SSM3K37CT
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K37CT
○ High Speed Switching Applications
○ Analog Switch Applications
•
1.5Vdrive
•
Low ON-resistance
Unit : mm
RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V)
RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V)
RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V)
RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
20
V
Gate-Source voltage
VGSS
± 10
V
DC
ID
200
Pulse
IDP
400
Drain current
Power dissipation
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
PD(Note1)
mA
CST3
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-1J1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.75mg(typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm )
Marking(top view)
Polarity mark
SU
Pin Condition (top view)
Equivalent Circuit
Polarity mark (on the top)
3
1
1
3
2
2
1. Gate
2. Source
3. Drain
*Electrodes: On the bottom
Start of commercial production
2010-11
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2014-03-01
SSM3K37CT
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = 1 mA, VGS = 0 V
20
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = -10 V
12
⎯
⎯
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±1
μA
Drain-source breakdown voltage
V
Gate threshold voltage
Vth
VDS = 3 V, ID = 1 mA
0.35
⎯
1.0
V
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 100 mA
(Note2)
0.14
0.28
⎯
S
ID = 100 mA, VGS = 4.5 V
(Note2)
⎯
1.65
2.20
ID = 50 mA, VGS = 2.5 V
(Note2)
⎯
2.16
3.02
ID = 20 mA, VGS = 1.8 V
(Note2)
⎯
2.66
4.05
ID = 10 mA, VGS = 1.5 V
(Note2)
⎯
3.07
5.60
⎯
12
⎯
⎯
5.5
⎯
⎯
4.1
⎯
Drain-source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching time
VDS = 10 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
VDD = 10 V, ID = 100 mA
⎯
18
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 50 Ω
⎯
36
⎯
ID = -200 mA, VGS = 0 V
⎯
-0.89
-1.2
Drain-Source forward voltage
VDSF
(Note2)
Ω
pF
ns
V
Note2: Pulse test
Switching Time Test Circuit
(b) VIN
(a) Test Circuit
2.5 V
OUT
0V
10 μs
RG
IN
VDD = 10 V
RG = 50Ω
Duty ≤ 1%
VIN : tr, tf < 5 ns
Common source
Ta = 25°C
2.5 V
0V
(c) VOUT
VDD
90%
10%
VDD
90%
10%
VDS (ON)
tr
ton
tf
toff
Precaution
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the
SSM3K37CT). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
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SSM3K37CT
ID – VDS
2.5 V
10 V
1.8 V
200
1.5 V
VGS = 1.2 V
100
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
100
10
Drain current
Drain current
300
(mA)
4.5 V
ID
400
ID – VGS
1000
Common source
Ta = 25 °C
Pulse test
ID
(mA)
500
Ta = 100 °C
1
− 25 °C
25 °C
0.1
Common source
VDS = 3 V
Pulse test
0.01
0
1.0
1.0
(V)
Gate-source voltage
RDS (ON) – VGS
Drain-source ON-resistance
RDS (ON) (Ω)
Drain-source ON-resistance
RDS (ON) (Ω)
4
25 °C
Ta = 100 °C
2
− 25 °C
1
0
4
2
6
Gate-source voltage
8
VGS
4
1.5 V
1.8 V
3
2.5V
2
VGS = 4.5V
1
0
(V)
100
200
300
Drain current
RDS (ON) – Ta
ID
400
500
(mA)
Vth – Ta
1.0
Common source
Vth (V)
ID = 10 mA / VGS = 1.5 V
20 mA / 1.8 V
4
50 mA / 2.5 V
Gate threshold voltage
Drain-source ON-resistance
RDS (ON) (Ω)
(V)
Common source
Ta = 25°C
Pulse test
5
0
10
5
3
2
100 mA / 4.5 V
1
Common source
Pulse test
0
−50
VGS
6
ID = 100 mA
Common source
Pulse test
5
0
3.0
RDS (ON) – ID
6
3
2.0
0
50
Ambient temperature
100
Ta
VDS = 3 V
ID = 1 mA
0.5
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
IDR – VDS
|Yfs| – ID
1000
1000
IDR
300
(mA)
Common source
VDS = 3 V
Ta = 25°C
Pulse test
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
(mS)
SSM3K37CT
100
30
10
100
10
1
Drain current
ID
100
25 °C
10
1
−25 °C
S
–0.5
–1.0
Drain-source voltage
(mA)
C – VDS
VDS
(ns)
(pF)
50
tf
C
t
100
Ciss
Switching time
Capacitance
(V)
Common source
VDD = 10 V
VGS = 0 to2.5 V
Ta = 25 °C
RG = 50Ω
toff
30
–1.5
t – ID
1000
100
IDR
G
0.1
0
1000
Common source
VGS = 0 V
Pulse test
D
Ta =100 °C
10
Coss
5
3
Common source
Crss
Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
10
Drain-source voltage
tr
1
100
VDS
ton
10
(V)
1
10
Drain current
100
ID
1000
(mA)
PD – Ta
250
Power dissipation PD (mW)
Mounted FR4 board
(10 mm × 10 mm × 1.0mm
2
Cu Pad: 100 mm )
200
150
100
50
0
0
20
40
60
80
100
Ambient temperature
Ta
120
140
160
(°C)
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SSM3K37CT
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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