SSM3K329R
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K329R
○ Power Management Switch Applications
○ High-Speed Switching Applications
Unit: mm
•
1.8-V drive
•
Low ON-resistance: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V)
: RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)
: RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±12
V
DC
ID (Note 1)
3.5
Pulse
IDP (Note 1)
7.0
Drain current
Power dissipation
PD (Note 2)
t = 10s
1
2
1: Gate
A
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
SOT-23F
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-3Z1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 11 mg (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
Start of commercial production
2010-02
1
2014-03-01
SSM3K329R
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
V (BR) DSS
ID = 1 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = −12 V
18
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ± 12 V, VDS = 0 V
⎯
⎯
±1
μA
Vth
VDS = 3 V, ID = 1 mA
0.4
⎯
1.0
V
Forward transfer admittance
⏐Yfs⏐
VDS = 3 V, ID = 1.0 A
(Note 3)
2.1
4.2
⎯
S
ID = 1.0 A, VGS = 4.0 V
(Note 3)
⎯
96
126
Drain–source ON-resistance
RDS (ON)
ID = 0.8 A, VGS = 2.5 V
(Note 3)
⎯
118
170
ID = 0.5 A, VGS = 1.8 V
(Note 3)
⎯
158
289
⎯
123
⎯
⎯
43
⎯
Gate threshold voltage
Input capacitance
Ciss
VDS = 15V, VGS = 0 V, f = 1 MHz
Output capacitance
Coss
Reverse transfer capacitance
Crss
⎯
18
⎯
Qg
⎯
1.5
⎯
⎯
0.3
⎯
⎯
0.6
⎯
⎯
9.2
⎯
⎯
6.4
⎯
⎯
-0.90
-1.2
Total gate charge
Gate-source charge
Qgs1
Gate-drain charge
Qgd
Switching time
Turn-on time
ton
Turn-off time
toff
Drain-source forward voltage
VDSF
VDS = 15V, ID = 2.0 A
VGS = 4 V
VDD = 15 V, ID = 1.0 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω
ID = -3.5 A, VGS = 0 V
(Note 3)
mΩ
pF
nC
ns
V
Note 3: Pulse test
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2014-03-01
SSM3K329R
Switching Time Test Circuit
(a) Test Circuit
2.5 V
(b) VIN
OUT
0
10 μs
RG
IN
VDD = 15 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
2.5 V
0V
90%
10%
VDD
90%
(c) VOUT
VDD
10%
VDS (ON)
tr
ton
Marking
tf
toff
Equivalent Circuit (top view)
3
3
KKH
1
2
1
2
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the
SSM3K329R). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
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2014-03-01
SSM3K329R
ID – VDS
7
Common Source
Ta = 25 °C
Pulse test
10 V
2.5 V
(A)
VGS = 1.8 V
Drain current
Drain current
Common Source
VDS = 3 V
Pulse test
4.0 V
5
1
ID
ID
(A)
6
ID – VGS
10
4
3
2
0.1
25 °C
Ta = 100 °C
0.01
− 25 °C
1
0
0
0.2
0.4
0.6
0.8
Drain–source voltage
VDS
0.001
0
1.0
(V)
1.0
Gate–source voltage
RDS (ON) – VGS
ID =1.0A
Common Source
Common Source
Ta = 25°C
Pulse test
300
200
25 °C
Ta = 100 °C
100
− 25 °C
0
2
4
8
6
Gate–source voltage
10
VGS
Pulse test
1.5 V
300
1.8 V
200
2.5 V
100
0
12
VGS = 4.0V
0
(V)
1
2
3
4
Drain current
RDS (ON) – Ta
ID
7
(A)
Common Source
Vth (V)
Pulse test
300
Gate threshold voltage
ID = 0.5 A / VGS = 1.8 V
0.8 A / 2.5 V
1.0 A / 4.0 V
100
0
−50
6
1.0
Common Source
200
5
Vth – Ta
400
Drain–source ON-resistance
RDS (ON) (mΩ)
(V)
RDS (ON) – ID
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
VGS
400
400
0
2.0
0
50
Ambient temperature
100
Ta
VDS = 3 V
ID = 1 mA
0.5
0
−50
150
(°C)
0
50
Ambient temperature
4
100
Ta
150
(°C)
2014-03-01
SSM3K329R
(S)
10
Common Source
VDS = 3 V
(A)
Ta = 25°C
1
1
IDR
Pulse test
25 °C
Drain current
⎪Yfs⎪
Forward transfer admittance
IDR – VDS
|Yfs| – ID
10
0.1
0.01
0.1
Common Source
VGS = 0 V
Pulse test
Ta =100 °C
D
0.01
−25 °C
0.001
0.001
0.1
0.01
Drain current
1
ID
S
0.001
0
10
–0.5
(A)
–1.0
Drain–source voltage
C – VDS
VDS
50
30
Coss
10
Crss
Common Source
5
Ta = 25°C
f = 1 MHz
VGS = 0 V
3
toff
(ns)
t
Switching time
(pF)
C
Ciss
100
100
10
(V)
Common Source
VDD = 15 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
500
300
–1.5
t – ID
1000
1000
Capacitance
IDR
G
tf
ton
tr
1
0.1
1
10
Drain–source voltage
1
0.01
100
VDS
(V)
0.1
Drain current
1
ID
10
(A)
Dynamic Input Characteristic
10
Common Source
(V)
ID = 2.0 A
Ta = 25°C
Gate–source voltage
VGS
8
6
VDD = 15 V
VDD = 24 V
4
2
0
0
1
2
Total Gate Charge
3
Qg
4
(nC)
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2014-03-01
SSM3K329R
rth
– tw
PD – Ta
1600 a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6 mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6 mm , Cu Pad : 0.72 mm2 ×3)
(mW)
b
a
1200
a
PD
100
Power dissipation
Transient thermal impedance
rth (°C/W )
1000
10
Single pulse
a. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm2×3)
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
800
400
0
-40
1000
b
-20
0
20
40
60
80
Ambient temperature
(s)
6
100
Ta
120
140
160
(°C)
2014-03-01
SSM3K329R
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
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TOSHIBA sales representative.
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any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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