SSM3K44FS,LF

SSM3K44FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44FS High Speed Switching Applications Analog Switching Applications • • Unit: mm Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V DC ID 100 Pulse IDP 200 Drain current Drain power dissipation (Ta = 25°C) PD (Note 1) mA 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2H1B temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Note 1: mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 0.36mm ×3) Note: Marking Equivalent Circuit 3 3 NT 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2009-12 1 2014-03-01 SSM3K44FS Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±14 V, VDS = 0 V ⎯ ⎯ ±1 μA V (BR) DSS ID = 0.1 mA, VGS = 0 V 30 ⎯ ⎯ V IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.8 ⎯ 1.5 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 10 mA 25 ⎯ ⎯ mS Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 4 V ⎯ 2.2 4.0 ID = 10 mA, VGS = 2.5 V ⎯ 4.0 7.0 ⎯ 8.5 ⎯ ⎯ 5.3 ⎯ ⎯ 9.4 ⎯ Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time VDS = 3 V, VGS = 0 V, f = 1 MHz Turn-on time ton VDD = 5 V, ID = 10 mA, ⎯ 50 ⎯ Turn-off time toff VGS = 0 to 5 V ⎯ 200 ⎯ Ω pF ns Switching Time Test Circuit (a) Test circuit (b) VIN 5V OUT 5V 90% IN 50 Ω 0 10 μs RL VDD 0V (c) VOUT VDD = 5 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (0.1mA for the SSM3K44FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device 2 2014-03-01 SSM3K44FS ID – VDS ID – VGS 250 1000 Common Source VDS = 3 V 100 2.7 150 Drain current ID Drain current ID Common Source Ta = 25°C 3 (mA) 4 (mA) 200 10 2.5 100 2.3 50 Ta = 100°C 10 −25°C 25°C 1 0.1 VGS = 2.1 V 0 0 0.5 1 1.5 Drain-Source voltage 0.01 0 2 1 VDS (V) 2 3 Gate-Source voltage RDS (ON) –ID VGS (V) RDS (ON) – VGS 10 6 Common Source Common Source ID = 10 mA 5 8 Drain-Source ON-resistance RDS (ON) (Ω) Drain-Source ON-resistance RDS (ON) (Ω) Ta = 25°C 6 VGS = 2.5 V 4 4V 2 4 Ta = 100°C 3 25°C 2 −25°C 1 0 0 40 80 120 160 0 0 200 2 Drain current ID (mA) 4 Common Source ID = 10 mA Vth (V) 1.8 6 5 VGS = 2.5 V 4 3 4V 2 1 0 −25 8 10 VGS (V) Vth – Ta 2 Gate threshold voltage Drain-Source ON-resistance RDS (ON) (Ω) 7 6 Gate-Source voltage RDS (ON) – Ta 8 4 1.6 Common Source ID = 0.1 mA VDS = 3 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 0 −25 150 Ambient temperature Ta (°C) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2014-03-01 SSM3K44FS ⎪Yfs⎪ – ID IDR – VDS 1000 250 Drain reverse current IDR (mA) Forward transfer admittance |Yfs| (mS) Common Source 500 V DS = 3 V 300 Ta = 25°C 100 50 30 10 5 3 1 1 10 100 200 Common Source VGS = 0 V Ta = 25°C D 150 S 100 50 0 0 1000 IDR G −0.2 Drain current ID (mA) −0.4 −0.6 Drain-Source voltage t – ID 3000 Switching time t (ns) Switching time t (ns) toff tf 300 100 30 10 0.1 ton toff 500 tf 300 ton 100 50 tr 1 10 10 0.1 100 1 10 PD – Ta 250 30 Drain power dissipation PD (mW) Common Source VGS = 0 V f = 1 MHz Ta = 25°C 50 10 Ciss Coss 5 3 Crss 1 0.5 0.3 1 Drain-Source voltage 100 Drain current ID (mA) C – VDS (pF) (V) 30 tr 100 Capacitance C −1.4 1000 Drain current ID (mA) 0.1 0.1 −1.2 Common Source VDD = 3 V VGS = 0 to 2.5 V Ta = 25°C 5000 500 50 VDS 10000 Common Source VDD = 5 V VGS = 0 to 5 V Ta = 25°C 5000 1000 −1 t – ID 10000 3000 −0.8 10 VDS (V) Cu Pad: 0.36 mm2 ×3) 200 150 100 50 0 0 100 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2014-03-01 SSM3K44FS RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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