SSM3K341R,LXHF

SSM3K341R MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM3K341R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 � MOSFET (3) 4.0 V drive (4) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 43 mΩ (typ.) (@VGS = 4 V) 3. Packaging and Pin Assignment 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number SSM3K341R,LF AEC-Q101 Note � SSM3K341R,LXGF YES SSM3K341R,LXHF YES General Use (Note 1) Unintended Use (Note 1) Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2016-01 ©2016-2021 Toshiba Electronic Devices & Storage Corporation 1 2021-02-03 Rev.8.0 SSM3K341R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �) Characteristics Symbol Rating Unit V Drain-source voltage VDSS 60 Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (t = 10 s) Single-pulse avalanche energy (Note 1) ID 6 (Note 1), (Note 2) IDP 24 (Note 3) PD 1.2 (Note 3) PD 2.4 (Note 4) EAS 28.9 mJ IAR 6 A � Avalanche current A W Channel temperature (Note 5) Tch 175 Storage temperature (Note 5) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 175 �. Note 2: pulse width ≤ 1 ms, Duty ≤ 1 % Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note 4: VDD = 25 V, Tch = 25 � (Initial state), L = 1 mH, RG = 25 Ω Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: Note: Note: This transistor is sensitive to electrostatic discharge and should be handled with care. The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. ©2016-2021 Toshiba Electronic Devices & Storage Corporation 2 2021-02-03 Rev.8.0 SSM3K341R 6. Electrical Characteristics 6.1. Static Characteristics (Unless otherwise specified, T a = 25 �) Characteristics Symbol Gate leakage current Drain cut-off current Drain-source breakdown voltage Test Condition Min Typ. Max Unit � � ±10 µA IGSS VGS = ±16 V IDSS VDS = 60 V � � 1 V(BR)DSS ID = 10 mA, VGS = 0 V 60 � � Drain-source breakdown voltage (Note 1) V(BR)DSX ID = 10 mA, VGS = -20 V 40 � � Gate threshold voltage (Note 2) 1.5 � 2.5 Drain-source on-resistance (Note 3) Vth VDS = 10 V, ID = 0.1 mA RDS(ON) ID = 2 A, VGS = 4 V � 43 69 ID = 3 A, VGS = 4.5 V � 36 51 ID = 5 A, VGS = 10 V � 28 36 V mΩ Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (0.1 mA for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON). Take this into consideration when using the device. Note 3: Pulse measurement. 6.2. Dynamic Characteristics (Unless otherwise specified, T a = 25 �) Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time (rise time) tr Switching time (turn-on time) ton Switching time (fall time) Switching time (turn-off time) tf toff Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 30 V, ID = 3 A, VGS = 0 to 4.5 V, RG = 50 Ω Duty ≤ 1 %,Input: tr, tf < 5 ns, Common source, See Chapter 6.3. Min Typ. Max Unit � 550 � pF � 35 � � 300 � � 48 � � 63 � � 6 � � 18 � ns 6.3. Switching Time Test Circuit Fig. 6.3.1 Switching Time Test Circuit Fig. 6.3.2 Input Waveform/Output Waveform 6.4. Gate Charge Characteristics (Unless otherwise specified, T a = 25 �) Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Gate-source charge 1 Qgs1 Gate-drain charge Qgd ©2016-2021 Toshiba Electronic Devices & Storage Corporation Test Condition VDD = 48 V, ID = 2 A, VGS = 10 V 3 Min Typ. Max Unit � 9.3 � nC � 1.8 � � 2.0 � 2021-02-03 Rev.8.0 SSM3K341R 6.5. Source-Drain Characteristics (Unless otherwise specified, T a = 25 �) Characteristics Diode forward voltage Symbol (Note 1) VDSF Test Condition ID = -6 A, VGS = 0 V Min Typ. Max Unit � -0.9 -1.5 V Note 1: Pulse measurement. 7. Marking Fig. 7.1 ©2016-2021 Toshiba Electronic Devices & Storage Corporation 4 Marking 2021-02-03 Rev.8.0 SSM3K341R 8. Characteristics Curves (Note) Fig. 8.1 Fig. 8.3 Fig. 8.5 I D - V DS Fig. 8.2 R DS(ON) - V GS Fig. 8.4 R DS(ON) - T a ©2016-2021 Toshiba Electronic Devices & Storage Corporation I D - V GS R DS(ON) - I D Fig. 8.6 5 V th - T a 2021-02-03 Rev.8.0 SSM3K341R Fig. 8.7 I DR - V DS Fig. 8.9 Fig. 8.11 Fig. 8.8 t - ID Fig. 8.10 Safe Operating Area ©2016-2021 Toshiba Electronic Devices & Storage Corporation Dynamic Input Characteristics Fig. 8.12 6 C - V DS r th - t w 2021-02-03 Rev.8.0 SSM3K341R Fig. 8.13 Note: PD - Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016-2021 Toshiba Electronic Devices & Storage Corporation 7 2021-02-03 Rev.8.0 SSM3K341R Package Dimensions Unit: mm Weight: 0.011 g (typ.) Package Name(s) TOSHIBA: 2-3Z1S Nickname: SOT-23F ©2016-2021 Toshiba Electronic Devices & Storage Corporation 8 2021-02-03 Rev.8.0 SSM3K341R RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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