SSM3K7002BFU

SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm • • Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.1 Ω (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 60 ± 20 200 800 150 150 −55 to 150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA SC-70 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2E1E operating temperature/current/voltage, etc.) are within the Weight: 6.0 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6mm2 × 3) 0.6 mm 1.0 mm Marking 3 Equivalent Circuit (top view) 3 NM 1 2 1 2 1 2009-11-26 SSM3K7002BFU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on delay time Turn-off delay time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss td(on) td(off) VDSF VDD = 30 V , ID = 200 mA , VGS = 0 to 10 V ID = -200 mA, VGS = 0 V (Note 2) VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ± 20 V, VDS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -10 V VDS = 60 V, VGS = 0 V VDS = 10 V, ID = 0.25 mA VDS = 10 V, ID = 200 mA ID = 500 mA, VGS = 10 V ID = 100 mA, VGS = 5 V ID = 100 mA, VGS = 4.5 V (Note 2) (Note 2) (Note 2) (Note 2) Min ⎯ 60 45 ⎯ 1.5 225 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.62 1.90 2.10 17.0 1.9 3.6 3.3 14.5 -0.84 Max ± 10 ⎯ ⎯ 1 3.1 ⎯ 2.1 2.6 3.3 ⎯ ⎯ ⎯ 6.6 40 -1.2 ns V pF Ω Unit μA V μA V mS Drain-source forward voltage Note2: Pulse test Switching Time Test Circuit (a) Test circuit 10 V 0 10 μs VDD = 30 V Duty ≤ 1% VIN: tr, tf < 2 ns (Zout = 50 Ω) Common Source Ta = 25 °C OUT IN 50 Ω RL VDD VDS (ON) td(on) td(off) 90 % tr tf 0V 10 % (b) VIN 10 V 90 % (c) VOUT VDD 10 % Precaution Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (0.25 mA for the SSM3K7002BFU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2009-11-26 SSM3K7002BFU ID – VDS 1000 Common Source Ta = 25 °C 10 V 7.0 V 5.0 V 1000 Common Source VDS = 10 V ID – VGS (mA) ID 600 4.5 V ID (mA) 800 100 10 Ta = 100 °C 1 Drain current 400 4.0 V Drain current 25 °C -25 °C 200 3.5 V VGS = 3.3 V 0.1 0 0 0.4 0.8 1.2 1.6 2.0 0.01 0 1.0 2.0 3.0 4.0 5.0 Drain–source voltage VDS (V) Gate–source voltage VGS (V) RDS (ON) – ID 5 Common Source Ta = 25°C 5 RDS (ON) – VGS ID = 100 mA Common Source Ta = 25°C Drain–source ON-resistance RDS (ON) (Ω) 4 Drain–source ON-resistance RDS (ON) (Ω) 4 3 3 2 4.5 V 5.0 V VGS = 10 V 2 Ta = 100 °C 25 °C 1 1 -25 °C 0 10 0 30 100 300 1000 0 10 20 Drain current ID (mA) Gate–source voltage VGS (V) RDS (ON) – Ta 5 Common Source 3.0 Vth – Ta Vth (V) Common Source VDS = 10 V ID = 0.25 mA Drain–source ON-resistance RDS (ON) (Ω) 4 3 100 mA / 4.5 V 2 ID = 500 mA / VGS = 10 V 1 100 mA / 5.0V 0 −50 Gate threshold voltage 2.0 1.0 0 50 100 150 0 −50 0 50 100 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2009-11-26 SSM3K7002BFU (S) 1 |Yfs| – ID (mA) Common Source VDS = 10 V Ta = 25°C IDR – VDS 1000 Common Source VGS = 0 V Ta = 25°C D G 600 S IDR ⎪Yfs⎪ 0.3 800 Forward transfer admittance 0.1 0.03 Drain reverse current IDR 400 200 10 100 1000 0 0 0.01 0.003 0.001 1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Drain current ID (mA) Drain–source voltage VDS (V) 100 C – VDS 1000 tf t – ID Common Source VDD = 30 V VGS = 0 to 10 V Ta = 25 °C (pF) 50 30 td(off) 100 Ciss Capacitance 5 3 Coss Common Source Ta = 25°C f = 1 MHz VGS = 0 V 1 10 Crss Switching time 10 t 10 td(on) tr 100 1 1 10 100 1000 1 0.1 Drain–source voltage VDS (V) (ns) C Drain current ID (mA) PD – Ta 250 Drain power dissipation PD (mW) Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6 mm × 3) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 4 2009-11-26 SSM3K7002BFU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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