SSM3K36FS,LF

SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications Unit: mm • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) Absolute Maximum Ratings (Ta = 25 °C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ± 10 V DC ID 500 Pulse IDP 1000 Drain current Drain power dissipation mA PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2H1B temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 2.4 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.36 mm2 × 3) Marking Equivalent Circuit (top view) 3 3 NX 1 2 1 2 Start of commercial production 2008-02 © 2020 Toshiba Electronic Devices & Storage Corporation 1 2020-07-01 SSM3K36FS Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20   V (BR) DSX ID = 1 mA, VGS = - 10 V 12   Drain cutoff current IDSS VDS = 20 V, VGS = 0 V   1 µA Gate leakage current IGSS VGS = ±10 V, VDS = 0 V   ±1 µA 0.35  1.0 V 420 840  mS ID = 200 mA, VGS = 5.0 V (Note 2)  0.46 0.63 ID = 200 mA, VGS = 4.5 V (Note 2)  0.51 0.66 ID = 200 mA, VGS = 2.5 V (Note 2)  0.66 0.85 ID = 100 mA, VGS = 1.8 V (Note 2)  0.81 1.14 ID = 50 mA, VGS = 1.5 V  0.95 1.52  46   10.8   7.3   1.23   0.60   0.63  Drain-source breakdown voltage Gate threshold voltage Vth VDS = 3 V, ID = 1 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 200 mA Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain Charge Qgd Switching time Turn-on time ton Turn-off time toff Drain-source forward voltage VDSF (Note 2) (Note 2) VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 0.5 A VGS = 4.0 V VDD = 10 V, ID = 200 mA VGS = 0 to 2.5 V, RG = 50 Ω  30   75  ID = -0.5 A, VGS = 0 V  -0.88 -1.2 (Note 2) V Ω pF nC ns V Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit 2.5 V OUT 10 µs RG IN 0 (b) VIN VDD = 10 V RG = 50 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 2.5 V 0V (c) VOUT VDD 90% 10% VDD 90% 10% VDS (ON) tr ton tf toff Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM3K36FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. © 2020 Toshiba Electronic Devices & Storage Corporation 2 2020-07-01 SSM3K36FS ID – VDS 10 V 2.5 V 1.8 V (mA) 4.5 V 800 Drain current ID ID – VGS 1000 600 Drain current ID (mA) 1000 1.5 V 400 VGS = 1.2 V 200 0 Common Source Ta = 25 °C 0 0.4 0.2 0.6 0.8 Drain-source voltage VDS 100 Ta = 100 °C 10 1 − 25 °C 25 °C 0.1 Common Source VDS = 3 V 0.01 0 1.0 1.0 (V) Gate-source voltage VGS (V) RDS (ON) – VGS RDS (ON) – ID 3 ID = 200mA Common Source Common Source Ta = 25°C Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) 3 2 25 °C 1 Ta = 100 °C − 25 °C 0 0 2 4 6 8 2 0 2.5V 400 200 600 Drain current ID RDS (ON) – Ta 1.5 Gate threshold voltage Vth (V) ID = 50m A / VGS = 1.5 V 100m A / 1.8 V 200m A / 2.5 V 200m A / 4.5 V 200m A / 5.0 V 0.5 0 −50 0 50 800 1000 (mA) Vth – Ta 1.0 Common Source Drain-source ON-resistance RDS (ON) (Ω) 1.8 V VGS = 4.5V 0 10 1.5 V 1 Gate-source voltage VGS (V) 1.0 3.0 2.0 100 VDS = 3 V ID = 1 mA 0.5 0 −50 150 Ambient temperature Ta (°C) Common Source 0 50 100 150 Ambient temperature Ta (°C) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2020 Toshiba Electronic Devices & Storage Corporation 3 2020-07-01 |Yfs| – ID 10000 Common Source (mA) VDS = 3 V 3000 Ta = 25°C 1000 300 100 30 10 100 10 1 IDR – VDS 1000 Drain reverse current IDR Forward transfer admittance Yfs (mS) SSM3K36FS Drain current ID 100 25 °C 10 D 1 −25 °C –1.0 Drain-source voltage VDS C – VDS (ns) 30 10 Switching time t Capacitance C (pF) Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω toff Ciss Coss Crss 5 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 tf 100 ton tr 1 10 Drain-source voltage VDS 10 100 1 10 (V) 250 Drain power dissipation PD (mW) ID = 0.5 A Ta = 25°C Gate-source voltage VGS (V) Common Source 6 VDD = 16 V 4 2 0 0 1 Total Gate Charge 2 1000 (mA) P D – Ta 10 VDD = 10 V 100 Drain current ID Dynamic Input Characteristic 8 –1.5 (V) t – ID 1000 50 3 S –0.5 (mA) 100 IDR G 0.1 0 1000 Common Source VGS = 0 V Ta =100 °C 3 (25.4 mm × 25.4 mm × 1.6 mm , Cu Pad : 0.36 mm2 ×3) 200 150 100 50 0 -40 Qg (nC) Mounted on a FR4 board -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2020 Toshiba Electronic Devices & Storage Corporation 4 2020-07-01 SSM3K36FS RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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