 V, ID = 4 A
ID = 4.0 A, VGS = 10 V
Turn-on time
Turn-off time
Drain-Source forward voltage
VDS = 15 V, ID =6.0 A, VGS = 10 V
⎯
450
⎯
⎯
120
⎯
⎯
77
⎯
⎯
10.1
⎯
⎯
7.6
⎯
⎯
2.5
⎯
ton
VDD = 15 V, ID = 2.0 A,
⎯
21
⎯
toff
VGS = 0 to 4.5 V, RG = 10 Ω
⎯
15
⎯
⎯
-0.85
-1.2
VDSF
ID = -6.0 A, VGS = 0 V
Note 3: Pulse test
(Note 3)
mΩ
pF
nC
ns
V
Start of commercial production
2008-09
1
2014-03-01
SSM3K315T
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
OUT
4.5 V
0V
IN
(c) VOUT
RG
0
10 μs
VDD
90%
10%
VDD
VDS (ON)
VDD = 15 V
RG = 10 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
4.5 V
10%
90%
tr
ton
tf
toff
Equivalent Circuit (top view)
3
3
KDS
1
2
1
2
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Usage Consideration
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1 mA for the
SSM3K315T). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device
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2014-03-01
SSM3K315T
ID – VGS
ID – VDS
12
10 V
100
4.0 V
3.5 V
4.5 V
ID
(A)
8
6
Drain current
ID
Drain current
10
(A)
10
VGS = 3.0 V
4
1
0.1
Ta = 100 °C
0.01
2
0
Common Source
VDS = 5 V
25 °C
− 25 °C
0.001
Common Source
Ta = 25 °C
0
0.4
0.2
0.6
0.8
Drain–source voltage
VDS
0.0001
0
1.0
2.0
(V)
ID =4.0 A
Common Source
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
100
50
25 °C
Ta = 100 °C
0
10
Gate–source voltage
50
4.5 V
VGS = 10 V
0
20
VGS
0
(V)
2
4
8
ID
2.0
2.0 A / 4.5 V
ID = 4.0 A / VGS = 10 V
0
50
Ambient temperature
12.
Common Source
VDS = 5 V
ID = 1 mA
Vth (V)
Common Source
50
0
−50
10
(A)
Vth – Ta
Gate threshold voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
6
Drain current
RDS (ON) – Ta
100
(V)
Common Source
Ta = 25°C
− 25 °C
0
VGS
RDS (ON) – ID
RDS (ON) – VGS
100
4.0
Gate–source voltage
100
Ta
1.0
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
SSM3K315T
IDR – VDS
100
10
IDR
(A)
Common Source
VDS = 5 V
Ta = 25 °C
3
Drain reverse current
(S)
30
Forward transfer admittance
⎪Yfs⎪
|Yfs| – ID
100
1
0.3
0.1
0.03
0.01
0.001
0.1
1
Drain current
ID
0.01
D
10
IDR
G
1
S
−25 °C
0.1
100 °C
-0.2
(A)
-0.4
-0.6
Drain–source voltage
C – VDS
1000
25 °C
0.01
0.001
0
100
10
Common Source
VGS = 0 V
-0.8
VDS
-1.2
(V)
t – ID
1000
Common Source
VDD = 15 V
VGS = 0 to 4.5 V
Ta = 25 °C
RG = 10 Ω
toff
tf
(ns)
Ciss
(pF)
-1.0
300
100
Switching time
Capacitance
C
t
100
Coss
Crss
30
10
0.1
Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
1
10
Drain–source voltage
tr
1
0.01
100
VDS
ton
10
0.1
(V)
10
1
Drain current
ID
100
(A)
Dynamic Input Characteristic
Common Source
ID = 6.0A
Ta = 25°C
8
VGS
(V)
10
Gate–source voltage
6
VDD=15 V
VDD=24 V
4
2
0
0
5
Total Gate Charge
15
10
Qg
(nC)
4
2014-03-01
SSM3K315T
Rth
– tw
PD – Ta
1000
Drain power dissipation PD (mW)
Transient thermal impedance Rth (°C/W)
1000
b
100
a
10
1
0.001
a: Mounted on FR4 Board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 645 mm2)
b: Mounted on FR4 Board
(25.4mm × 25.4mm
× 1.6mm ,
2
Cu Pad : 0.8 mm ×3)
0.01
0.1
1
Pulse width
10
tw
100
800
a
600
400
(s)
b
200
0
-40
1000
a: Mounted on FR4 Board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 645 mm2)
b: Mounted on FR4 Board
(25.4mm × 25.4mm
× 1.6mm ,
Cu Pad : 0.8 mm2×3)
-20
0
20
40
60
80
Ambient temperature
5
100
120 140 160
Ta
(°C)
2014-03-01
SSM3K315T
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
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TOSHIBA sales representative.
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
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except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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